Effect of substrate orientation on the catalyst-free growth of InP nanowires

M. Mattila, T. Hakkarainen, Hua Jiang, Esko I. Kauppinen, H. Lipsanen

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35 Citations (Scopus)

Abstract

We report the fabrication of self-catalysed InP nanowires on (111)B, (111)A, (110), and (001) InP substrates. Indium droplets, deposited in situ using metalorganic vapour phase epitaxy, are used as seeds for nanowire growth. The preferential nanowire growth direction is always ⟨111⟩ B on (111)B, (111)A, and (110) oriented substrates. On (111)A substrates some initial growth in the [111]A direction is observed before kinking into one of the available ⟨111⟩B directions. The nanowires are optically active at room temperature. On (001) substrates no nanowire growth off the substrate is observed. However, growth still takes place in the two possible equivalent ⟨111⟩B azimuthal directions.
Original languageEnglish
Article number155301
Number of pages5
JournalNanotechnology
Volume18
Issue number15
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Keywords

  • nanowires
  • fabrication
  • indium
  • metalorganic vapor phase epitaxy

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    Mattila, M., Hakkarainen, T., Jiang, H., Kauppinen, E. I., & Lipsanen, H. (2007). Effect of substrate orientation on the catalyst-free growth of InP nanowires. Nanotechnology, 18(15), [155301]. https://doi.org/10.1088/0957-4484/18/15/155301