Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 151-153 |
| Number of pages | 3 |
| Journal | Physica Scripta |
| Volume | T54 |
| DOIs | |
| Publication status | Published - 1994 |
| MoE publication type | A1 Journal article-refereed |
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Effect of partial ionization and the characteristics of lateral power diamond MESFETs. / Grahn, Kaj (Corresponding Author); Kuivalainen, Pekka; Eränen, Simo.
In: Physica Scripta, Vol. T54, 1994, p. 151-153.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Effect of partial ionization and the characteristics of lateral power diamond MESFETs
AU - Grahn, Kaj
AU - Kuivalainen, Pekka
AU - Eränen, Simo
N1 - Project code: ELE41061
PY - 1994
Y1 - 1994
N2 - Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.
AB - Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.
U2 - 10.1088/0031-8949/1994/T54/036
DO - 10.1088/0031-8949/1994/T54/036
M3 - Article
VL - T54
SP - 151
EP - 153
JO - Physica Scripta
JF - Physica Scripta
SN - 0031-8949
ER -