Effect of well coupling on the TE optical modal gain in quantum-well based semiconductor lasers

Philip Weetman; M. Kucharczyk; Marek Wartak

doi:10.1088/0953-8984/14/4/102

Effect of well coupling on the TE optical modal gain in quantum-well based semiconductor lasers

Philip Weetman, M. Kucharczyk, Marek Wartak

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Abstract

The role of coupling between two quantum wells in TE optical modal gain
is analysed within the self-consistent solution of the Poisson, Schrodinger ¨
and 4 × 4 Luttinger–Kohn equations. The many-body effects of bandgap
renormalization, coulombic scattering interactions and a non-Markovian
distribution are also included. The analysis is performed for a 1.55 µm
InGaAsP/InP lattice-matched system grown in the [001] direction. It shows
that electrostatics significantly changes the modal gain in both amplitude and
spectrum. The gain amplitude is larger when electrostatic effects are included
due to better charge localization in the wells. The gain spectrum also changes
due to the modification of the heterostructure potential and hence different
coupling between the wells.

Original language	English
Pages (from-to)	L83-L87
Journal	Journal of Physics: Condensed Matter
Volume	14
Issue number	4
DOIs	https://doi.org/10.1088/0953-8984/14/4/102
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

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Keywords

quantum wells
semiconductor lasers

Cite this

Weetman, P., Kucharczyk, M., & Wartak, M. (2002). Effect of well coupling on the TE optical modal gain in quantum-well based semiconductor lasers. Journal of Physics: Condensed Matter, 14(4), L83-L87. https://doi.org/10.1088/0953-8984/14/4/102

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AB - The role of coupling between two quantum wells in TE optical modal gainis analysed within the self-consistent solution of the Poisson, Schrodinger ¨and 4 × 4 Luttinger–Kohn equations. The many-body effects of bandgaprenormalization, coulombic scattering interactions and a non-Markoviandistribution are also included. The analysis is performed for a 1.55 µmInGaAsP/InP lattice-matched system grown in the [001] direction. It showsthat electrostatics significantly changes the modal gain in both amplitude andspectrum. The gain amplitude is larger when electrostatic effects are includeddue to better charge localization in the wells. The gain spectrum also changesdue to the modification of the heterostructure potential and hence differentcoupling between the wells.

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10.1088/0953-8984/14/4/102