Effect of partial ionization and the characteristics of lateral power diamond MESFETs

Kaj Grahn (Corresponding Author), Pekka Kuivalainen, Simo Eränen

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.
Original languageEnglish
Pages (from-to)151-153
Number of pages3
JournalPhysica Scripta
VolumeT54
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

Fingerprint

Ionization
Strombus or kite or diamond
Lateral
field effect transistors
diamonds
Partial
ionization
Silicon
MOSFET
Semiconductor Devices
silicon
semiconductor devices
electrical faults
simulators
Breakdown
Simulator
Vertical
Voltage

Cite this

Grahn, Kaj ; Kuivalainen, Pekka ; Eränen, Simo. / Effect of partial ionization and the characteristics of lateral power diamond MESFETs. In: Physica Scripta. 1994 ; Vol. T54. pp. 151-153.
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title = "Effect of partial ionization and the characteristics of lateral power diamond MESFETs",
abstract = "Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.",
author = "Kaj Grahn and Pekka Kuivalainen and Simo Er{\"a}nen",
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year = "1994",
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Effect of partial ionization and the characteristics of lateral power diamond MESFETs. / Grahn, Kaj (Corresponding Author); Kuivalainen, Pekka; Eränen, Simo.

In: Physica Scripta, Vol. T54, 1994, p. 151-153.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of partial ionization and the characteristics of lateral power diamond MESFETs

AU - Grahn, Kaj

AU - Kuivalainen, Pekka

AU - Eränen, Simo

N1 - Project code: ELE41061

PY - 1994

Y1 - 1994

N2 - Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.

AB - Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.

U2 - 10.1088/0031-8949/1994/T54/036

DO - 10.1088/0031-8949/1994/T54/036

M3 - Article

VL - T54

SP - 151

EP - 153

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

ER -