Keyphrases
Aluminum Oxide
100%
Atomic Layer Deposited
100%
Silicon Surface Passivation
100%
Ozone Concentration
100%
Hydrogen Concentration
50%
Passivation
50%
Passivation Quality
50%
Interface Defect Density
50%
Ozone Process
50%
Annealing
25%
Atomic Layer Deposition
25%
Surface Passivation
25%
Low Carbon
25%
Hydrogen Content
25%
Surface Recombination Velocity
25%
Charge Density
25%
Single Process
25%
Crystalline Silicon
25%
Effective Oxide Charge
25%
Concentration Results
25%
Carbon Concentration
25%
Lower-optimal
25%
INIS
layers
100%
surfaces
100%
silicon
100%
concentration
100%
ozone
100%
passivation
100%
interfaces
44%
hydrogen
33%
density
22%
water
22%
carbon
22%
defects
22%
oxides
11%
annealing
11%
deposition
11%
films
11%
velocity
11%
recombination
11%
charge density
11%
Material Science
Al2O3
100%
Surface Passivation
100%
Defect Density
100%
Silicon
100%
Film
50%
Density
50%
Surface (Surface Science)
50%
Oxide Compound
50%
Engineering
Passivation
100%
Atomic Layer
100%
Silicon Surface
100%
Defect Density
40%
Process Result
20%
Carbon Concentration
20%
Surface Recombination Velocity
20%
Crystalline Silicon
20%
Atomic Layer Deposition
20%
Charge Density
20%
Chemical Engineering
Atomic Layer Deposition
100%
Film
100%