Abstract
Single-layered In2O3-SnO2 coatings,
with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a
spin-coating method using coating solutions prepared from tin and indium
2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed
samples were analyzed. The maximum conductivity for the air-annealed
samples, 24 S/cm, were obtained with the smallest Sn content. H2
annealing induces a remarkable permanent increase in the conductivity
of the films with a specific Sn content of 30–40 at.%. The highest
relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect
of the H2 annealing on the chemical composition and the
crystal structure of the fabricated films having a Sn/(Sn + In) ratio of
35.5 at.% was followed using XPS and XRD, respectively.
Original language | English |
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Pages (from-to) | 179 - 183 |
Number of pages | 5 |
Journal | Journal of Sol-Gel Science and Technology |
Volume | 32 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2004 |
MoE publication type | A1 Journal article-refereed |
Keywords
- transparent conductive oxides
- ternary compounds
- reductive annealing