Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.
Grahn, K., Kuivalainen, P., & Eränen, S. (1994). Effect of partial ionization and the characteristics of lateral power diamond MESFETs. Physica Scripta, T54, 151-153. https://doi.org/10.1088/0031-8949/1994/T54/036