Effect of strain and grain boundaries on dielectric properties in La 0.7Sr0.3MnO3 thin films

S. Majumdar, H. Huhtinen, P. Paturi, H. S. Majumdar

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

High dielectric constant and its dependence on structural strain and grain boundaries (GB) in La0.7Sr0.3MnO3 (LSMO) thin films are reported. X-ray diffraction, magnetization, and magneto-transport measurements of the LSMO films, made by pulsed laser deposition on two different substrates—MgO and SrTiO3 (STO), were compared to co-relate magnetic properties with dielectric properties. At room temperature, in the ferromagnetic phase of LSMO, a high dielectric constant (6 × 104) was observed up to 100 kHz frequency for the films on MgO, with polycrystalline properties and more high-angle GB related defects, while for the films on STO, with single-crystalline properties but strained unit cells, high dielectric constant (≈104) was observed until 1 MHz frequency. Also, a large dielectric relaxation time with significant broadening from the Debye single-dielectric relaxation model has been observed in samples with higher GB defects. Impedance spectroscopy further shows that large dielectric constant of the single-crystalline, strained LSMO film is intrinsic in nature while that in the polycrystalline films are mainly extrinsic due to higher amount of GBs. The presence of high dielectric constant value until high frequency range rules out the possibility of “apparent giant dielectric constant” arising from the sample-electrode interface. Coexistence of ferromagnetism and high dielectric constant can be very useful for different microelectronic applications.
Original languageEnglish
Pages (from-to)2115-2122
Number of pages7
JournalJournal of Materials Science
Volume48
Issue number5
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

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Dielectric properties
Grain boundaries
Permittivity
Thin films
Dielectric relaxation
Crystalline materials
Defects
Ferromagnetism
Pulsed laser deposition
Microelectronics
Relaxation time
Magnetization
Magnetic properties
Spectroscopy
X ray diffraction
Electrodes

Cite this

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title = "Effect of strain and grain boundaries on dielectric properties in La 0.7Sr0.3MnO3 thin films",
abstract = "High dielectric constant and its dependence on structural strain and grain boundaries (GB) in La0.7Sr0.3MnO3 (LSMO) thin films are reported. X-ray diffraction, magnetization, and magneto-transport measurements of the LSMO films, made by pulsed laser deposition on two different substrates—MgO and SrTiO3 (STO), were compared to co-relate magnetic properties with dielectric properties. At room temperature, in the ferromagnetic phase of LSMO, a high dielectric constant (6 × 104) was observed up to 100 kHz frequency for the films on MgO, with polycrystalline properties and more high-angle GB related defects, while for the films on STO, with single-crystalline properties but strained unit cells, high dielectric constant (≈104) was observed until 1 MHz frequency. Also, a large dielectric relaxation time with significant broadening from the Debye single-dielectric relaxation model has been observed in samples with higher GB defects. Impedance spectroscopy further shows that large dielectric constant of the single-crystalline, strained LSMO film is intrinsic in nature while that in the polycrystalline films are mainly extrinsic due to higher amount of GBs. The presence of high dielectric constant value until high frequency range rules out the possibility of “apparent giant dielectric constant” arising from the sample-electrode interface. Coexistence of ferromagnetism and high dielectric constant can be very useful for different microelectronic applications.",
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Effect of strain and grain boundaries on dielectric properties in La 0.7Sr0.3MnO3 thin films. / Majumdar, S.; Huhtinen, H.; Paturi, P.; Majumdar, H. S.

In: Journal of Materials Science, Vol. 48, No. 5, 2013, p. 2115-2122.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of strain and grain boundaries on dielectric properties in La 0.7Sr0.3MnO3 thin films

AU - Majumdar, S.

AU - Huhtinen, H.

AU - Paturi, P.

AU - Majumdar, H. S.

PY - 2013

Y1 - 2013

N2 - High dielectric constant and its dependence on structural strain and grain boundaries (GB) in La0.7Sr0.3MnO3 (LSMO) thin films are reported. X-ray diffraction, magnetization, and magneto-transport measurements of the LSMO films, made by pulsed laser deposition on two different substrates—MgO and SrTiO3 (STO), were compared to co-relate magnetic properties with dielectric properties. At room temperature, in the ferromagnetic phase of LSMO, a high dielectric constant (6 × 104) was observed up to 100 kHz frequency for the films on MgO, with polycrystalline properties and more high-angle GB related defects, while for the films on STO, with single-crystalline properties but strained unit cells, high dielectric constant (≈104) was observed until 1 MHz frequency. Also, a large dielectric relaxation time with significant broadening from the Debye single-dielectric relaxation model has been observed in samples with higher GB defects. Impedance spectroscopy further shows that large dielectric constant of the single-crystalline, strained LSMO film is intrinsic in nature while that in the polycrystalline films are mainly extrinsic due to higher amount of GBs. The presence of high dielectric constant value until high frequency range rules out the possibility of “apparent giant dielectric constant” arising from the sample-electrode interface. Coexistence of ferromagnetism and high dielectric constant can be very useful for different microelectronic applications.

AB - High dielectric constant and its dependence on structural strain and grain boundaries (GB) in La0.7Sr0.3MnO3 (LSMO) thin films are reported. X-ray diffraction, magnetization, and magneto-transport measurements of the LSMO films, made by pulsed laser deposition on two different substrates—MgO and SrTiO3 (STO), were compared to co-relate magnetic properties with dielectric properties. At room temperature, in the ferromagnetic phase of LSMO, a high dielectric constant (6 × 104) was observed up to 100 kHz frequency for the films on MgO, with polycrystalline properties and more high-angle GB related defects, while for the films on STO, with single-crystalline properties but strained unit cells, high dielectric constant (≈104) was observed until 1 MHz frequency. Also, a large dielectric relaxation time with significant broadening from the Debye single-dielectric relaxation model has been observed in samples with higher GB defects. Impedance spectroscopy further shows that large dielectric constant of the single-crystalline, strained LSMO film is intrinsic in nature while that in the polycrystalline films are mainly extrinsic due to higher amount of GBs. The presence of high dielectric constant value until high frequency range rules out the possibility of “apparent giant dielectric constant” arising from the sample-electrode interface. Coexistence of ferromagnetism and high dielectric constant can be very useful for different microelectronic applications.

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DO - 10.1007/s10853-012-6986-x

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