Effect of Shot Number on Femtosecond Laser Drilling of Silicon

Petri Laakso, Raimo Penttilä, Päivi Heimala

    Research output: Contribution to journalArticleScientificpeer-review

    10 Citations (Scopus)

    Abstract

    Silicon wafer drilling has been under heavy investigation for some time already. Several different laser types and methods have been introduced to different applications. In the industry usually the nanosecond lasers are used. Femtosecond lasers have been considered as high cost and not suitable for the industrial production. At present femtosecond lasers offer really high pulse energies and good reliability, and also high repetition rates and relatively high pulse energies are possible in the sub picosecond range. Processing accuracy with femtosecond laser is very good and heat input is negligible in the processed surface. In this paper we demonstrate the effect of the number of pulses in silicon wafer drilling with a femtosecond laser in free air. Silicon wafers used were p–type, [100] oriented and double-side polished. From the experiments we can see that the drilled hole depth increases rapidly until a turning point is reached, and the ablation rate becomes much smaller. The transition occurs at around several hundreds to 1000 shots.
    Original languageEnglish
    Pages (from-to)273-276
    Number of pages4
    JournalJournal of Laser Micro Nanoengineering
    Volume5
    Issue number3
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    laser drilling
    Ultrashort pulses
    shot
    Drilling
    Silicon wafers
    Silicon
    silicon
    lasers
    Laser pulses
    wafers
    drilling
    Lasers
    Ablation
    pulses
    ablation
    repetition
    Processing
    Air
    industries
    costs

    Keywords

    • Femtosecond
    • laser
    • drilling
    • silicon
    • t-type

    Cite this

    @article{c0d33e4d0a094bcebd4e3ebc455814a5,
    title = "Effect of Shot Number on Femtosecond Laser Drilling of Silicon",
    abstract = "Silicon wafer drilling has been under heavy investigation for some time already. Several different laser types and methods have been introduced to different applications. In the industry usually the nanosecond lasers are used. Femtosecond lasers have been considered as high cost and not suitable for the industrial production. At present femtosecond lasers offer really high pulse energies and good reliability, and also high repetition rates and relatively high pulse energies are possible in the sub picosecond range. Processing accuracy with femtosecond laser is very good and heat input is negligible in the processed surface. In this paper we demonstrate the effect of the number of pulses in silicon wafer drilling with a femtosecond laser in free air. Silicon wafers used were p–type, [100] oriented and double-side polished. From the experiments we can see that the drilled hole depth increases rapidly until a turning point is reached, and the ablation rate becomes much smaller. The transition occurs at around several hundreds to 1000 shots.",
    keywords = "Femtosecond, laser, drilling, silicon, t-type",
    author = "Petri Laakso and Raimo Penttil{\"a} and P{\"a}ivi Heimala",
    note = "Project code: 26206",
    year = "2010",
    doi = "10.2961/jlmn.2010.03.0017",
    language = "English",
    volume = "5",
    pages = "273--276",
    journal = "Journal of Laser Micro Nanoengineering",
    issn = "1880-0688",
    publisher = "Japan Laser Processing",
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    }

    Effect of Shot Number on Femtosecond Laser Drilling of Silicon. / Laakso, Petri; Penttilä, Raimo; Heimala, Päivi.

    In: Journal of Laser Micro Nanoengineering, Vol. 5, No. 3, 2010, p. 273-276.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Effect of Shot Number on Femtosecond Laser Drilling of Silicon

    AU - Laakso, Petri

    AU - Penttilä, Raimo

    AU - Heimala, Päivi

    N1 - Project code: 26206

    PY - 2010

    Y1 - 2010

    N2 - Silicon wafer drilling has been under heavy investigation for some time already. Several different laser types and methods have been introduced to different applications. In the industry usually the nanosecond lasers are used. Femtosecond lasers have been considered as high cost and not suitable for the industrial production. At present femtosecond lasers offer really high pulse energies and good reliability, and also high repetition rates and relatively high pulse energies are possible in the sub picosecond range. Processing accuracy with femtosecond laser is very good and heat input is negligible in the processed surface. In this paper we demonstrate the effect of the number of pulses in silicon wafer drilling with a femtosecond laser in free air. Silicon wafers used were p–type, [100] oriented and double-side polished. From the experiments we can see that the drilled hole depth increases rapidly until a turning point is reached, and the ablation rate becomes much smaller. The transition occurs at around several hundreds to 1000 shots.

    AB - Silicon wafer drilling has been under heavy investigation for some time already. Several different laser types and methods have been introduced to different applications. In the industry usually the nanosecond lasers are used. Femtosecond lasers have been considered as high cost and not suitable for the industrial production. At present femtosecond lasers offer really high pulse energies and good reliability, and also high repetition rates and relatively high pulse energies are possible in the sub picosecond range. Processing accuracy with femtosecond laser is very good and heat input is negligible in the processed surface. In this paper we demonstrate the effect of the number of pulses in silicon wafer drilling with a femtosecond laser in free air. Silicon wafers used were p–type, [100] oriented and double-side polished. From the experiments we can see that the drilled hole depth increases rapidly until a turning point is reached, and the ablation rate becomes much smaller. The transition occurs at around several hundreds to 1000 shots.

    KW - Femtosecond

    KW - laser

    KW - drilling

    KW - silicon

    KW - t-type

    U2 - 10.2961/jlmn.2010.03.0017

    DO - 10.2961/jlmn.2010.03.0017

    M3 - Article

    VL - 5

    SP - 273

    EP - 276

    JO - Journal of Laser Micro Nanoengineering

    JF - Journal of Laser Micro Nanoengineering

    SN - 1880-0688

    IS - 3

    ER -