Effect of UV light and low temperature on solution-processed, high-performance metal-oxide semiconductors and TFTs

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Abstract

This paper focuses on ultra-violet (UV)-curing of solution-processed metal-oxide (MO) semiconductors for application in thin film transistors (TFTs). The goal is to combine low-temperature thermal annealing with UV exposure and achieve printable transistors on flexible plastic substrates. In this paper we focus on the use of two different wavelengths of UV and clarify their effect on the performance of the metal-oxide semiconductors. The electrical properties of TFTs made with these semiconductors are characterized. The results show that wavelength of the UV exposure is critical for optimized performance of the semiconductor and the TFTs.
Original languageEnglish
Title of host publicationProceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Print)978-1-4799-4026-4
DOIs
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication
Event5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland
Duration: 16 Sep 201418 Sep 2014
Conference number: 5th

Conference

Conference5th Electronics System-Integration Technology Conference, ESTC 2014
Abbreviated titleESTC 2014
CountryFinland
CityHelsinki
Period16/09/1418/09/14

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Majumdar, H., Leppäniemi, J., Ojanperä, K., Huttunen, O-H., & Alastalo, A. (2014). Effect of UV light and low temperature on solution-processed, high-performance metal-oxide semiconductors and TFTs. In Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014 IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ESTC.2014.6962762