Effect of well coupling on the TE optical modal gain in quantum-well based semiconductor lasers

Philip Weetman, M Kucharczyk, Marek Wartak

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

The role of coupling between two quantum wells in TE optical modal gain
is analysed within the self-consistent solution of the Poisson, Schrodinger ¨
and 4 × 4 Luttinger–Kohn equations. The many-body effects of bandgap
renormalization, coulombic scattering interactions and a non-Markovian
distribution are also included. The analysis is performed for a 1.55 µm
InGaAsP/InP lattice-matched system grown in the [001] direction. It shows
that electrostatics significantly changes the modal gain in both amplitude and
spectrum. The gain amplitude is larger when electrostatic effects are included
due to better charge localization in the wells. The gain spectrum also changes
due to the modification of the heterostructure potential and hence different
coupling between the wells.
Original languageEnglish
Pages (from-to)L83-L87
JournalJournal of Physics: Condensed Matter
Volume14
Issue number4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

Semiconductor quantum wells
Semiconductor lasers
Electrostatics
semiconductor lasers
quantum wells
electrostatics
Heterojunctions
Scattering
scattering
interactions
Direction compound

Keywords

  • quantum wells
  • semiconductor lasers

Cite this

Weetman, Philip ; Kucharczyk, M ; Wartak, Marek. / Effect of well coupling on the TE optical modal gain in quantum-well based semiconductor lasers. In: Journal of Physics: Condensed Matter. 2002 ; Vol. 14, No. 4. pp. L83-L87.
@article{32e2e45acf8d4a518177cfd31a08bbc1,
title = "Effect of well coupling on the TE optical modal gain in quantum-well based semiconductor lasers",
abstract = "The role of coupling between two quantum wells in TE optical modal gainis analysed within the self-consistent solution of the Poisson, Schrodinger ¨and 4 × 4 Luttinger–Kohn equations. The many-body effects of bandgaprenormalization, coulombic scattering interactions and a non-Markoviandistribution are also included. The analysis is performed for a 1.55 µmInGaAsP/InP lattice-matched system grown in the [001] direction. It showsthat electrostatics significantly changes the modal gain in both amplitude andspectrum. The gain amplitude is larger when electrostatic effects are includeddue to better charge localization in the wells. The gain spectrum also changesdue to the modification of the heterostructure potential and hence differentcoupling between the wells.",
keywords = "quantum wells, semiconductor lasers",
author = "Philip Weetman and M Kucharczyk and Marek Wartak",
year = "2002",
doi = "10.1088/0953-8984/14/4/102",
language = "English",
volume = "14",
pages = "L83--L87",
journal = "Journal of Physics: Condensed Matter",
issn = "0953-8984",
publisher = "Institute of Physics IOP",
number = "4",

}

Effect of well coupling on the TE optical modal gain in quantum-well based semiconductor lasers. / Weetman, Philip; Kucharczyk, M; Wartak, Marek.

In: Journal of Physics: Condensed Matter, Vol. 14, No. 4, 2002, p. L83-L87.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of well coupling on the TE optical modal gain in quantum-well based semiconductor lasers

AU - Weetman, Philip

AU - Kucharczyk, M

AU - Wartak, Marek

PY - 2002

Y1 - 2002

N2 - The role of coupling between two quantum wells in TE optical modal gainis analysed within the self-consistent solution of the Poisson, Schrodinger ¨and 4 × 4 Luttinger–Kohn equations. The many-body effects of bandgaprenormalization, coulombic scattering interactions and a non-Markoviandistribution are also included. The analysis is performed for a 1.55 µmInGaAsP/InP lattice-matched system grown in the [001] direction. It showsthat electrostatics significantly changes the modal gain in both amplitude andspectrum. The gain amplitude is larger when electrostatic effects are includeddue to better charge localization in the wells. The gain spectrum also changesdue to the modification of the heterostructure potential and hence differentcoupling between the wells.

AB - The role of coupling between two quantum wells in TE optical modal gainis analysed within the self-consistent solution of the Poisson, Schrodinger ¨and 4 × 4 Luttinger–Kohn equations. The many-body effects of bandgaprenormalization, coulombic scattering interactions and a non-Markoviandistribution are also included. The analysis is performed for a 1.55 µmInGaAsP/InP lattice-matched system grown in the [001] direction. It showsthat electrostatics significantly changes the modal gain in both amplitude andspectrum. The gain amplitude is larger when electrostatic effects are includeddue to better charge localization in the wells. The gain spectrum also changesdue to the modification of the heterostructure potential and hence differentcoupling between the wells.

KW - quantum wells

KW - semiconductor lasers

U2 - 10.1088/0953-8984/14/4/102

DO - 10.1088/0953-8984/14/4/102

M3 - Article

VL - 14

SP - L83-L87

JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

SN - 0953-8984

IS - 4

ER -