Effect of well coupling on the TE optical modal gain in quantum-well based semiconductor lasers

Philip Weetman, M. Kucharczyk, Marek Wartak

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

The role of coupling between two quantum wells in TE optical modal gain
is analysed within the self-consistent solution of the Poisson, Schrodinger ¨
and 4 × 4 Luttinger–Kohn equations. The many-body effects of bandgap
renormalization, coulombic scattering interactions and a non-Markovian
distribution are also included. The analysis is performed for a 1.55 µm
InGaAsP/InP lattice-matched system grown in the [001] direction. It shows
that electrostatics significantly changes the modal gain in both amplitude and
spectrum. The gain amplitude is larger when electrostatic effects are included
due to better charge localization in the wells. The gain spectrum also changes
due to the modification of the heterostructure potential and hence different
coupling between the wells.
Original languageEnglish
Pages (from-to)L83-L87
JournalJournal of Physics: Condensed Matter
Volume14
Issue number4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Keywords

  • quantum wells
  • semiconductor lasers

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