Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films

Terho Kololuoma (Corresponding Author), Leena-Sisko Johansson, Arto Maaninen, Joseph M. Campbell, Juha T. Rantala

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.
Original languageEnglish
Pages (from-to)179 - 183
Number of pages5
JournalJournal of Sol-Gel Science and Technology
Volume32
Issue number1-3
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Fingerprint

Electric properties
electrical properties
Annealing
Thin films
Coatings
conductivity
Indium
annealing
coating
Tin
Spin coating
thin films
Air
X ray photoelectron spectroscopy
Crystal structure
air
indium
tin
chemical composition
Chemical analysis

Keywords

  • transparent conductive oxides
  • ternary compounds
  • reductive annealing

Cite this

Kololuoma, Terho ; Johansson, Leena-Sisko ; Maaninen, Arto ; Campbell, Joseph M. ; Rantala, Juha T. / Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films. In: Journal of Sol-Gel Science and Technology. 2004 ; Vol. 32, No. 1-3. pp. 179 - 183.
@article{eeb21d4862684a849db9e0304250d9f2,
title = "Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films",
abstract = "Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.{\%}, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.{\%}. The highest relative conductivity increase was 7600{\%} (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.{\%} was followed using XPS and XRD, respectively.",
keywords = "transparent conductive oxides, ternary compounds, reductive annealing",
author = "Terho Kololuoma and Leena-Sisko Johansson and Arto Maaninen and Campbell, {Joseph M.} and Rantala, {Juha T.}",
year = "2004",
doi = "10.1007/s10971-004-5785-5",
language = "English",
volume = "32",
pages = "179 -- 183",
journal = "Journal of Sol-Gel Science and Technology",
issn = "0928-0707",
publisher = "Springer",
number = "1-3",

}

Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films. / Kololuoma, Terho (Corresponding Author); Johansson, Leena-Sisko; Maaninen, Arto; Campbell, Joseph M.; Rantala, Juha T.

In: Journal of Sol-Gel Science and Technology, Vol. 32, No. 1-3, 2004, p. 179 - 183.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films

AU - Kololuoma, Terho

AU - Johansson, Leena-Sisko

AU - Maaninen, Arto

AU - Campbell, Joseph M.

AU - Rantala, Juha T.

PY - 2004

Y1 - 2004

N2 - Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.

AB - Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.

KW - transparent conductive oxides

KW - ternary compounds

KW - reductive annealing

U2 - 10.1007/s10971-004-5785-5

DO - 10.1007/s10971-004-5785-5

M3 - Article

VL - 32

SP - 179

EP - 183

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

SN - 0928-0707

IS - 1-3

ER -