Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 179 - 183 |
| Number of pages | 5 |
| Journal | Journal of Sol-Gel Science and Technology |
| Volume | 32 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2004 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- transparent conductive oxides
- ternary compounds
- reductive annealing
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Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films. / Kololuoma, Terho (Corresponding Author); Johansson, Leena-Sisko; Maaninen, Arto; Campbell, Joseph M.; Rantala, Juha T.
In: Journal of Sol-Gel Science and Technology, Vol. 32, No. 1-3, 2004, p. 179 - 183.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films
AU - Kololuoma, Terho
AU - Johansson, Leena-Sisko
AU - Maaninen, Arto
AU - Campbell, Joseph M.
AU - Rantala, Juha T.
PY - 2004
Y1 - 2004
N2 - Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.
AB - Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.
KW - transparent conductive oxides
KW - ternary compounds
KW - reductive annealing
U2 - 10.1007/s10971-004-5785-5
DO - 10.1007/s10971-004-5785-5
M3 - Article
VL - 32
SP - 179
EP - 183
JO - Journal of Sol-Gel Science and Technology
JF - Journal of Sol-Gel Science and Technology
SN - 0928-0707
IS - 1-3
ER -