Effect of preamorphization depth on channeling tails in B+ and As+ implanted silicon

Ilkka Suni; Hannu Ronkainen; Simo Eränen; Timo Murto; Christos Krontiras; Manuela Finetti

doi:10.1557/PROC-45-39

Effect of preamorphization depth on channeling tails in B⁺ and As⁺ implanted silicon

Ilkka Suni, Hannu Ronkainen, Simo Eränen, Timo Murto, Christos Krontiras, Manuela Finetti

National Research Council (CNR)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We have studied the effects of ion-channeling in B⁺ and As⁺ implanted Si which has been preamorphized to different depths by 28 Si⁺ irradiation at 60 keV and 180 keV. It is shown that the junctions for incompletely amorphized substrates are only slightly deeper than predicted by LSS theory. For preamorphized layers extending beyofnd-the predicted junction depths the implantations of 25 keV B⁺ and 120 keV ⁷⁵As⁺ with a dose of 5-10¹⁵ cm^-2 yield junction depths in the order of 2200-2300 Å after furnace annealing at 700°C for 30 minutes.

Original language	English
Title of host publication	Ion Beam Processes in Advanced Electronic Materials and Device Technology
Editors	B.R. Appleton, F.H. Eisen, T.W. Sigmon
DOIs	https://doi.org/10.1557/PROC-45-39
Publication status	Published - 1985
MoE publication type	A4 Article in a conference publication

Publication series

Series	Materials Research Society Symposia Proceedings
Volume	45
ISSN	0272-9172

Access to Document

10.1557/PROC-45-39

Cite this

@inproceedings{602e928e901c4e9a8b30b6433315d27f,

title = "Effect of preamorphization depth on channeling tails in B+ and As+ implanted silicon",

abstract = "We have studied the effects of ion-channeling in B+ and As+ implanted Si which has been preamorphized to different depths by 28 Si+ irradiation at 60 keV and 180 keV. It is shown that the junctions for incompletely amorphized substrates are only slightly deeper than predicted by LSS theory. For preamorphized layers extending beyofnd-the predicted junction depths the implantations of 25 keV B+ and 120 keV 75As+ with a dose of 5-1015 cm-2 yield junction depths in the order of 2200-2300 {\AA} after furnace annealing at 700°C for 30 minutes.",

author = "Ilkka Suni and Hannu Ronkainen and Simo Er{\"a}nen and Timo Murto and Christos Krontiras and Manuela Finetti",

year = "1985",

doi = "10.1557/PROC-45-39",

language = "English",

series = "Materials Research Society Symposia Proceedings",

publisher = "Cambridge University Press",

editor = "B.R. Appleton and F.H. Eisen and T.W. Sigmon",

booktitle = "Ion Beam Processes in Advanced Electronic Materials and Device Technology",

}

Suni, I, Ronkainen, H, Eränen, S, Murto, T, Krontiras, C & Finetti, M 1985, Effect of preamorphization depth on channeling tails in B⁺ and As⁺ implanted silicon. in BR Appleton, FH Eisen & TW Sigmon (eds), Ion Beam Processes in Advanced Electronic Materials and Device Technology., 39, Materials Research Society Symposia Proceedings, vol. 45. https://doi.org/10.1557/PROC-45-39

Effect of preamorphization depth on channeling tails in B⁺ and As⁺ implanted silicon. / Suni, Ilkka; Ronkainen, Hannu; Eränen, Simo et al.
Ion Beam Processes in Advanced Electronic Materials and Device Technology. ed. / B.R. Appleton; F.H. Eisen; T.W. Sigmon. 1985. 39 (Materials Research Society Symposia Proceedings, Vol. 45).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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T1 - Effect of preamorphization depth on channeling tails in B+ and As+ implanted silicon

AU - Suni, Ilkka

AU - Ronkainen, Hannu

AU - Eränen, Simo

AU - Murto, Timo

AU - Krontiras, Christos

AU - Finetti, Manuela

PY - 1985

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N2 - We have studied the effects of ion-channeling in B+ and As+ implanted Si which has been preamorphized to different depths by 28 Si+ irradiation at 60 keV and 180 keV. It is shown that the junctions for incompletely amorphized substrates are only slightly deeper than predicted by LSS theory. For preamorphized layers extending beyofnd-the predicted junction depths the implantations of 25 keV B+ and 120 keV 75As+ with a dose of 5-1015 cm-2 yield junction depths in the order of 2200-2300 Å after furnace annealing at 700°C for 30 minutes.

AB - We have studied the effects of ion-channeling in B+ and As+ implanted Si which has been preamorphized to different depths by 28 Si+ irradiation at 60 keV and 180 keV. It is shown that the junctions for incompletely amorphized substrates are only slightly deeper than predicted by LSS theory. For preamorphized layers extending beyofnd-the predicted junction depths the implantations of 25 keV B+ and 120 keV 75As+ with a dose of 5-1015 cm-2 yield junction depths in the order of 2200-2300 Å after furnace annealing at 700°C for 30 minutes.

U2 - 10.1557/PROC-45-39

DO - 10.1557/PROC-45-39

M3 - Conference article in proceedings

T3 - Materials Research Society Symposia Proceedings

BT - Ion Beam Processes in Advanced Electronic Materials and Device Technology

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A2 - Eisen, F.H.

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