Effect of substrate orientation on the catalyst-free growth of InP nanowires

M. Mattila, T. Hakkarainen, Hua Jiang, Esko I. Kauppinen, H. Lipsanen

Research output: Contribution to journalArticleScientificpeer-review

34 Citations (Scopus)

Abstract

We report the fabrication of self-catalysed InP nanowires on (111)B, (111)A, (110), and (001) InP substrates. Indium droplets, deposited in situ using metalorganic vapour phase epitaxy, are used as seeds for nanowire growth. The preferential nanowire growth direction is always ⟨111⟩ B on (111)B, (111)A, and (110) oriented substrates. On (111)A substrates some initial growth in the [111]A direction is observed before kinking into one of the available ⟨111⟩B directions. The nanowires are optically active at room temperature. On (001) substrates no nanowire growth off the substrate is observed. However, growth still takes place in the two possible equivalent ⟨111⟩B azimuthal directions.
Original languageEnglish
Article number155301
Number of pages5
JournalNanotechnology
Volume18
Issue number15
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Fingerprint

Nanowires
Catalysts
Substrates
Indium
Metallorganic vapor phase epitaxy
Seed
Fabrication
Direction compound
Temperature
N-(2-hydroxyethyl)-4-(beta-(1-naphthylvinyl)pyridinium bromide)

Keywords

  • nanowires
  • fabrication
  • indium
  • metalorganic vapor phase epitaxy

Cite this

Mattila, M., Hakkarainen, T., Jiang, H., Kauppinen, E. I., & Lipsanen, H. (2007). Effect of substrate orientation on the catalyst-free growth of InP nanowires. Nanotechnology, 18(15), [155301]. https://doi.org/10.1088/0957-4484/18/15/155301
Mattila, M. ; Hakkarainen, T. ; Jiang, Hua ; Kauppinen, Esko I. ; Lipsanen, H. / Effect of substrate orientation on the catalyst-free growth of InP nanowires. In: Nanotechnology. 2007 ; Vol. 18, No. 15.
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abstract = "We report the fabrication of self-catalysed InP nanowires on (111)B, (111)A, (110), and (001) InP substrates. Indium droplets, deposited in situ using metalorganic vapour phase epitaxy, are used as seeds for nanowire growth. The preferential nanowire growth direction is always ⟨111⟩ B on (111)B, (111)A, and (110) oriented substrates. On (111)A substrates some initial growth in the [111]A direction is observed before kinking into one of the available ⟨111⟩B directions. The nanowires are optically active at room temperature. On (001) substrates no nanowire growth off the substrate is observed. However, growth still takes place in the two possible equivalent ⟨111⟩B azimuthal directions.",
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Mattila, M, Hakkarainen, T, Jiang, H, Kauppinen, EI & Lipsanen, H 2007, 'Effect of substrate orientation on the catalyst-free growth of InP nanowires', Nanotechnology, vol. 18, no. 15, 155301. https://doi.org/10.1088/0957-4484/18/15/155301

Effect of substrate orientation on the catalyst-free growth of InP nanowires. / Mattila, M.; Hakkarainen, T.; Jiang, Hua; Kauppinen, Esko I.; Lipsanen, H.

In: Nanotechnology, Vol. 18, No. 15, 155301, 2007.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of substrate orientation on the catalyst-free growth of InP nanowires

AU - Mattila, M.

AU - Hakkarainen, T.

AU - Jiang, Hua

AU - Kauppinen, Esko I.

AU - Lipsanen, H.

PY - 2007

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AB - We report the fabrication of self-catalysed InP nanowires on (111)B, (111)A, (110), and (001) InP substrates. Indium droplets, deposited in situ using metalorganic vapour phase epitaxy, are used as seeds for nanowire growth. The preferential nanowire growth direction is always ⟨111⟩ B on (111)B, (111)A, and (110) oriented substrates. On (111)A substrates some initial growth in the [111]A direction is observed before kinking into one of the available ⟨111⟩B directions. The nanowires are optically active at room temperature. On (001) substrates no nanowire growth off the substrate is observed. However, growth still takes place in the two possible equivalent ⟨111⟩B azimuthal directions.

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KW - fabrication

KW - indium

KW - metalorganic vapor phase epitaxy

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DO - 10.1088/0957-4484/18/15/155301

M3 - Article

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JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

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