@inproceedings{c8e2cbaf53ad4624a237b841191e1268,
title = "Effect of partial ionization and the characteristics of lateral power diamond MESFETs",
abstract = "Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.",
author = "Kaj Grahn and Pekka Kuivalainen and Simo Er{\"a}nen",
note = "Project code: KOT10104; 16th Nordic Semiconductor Meeting ; Conference date: 12-06-1994 Through 15-06-1994",
year = "1994",
doi = "10.1088/0031-8949/1994/T54/036",
language = "English",
isbn = "978-91-8730-821-5",
series = "Physica Scripta T",
publisher = "Royal Swedish Academy of Sciences",
pages = "151--153",
editor = "G{\'i}slason, {Hafli{\dh}i P{\'e}tur} and Vi{\dh}ar Gu{\dh}mundsson",
booktitle = "Proceedings of the 16th Nordic Semiconductor Meeting",
address = "Sweden",
}