Effect of parasitic capacitance on DC squid performance

Tapani Ryhänen, Robin Cantor, Dietmar Drung, Hans Koch, Heikki Seppä

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)

    Abstract

    The effect of parasitic capacitance Cp on DC SQUID characteristics and noise performance has been studied using a test structure consisting of 11 identical SQUID washers with Nb films of various widths covering the slit. The measured I-V characteristics are in good agreement with simulations based on a simple lumped circuit model. The energy resolution ε in seems to scale roughly according to in approximately ε ≈ γkBT √L(C+2Cp), where γ is a dimensionless constant, kB is the Boltzmann constant, T is the temperature, C is the junction capacitance, and L is the inductance.
    Original languageEnglish
    Pages (from-to)3013 - 3016
    Number of pages4
    JournalIEEE Transactions on Magnetics
    Volume27
    Issue number2
    DOIs
    Publication statusPublished - 1991
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    SQUIDs
    Capacitance
    Washers
    Theophylline
    Inductance
    Networks (circuits)
    Temperature

    Cite this

    Ryhänen, Tapani ; Cantor, Robin ; Drung, Dietmar ; Koch, Hans ; Seppä, Heikki. / Effect of parasitic capacitance on DC squid performance. In: IEEE Transactions on Magnetics. 1991 ; Vol. 27, No. 2. pp. 3013 - 3016.
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    title = "Effect of parasitic capacitance on DC squid performance",
    abstract = "The effect of parasitic capacitance Cp on DC SQUID characteristics and noise performance has been studied using a test structure consisting of 11 identical SQUID washers with Nb films of various widths covering the slit. The measured I-V characteristics are in good agreement with simulations based on a simple lumped circuit model. The energy resolution ε in seems to scale roughly according to in approximately ε ≈ γkBT √L(C+2Cp), where γ is a dimensionless constant, kB is the Boltzmann constant, T is the temperature, C is the junction capacitance, and L is the inductance.",
    author = "Tapani Ryh{\"a}nen and Robin Cantor and Dietmar Drung and Hans Koch and Heikki Sepp{\"a}",
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    Ryhänen, T, Cantor, R, Drung, D, Koch, H & Seppä, H 1991, 'Effect of parasitic capacitance on DC squid performance', IEEE Transactions on Magnetics, vol. 27, no. 2, pp. 3013 - 3016. https://doi.org/10.1109/20.133844

    Effect of parasitic capacitance on DC squid performance. / Ryhänen, Tapani; Cantor, Robin; Drung, Dietmar; Koch, Hans; Seppä, Heikki.

    In: IEEE Transactions on Magnetics, Vol. 27, No. 2, 1991, p. 3013 - 3016.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Effect of parasitic capacitance on DC squid performance

    AU - Ryhänen, Tapani

    AU - Cantor, Robin

    AU - Drung, Dietmar

    AU - Koch, Hans

    AU - Seppä, Heikki

    N1 - Project code: SÄH1201

    PY - 1991

    Y1 - 1991

    N2 - The effect of parasitic capacitance Cp on DC SQUID characteristics and noise performance has been studied using a test structure consisting of 11 identical SQUID washers with Nb films of various widths covering the slit. The measured I-V characteristics are in good agreement with simulations based on a simple lumped circuit model. The energy resolution ε in seems to scale roughly according to in approximately ε ≈ γkBT √L(C+2Cp), where γ is a dimensionless constant, kB is the Boltzmann constant, T is the temperature, C is the junction capacitance, and L is the inductance.

    AB - The effect of parasitic capacitance Cp on DC SQUID characteristics and noise performance has been studied using a test structure consisting of 11 identical SQUID washers with Nb films of various widths covering the slit. The measured I-V characteristics are in good agreement with simulations based on a simple lumped circuit model. The energy resolution ε in seems to scale roughly according to in approximately ε ≈ γkBT √L(C+2Cp), where γ is a dimensionless constant, kB is the Boltzmann constant, T is the temperature, C is the junction capacitance, and L is the inductance.

    U2 - 10.1109/20.133844

    DO - 10.1109/20.133844

    M3 - Article

    VL - 27

    SP - 3013

    EP - 3016

    JO - IEEE Transactions on Magnetics

    JF - IEEE Transactions on Magnetics

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