Effect of preamorphization depth on channeling tails in B+ and As+ implanted silicon

Ilkka Suni, Hannu Ronkainen, Simo Eränen, Timo Murto, Christos Krontiras, Manuela Finetti

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    We have studied the effects of ion-channeling in B+ and As+ implanted Si which has been preamorphized to different depths by 28 Si+ irradiation at 60 keV and 180 keV. It is shown that the junctions for incompletely amorphized substrates are only slightly deeper than predicted by LSS theory. For preamorphized layers extending beyofnd-the predicted junction depths the implantations of 25 keV B+ and 120 keV 75As+ with a dose of 5-1015 cm-2 yield junction depths in the order of 2200-2300 Å after furnace annealing at 700°C for 30 minutes.
    Original languageEnglish
    Title of host publicationIon Beam Processes in Advanced Electronic Materials and Device Technology
    EditorsB.R. Appleton, F.H. Eisen, T.W. Sigmon
    DOIs
    Publication statusPublished - 1985
    MoE publication typeA4 Article in a conference publication

    Publication series

    SeriesMaterials Research Society Symposia Proceedings
    Volume45
    ISSN0272-9172

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  • Cite this

    Suni, I., Ronkainen, H., Eränen, S., Murto, T., Krontiras, C., & Finetti, M. (1985). Effect of preamorphization depth on channeling tails in B+ and As+ implanted silicon. In B. R. Appleton, F. H. Eisen, & T. W. Sigmon (Eds.), Ion Beam Processes in Advanced Electronic Materials and Device Technology [39] Materials Research Society Symposia Proceedings, Vol.. 45 https://doi.org/10.1557/PROC-45-39