Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films

Terho Kololuoma; Leena-Sisko Johansson; Arto Maaninen; Joseph M. Campbell; Juha T. Rantala

doi:10.1007/s10971-004-5785-5

Effect of the H₂ annealing on the electrical properties of In₂O₃-SnO₂ thin films

Terho Kololuoma (Corresponding Author), Leena-Sisko Johansson, Arto Maaninen, Joseph M. Campbell, Juha T. Rantala

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

Single-layered In₂O₃-SnO₂ coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H₂-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H₂ annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H₂ annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.

Original language	English
Pages (from-to)	179 - 183
Number of pages	5
Journal	Journal of Sol-Gel Science and Technology
Volume	32
Issue number	1-3
DOIs	https://doi.org/10.1007/s10971-004-5785-5
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

Keywords

transparent conductive oxides
ternary compounds
reductive annealing

Access to Document

10.1007/s10971-004-5785-5

Cite this

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title = "Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films",

abstract = "Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.",

keywords = "transparent conductive oxides, ternary compounds, reductive annealing",

author = "Terho Kololuoma and Leena-Sisko Johansson and Arto Maaninen and Campbell, {Joseph M.} and Rantala, {Juha T.}",

year = "2004",

doi = "10.1007/s10971-004-5785-5",

language = "English",

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pages = "179 -- 183",

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TY - JOUR

T1 - Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films

AU - Kololuoma, Terho

AU - Johansson, Leena-Sisko

AU - Maaninen, Arto

AU - Campbell, Joseph M.

AU - Rantala, Juha T.

PY - 2004

Y1 - 2004

N2 - Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.

AB - Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.

KW - transparent conductive oxides

KW - ternary compounds

KW - reductive annealing

U2 - 10.1007/s10971-004-5785-5

DO - 10.1007/s10971-004-5785-5

M3 - Article

VL - 32

SP - 179

EP - 183

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

SN - 0928-0707

IS - 1-3