Effect of Shot Number on Femtosecond Laser Drilling of Silicon

Petri Laakso, Raimo Penttilä, Päivi Heimala

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

Silicon wafer drilling has been under heavy investigation for some time already. Several different laser types and methods have been introduced to different applications. In the industry usually the nanosecond lasers are used. Femtosecond lasers have been considered as high cost and not suitable for the industrial production. At present femtosecond lasers offer really high pulse energies and good reliability, and also high repetition rates and relatively high pulse energies are possible in the sub picosecond range. Processing accuracy with femtosecond laser is very good and heat input is negligible in the processed surface. In this paper we demonstrate the effect of the number of pulses in silicon wafer drilling with a femtosecond laser in free air. Silicon wafers used were p–type, [100] oriented and double-side polished. From the experiments we can see that the drilled hole depth increases rapidly until a turning point is reached, and the ablation rate becomes much smaller. The transition occurs at around several hundreds to 1000 shots.
Original languageEnglish
Pages (from-to)273-276
Number of pages4
JournalJournal of Laser Micro Nanoengineering
Volume5
Issue number3
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Fingerprint

laser drilling
Ultrashort pulses
shot
Drilling
Silicon wafers
Silicon
silicon
lasers
Laser pulses
wafers
drilling
Lasers
Ablation
pulses
ablation
repetition
Processing
Air
industries
costs

Keywords

  • Femtosecond
  • laser
  • drilling
  • silicon
  • t-type

Cite this

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title = "Effect of Shot Number on Femtosecond Laser Drilling of Silicon",
abstract = "Silicon wafer drilling has been under heavy investigation for some time already. Several different laser types and methods have been introduced to different applications. In the industry usually the nanosecond lasers are used. Femtosecond lasers have been considered as high cost and not suitable for the industrial production. At present femtosecond lasers offer really high pulse energies and good reliability, and also high repetition rates and relatively high pulse energies are possible in the sub picosecond range. Processing accuracy with femtosecond laser is very good and heat input is negligible in the processed surface. In this paper we demonstrate the effect of the number of pulses in silicon wafer drilling with a femtosecond laser in free air. Silicon wafers used were p–type, [100] oriented and double-side polished. From the experiments we can see that the drilled hole depth increases rapidly until a turning point is reached, and the ablation rate becomes much smaller. The transition occurs at around several hundreds to 1000 shots.",
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author = "Petri Laakso and Raimo Penttil{\"a} and P{\"a}ivi Heimala",
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Effect of Shot Number on Femtosecond Laser Drilling of Silicon. / Laakso, Petri; Penttilä, Raimo; Heimala, Päivi.

In: Journal of Laser Micro Nanoengineering, Vol. 5, No. 3, 2010, p. 273-276.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of Shot Number on Femtosecond Laser Drilling of Silicon

AU - Laakso, Petri

AU - Penttilä, Raimo

AU - Heimala, Päivi

N1 - Project code: 26206

PY - 2010

Y1 - 2010

N2 - Silicon wafer drilling has been under heavy investigation for some time already. Several different laser types and methods have been introduced to different applications. In the industry usually the nanosecond lasers are used. Femtosecond lasers have been considered as high cost and not suitable for the industrial production. At present femtosecond lasers offer really high pulse energies and good reliability, and also high repetition rates and relatively high pulse energies are possible in the sub picosecond range. Processing accuracy with femtosecond laser is very good and heat input is negligible in the processed surface. In this paper we demonstrate the effect of the number of pulses in silicon wafer drilling with a femtosecond laser in free air. Silicon wafers used were p–type, [100] oriented and double-side polished. From the experiments we can see that the drilled hole depth increases rapidly until a turning point is reached, and the ablation rate becomes much smaller. The transition occurs at around several hundreds to 1000 shots.

AB - Silicon wafer drilling has been under heavy investigation for some time already. Several different laser types and methods have been introduced to different applications. In the industry usually the nanosecond lasers are used. Femtosecond lasers have been considered as high cost and not suitable for the industrial production. At present femtosecond lasers offer really high pulse energies and good reliability, and also high repetition rates and relatively high pulse energies are possible in the sub picosecond range. Processing accuracy with femtosecond laser is very good and heat input is negligible in the processed surface. In this paper we demonstrate the effect of the number of pulses in silicon wafer drilling with a femtosecond laser in free air. Silicon wafers used were p–type, [100] oriented and double-side polished. From the experiments we can see that the drilled hole depth increases rapidly until a turning point is reached, and the ablation rate becomes much smaller. The transition occurs at around several hundreds to 1000 shots.

KW - Femtosecond

KW - laser

KW - drilling

KW - silicon

KW - t-type

U2 - 10.2961/jlmn.2010.03.0017

DO - 10.2961/jlmn.2010.03.0017

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JO - Journal of Laser Micro Nanoengineering

JF - Journal of Laser Micro Nanoengineering

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ER -