Effect of UV light and low temperature on solution-processed, high-performance metal-oxide semiconductors and TFTs

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

This paper focuses on ultra-violet (UV)-curing of solution-processed metal-oxide (MO) semiconductors for application in thin film transistors (TFTs). The goal is to combine low-temperature thermal annealing with UV exposure and achieve printable transistors on flexible plastic substrates. In this paper we focus on the use of two different wavelengths of UV and clarify their effect on the performance of the metal-oxide semiconductors. The electrical properties of TFTs made with these semiconductors are characterized. The results show that wavelength of the UV exposure is critical for optimized performance of the semiconductor and the TFTs.
Original languageEnglish
Title of host publicationProceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014
PublisherInstitute of Electrical and Electronic Engineers IEEE
ISBN (Print)978-1-4799-4026-4
DOIs
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication
Event5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland
Duration: 16 Sep 201418 Sep 2014
Conference number: 5th

Conference

Conference5th Electronics System-Integration Technology Conference, ESTC 2014
Abbreviated titleESTC 2014
CountryFinland
CityHelsinki
Period16/09/1418/09/14

Fingerprint

metal oxide semiconductors
ultraviolet radiation
transistors
thin films
temperature
curing
wavelengths
plastics
electrical properties
annealing

Cite this

Majumdar, H., Leppäniemi, J., Ojanperä, K., Huttunen, O-H., & Alastalo, A. (2014). Effect of UV light and low temperature on solution-processed, high-performance metal-oxide semiconductors and TFTs. In Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014 Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/ESTC.2014.6962762
Majumdar, H. ; Leppäniemi, J. ; Ojanperä, K. ; Huttunen, O.-H. ; Alastalo, A. / Effect of UV light and low temperature on solution-processed, high-performance metal-oxide semiconductors and TFTs. Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. Institute of Electrical and Electronic Engineers IEEE, 2014.
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abstract = "This paper focuses on ultra-violet (UV)-curing of solution-processed metal-oxide (MO) semiconductors for application in thin film transistors (TFTs). The goal is to combine low-temperature thermal annealing with UV exposure and achieve printable transistors on flexible plastic substrates. In this paper we focus on the use of two different wavelengths of UV and clarify their effect on the performance of the metal-oxide semiconductors. The electrical properties of TFTs made with these semiconductors are characterized. The results show that wavelength of the UV exposure is critical for optimized performance of the semiconductor and the TFTs.",
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Majumdar, H, Leppäniemi, J, Ojanperä, K, Huttunen, O-H & Alastalo, A 2014, Effect of UV light and low temperature on solution-processed, high-performance metal-oxide semiconductors and TFTs. in Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. Institute of Electrical and Electronic Engineers IEEE, 5th Electronics System-Integration Technology Conference, ESTC 2014, Helsinki, Finland, 16/09/14. https://doi.org/10.1109/ESTC.2014.6962762

Effect of UV light and low temperature on solution-processed, high-performance metal-oxide semiconductors and TFTs. / Majumdar, H.; Leppäniemi, J.; Ojanperä, K.; Huttunen, O.-H.; Alastalo, A.

Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. Institute of Electrical and Electronic Engineers IEEE, 2014.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AB - This paper focuses on ultra-violet (UV)-curing of solution-processed metal-oxide (MO) semiconductors for application in thin film transistors (TFTs). The goal is to combine low-temperature thermal annealing with UV exposure and achieve printable transistors on flexible plastic substrates. In this paper we focus on the use of two different wavelengths of UV and clarify their effect on the performance of the metal-oxide semiconductors. The electrical properties of TFTs made with these semiconductors are characterized. The results show that wavelength of the UV exposure is critical for optimized performance of the semiconductor and the TFTs.

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Majumdar H, Leppäniemi J, Ojanperä K, Huttunen O-H, Alastalo A. Effect of UV light and low temperature on solution-processed, high-performance metal-oxide semiconductors and TFTs. In Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. Institute of Electrical and Electronic Engineers IEEE. 2014 https://doi.org/10.1109/ESTC.2014.6962762