We have studied the effects of ion-channeling in B+ and As+ implanted Si which has been preamorphized to different depths by 28 Si+ irradiation at 60 keV and 180 keV. It is shown that the junctions for incompletely amorphized substrates are only slightly deeper than predicted by LSS theory. For preamorphized layers extending beyofnd-the predicted junction depths the implantations of 25 keV B+ and 120 keV 75As+ with a dose of 5-1015 cm-2 yield junction depths in the order of 2200-2300 Å after furnace annealing at 700°C for 30 minutes.
|Title of host publication||Ion Beam Processes in Advanced Electronic Materials and Device Technology|
|Editors||B.R. Appleton, F.H. Eisen, T.W. Sigmon|
|Publication status||Published - 1985|
|MoE publication type||A4 Article in a conference publication|
|Series||Materials Research Society Symposia Proceedings|
Suni, I., Ronkainen, H., Eränen, S., Murto, T., Krontiras, C., & Finetti, M. (1985). Effect of preamorphization depth on channeling tails in B+ and As+ implanted silicon. In B. R. Appleton, F. H. Eisen, & T. W. Sigmon (Eds.), Ion Beam Processes in Advanced Electronic Materials and Device Technology  Materials Research Society Symposia Proceedings, Vol.. 45 https://doi.org/10.1557/PROC-45-39