Effect of substrate pretreatments on the atomic layer deposited Al2O3 passivation quality

Y. Bao, S. Li, G. von Gastrow, P. Repo, H. Savin, Matti Putkonen

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    The authors show here that the passivation quality of Al 2O3 is highly sensitive to the surface condition prior to the atomic layer deposition, affecting especially the thermal stability of the film. Pretreatments like diluted HCl bath or preheating at 200°C both improved significantly the passivation quality and thermal stability of the films. In addition, the authors observed that a thin chemical SiO2 layer resulting from diluted HCl solves the blistering problem often encountered in H2O based atomic layer deposited process. Finally, the authors show that the chemical oxide protects the surface from contaminants, enabling long storage times in a dirty ambient between the cleaning and the film deposition.
    Original languageEnglish
    Article number01A123
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume33
    Issue number1
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Passivation
    pretreatment
    passivity
    Thermodynamic stability
    thermal stability
    Substrates
    Atomic layer deposition
    Preheating
    atomic layer epitaxy
    Oxides
    cleaning
    contaminants
    baths
    Cleaning
    Impurities
    heating
    oxides

    Keywords

    • atomic layer deposition
    • ozone
    • surface cleaning
    • surface passivation

    Cite this

    Bao, Y. ; Li, S. ; von Gastrow, G. ; Repo, P. ; Savin, H. ; Putkonen, Matti. / Effect of substrate pretreatments on the atomic layer deposited Al2O3 passivation quality. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2015 ; Vol. 33, No. 1.
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    abstract = "The authors show here that the passivation quality of Al 2O3 is highly sensitive to the surface condition prior to the atomic layer deposition, affecting especially the thermal stability of the film. Pretreatments like diluted HCl bath or preheating at 200°C both improved significantly the passivation quality and thermal stability of the films. In addition, the authors observed that a thin chemical SiO2 layer resulting from diluted HCl solves the blistering problem often encountered in H2O based atomic layer deposited process. Finally, the authors show that the chemical oxide protects the surface from contaminants, enabling long storage times in a dirty ambient between the cleaning and the film deposition.",
    keywords = "atomic layer deposition, ozone, surface cleaning, surface passivation",
    author = "Y. Bao and S. Li and {von Gastrow}, G. and P. Repo and H. Savin and Matti Putkonen",
    year = "2015",
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    Effect of substrate pretreatments on the atomic layer deposited Al2O3 passivation quality. / Bao, Y.; Li, S.; von Gastrow, G.; Repo, P.; Savin, H.; Putkonen, Matti.

    In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 33, No. 1, 01A123, 2015.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Effect of substrate pretreatments on the atomic layer deposited Al2O3 passivation quality

    AU - Bao, Y.

    AU - Li, S.

    AU - von Gastrow, G.

    AU - Repo, P.

    AU - Savin, H.

    AU - Putkonen, Matti

    PY - 2015

    Y1 - 2015

    N2 - The authors show here that the passivation quality of Al 2O3 is highly sensitive to the surface condition prior to the atomic layer deposition, affecting especially the thermal stability of the film. Pretreatments like diluted HCl bath or preheating at 200°C both improved significantly the passivation quality and thermal stability of the films. In addition, the authors observed that a thin chemical SiO2 layer resulting from diluted HCl solves the blistering problem often encountered in H2O based atomic layer deposited process. Finally, the authors show that the chemical oxide protects the surface from contaminants, enabling long storage times in a dirty ambient between the cleaning and the film deposition.

    AB - The authors show here that the passivation quality of Al 2O3 is highly sensitive to the surface condition prior to the atomic layer deposition, affecting especially the thermal stability of the film. Pretreatments like diluted HCl bath or preheating at 200°C both improved significantly the passivation quality and thermal stability of the films. In addition, the authors observed that a thin chemical SiO2 layer resulting from diluted HCl solves the blistering problem often encountered in H2O based atomic layer deposited process. Finally, the authors show that the chemical oxide protects the surface from contaminants, enabling long storage times in a dirty ambient between the cleaning and the film deposition.

    KW - atomic layer deposition

    KW - ozone

    KW - surface cleaning

    KW - surface passivation

    U2 - 10.1116/1.4901456

    DO - 10.1116/1.4901456

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    JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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