Effect of partial ionization and the characteristics of lateral power diamond MESFETs

Kaj Grahn, Pekka Kuivalainen, Simo Eränen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

Power device structures, which could be implemented by using diamond technology of today, have been analyzed with the aid of a two-dimensional numerical simulator code for semiconductor devices. It has been found that partial ionization of deep acceptor states substantially degrades the electrical performance of 1000 V lateral diamond power MESFETs. No advantage over corresponding silicon devices can be obtained. If the partial ionization phenomenon can be eliminated, the on-resistance of the diamond MESFET is almost two orders of magnitude smaller than in vertical silicon power MOSFETs having the same breakdown voltage.
Original languageEnglish
Title of host publicationProceedings of the 16th Nordic Semiconductor Meeting
EditorsHafliði Pétur Gíslason, Viðar Guðmundsson
Place of PublicationStockholm
PublisherRoyal Swedish Academy of Sciences
Pages151-153
ISBN (Print)978-91-8730-821-5
DOIs
Publication statusPublished - 1994
MoE publication typeA4 Article in a conference publication
Event16th Nordic Semiconductor Meeting - Laugarvatn, Iceland
Duration: 12 Jun 199415 Jun 1994

Publication series

SeriesPhysica Scripta T
VolumeT54
ISSN0281-1847

Conference

Conference16th Nordic Semiconductor Meeting
CountryIceland
CityLaugarvatn
Period12/06/9415/06/94

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