Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films

Terho Kololuoma (Corresponding Author), Leena-Sisko Johansson, Arto Maaninen, Joseph M. Campbell, Juha T. Rantala

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Abstract

Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.
Original languageEnglish
Pages (from-to)179 - 183
Number of pages5
JournalJournal of Sol-Gel Science and Technology
Volume32
Issue number1-3
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

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Keywords

  • transparent conductive oxides
  • ternary compounds
  • reductive annealing

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