Effect of partial ionization and the characteristics of lateral power diamond MESFETs

Kaj Grahn (Corresponding Author), Pekka Kuivalainen, Simo Eränen

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.
Original languageEnglish
Pages (from-to)151-153
Number of pages3
JournalPhysica Scripta
VolumeT54
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

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