Effect of partial ionization and the characteristics of lateral power diamond MESFETs

Kaj Grahn; Pekka Kuivalainen; Simo Eränen

doi:10.1088/0031-8949/1994/T54/036

Effect of partial ionization and the characteristics of lateral power diamond MESFETs

Kaj Grahn (Corresponding Author), Pekka Kuivalainen, Simo Eränen

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.

Original language	English
Pages (from-to)	151-153
Number of pages	3
Journal	Physica Scripta
Volume	T54
DOIs	https://doi.org/10.1088/0031-8949/1994/T54/036
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed

Access to Document

10.1088/0031-8949/1994/T54/036

Fingerprint Dive into the research topics of 'Effect of partial ionization and the characteristics of lateral power diamond MESFETs'. Together they form a unique fingerprint.

Cite this

Grahn, K., Kuivalainen, P., & Eränen, S. (1994). Effect of partial ionization and the characteristics of lateral power diamond MESFETs. Physica Scripta, T54, 151-153. https://doi.org/10.1088/0031-8949/1994/T54/036

@article{1cc729a1e3b3405cb671a17bf256b172,

title = "Effect of partial ionization and the characteristics of lateral power diamond MESFETs",

abstract = "Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.",

author = "Kaj Grahn and Pekka Kuivalainen and Simo Er{\"a}nen",

note = "Project code: ELE41061",

year = "1994",

doi = "10.1088/0031-8949/1994/T54/036",

language = "English",

volume = "T54",

pages = "151--153",

journal = "Physica Scripta",

issn = "0031-8949",

publisher = "Institute of Physics IOP",

}

TY - JOUR

T1 - Effect of partial ionization and the characteristics of lateral power diamond MESFETs

AU - Grahn, Kaj

AU - Kuivalainen, Pekka

AU - Eränen, Simo

N1 - Project code: ELE41061

PY - 1994

Y1 - 1994

N2 - Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.

AB - Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.

U2 - 10.1088/0031-8949/1994/T54/036

DO - 10.1088/0031-8949/1994/T54/036

M3 - Article

VL - T54

SP - 151

EP - 153

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

ER -