Keyphrases
Aluminum Oxide
100%
Annealing
25%
Atomic Layer Deposited
100%
Atomic Layer Deposition
25%
Carbon Concentration
25%
Charge Density
25%
Concentration Results
25%
Crystalline Silicon
25%
Effective Oxide Charge
25%
Hydrogen Concentration
50%
Hydrogen Content
25%
Interface Defect Density
50%
Low Carbon
25%
Lower-optimal
25%
Ozone Concentration
100%
Ozone Process
50%
Passivation
50%
Passivation Quality
50%
Silicon Surface Passivation
100%
Single Process
25%
Surface Passivation
25%
Surface Recombination Velocity
25%
INIS
annealing
11%
carbon
22%
charge density
11%
concentration
100%
defects
22%
density
22%
deposition
11%
films
11%
hydrogen
33%
interfaces
44%
layers
100%
oxides
11%
ozone
100%
passivation
100%
recombination
11%
silicon
100%
surfaces
100%
velocity
11%
water
22%
Material Science
Al2O3
100%
Defect Density
100%
Density
50%
Film
50%
Oxide Compound
50%
Silicon
100%
Surface (Surface Science)
50%
Surface Passivation
100%
Engineering
Atomic Layer
100%
Atomic Layer Deposition
20%
Carbon Concentration
20%
Charge Density
20%
Crystalline Silicon
20%
Defect Density
40%
Passivation
100%
Process Result
20%
Silicon Surface
100%
Surface Recombination Velocity
20%
Chemical Engineering
Atomic Layer Deposition
100%
Film
100%