Single-layered In2O3-SnO2 coatings, with a Sn/(Sn + In) ratio of 25–50 at.%, were fabricated by a spin-coating method using coating solutions prepared from tin and indium 2-isopropoxyethoxides. The electrical conductivity of the air- and H2-annealed samples were analyzed. The maximum conductivity for the air-annealed samples, 24 S/cm, were obtained with the smallest Sn content. H2 annealing induces a remarkable permanent increase in the conductivity of the films with a specific Sn content of 30–40 at.%. The highest relative conductivity increase was 7600% (1 S/cm → 76 S/cm). The effect of the H2 annealing on the chemical composition and the crystal structure of the fabricated films having a Sn/(Sn + In) ratio of 35.5 at.% was followed using XPS and XRD, respectively.
- transparent conductive oxides
- ternary compounds
- reductive annealing
Kololuoma, T., Johansson, L-S., Maaninen, A., Campbell, J. M., & Rantala, J. T. (2004). Effect of the H2 annealing on the electrical properties of In2O3-SnO2 thin films. Journal of Sol-Gel Science and Technology, 32(1-3), 179 - 183. https://doi.org/10.1007/s10971-004-5785-5