Abstract
The role of coupling between two quantum wells in TE optical modal gain
is analysed within the self-consistent solution of the Poisson, Schrodinger ¨
and 4 × 4 Luttinger–Kohn equations. The many-body effects of bandgap
renormalization, coulombic scattering interactions and a non-Markovian
distribution are also included. The analysis is performed for a 1.55 µm
InGaAsP/InP lattice-matched system grown in the [001] direction. It shows
that electrostatics significantly changes the modal gain in both amplitude and
spectrum. The gain amplitude is larger when electrostatic effects are included
due to better charge localization in the wells. The gain spectrum also changes
due to the modification of the heterostructure potential and hence different
coupling between the wells.
is analysed within the self-consistent solution of the Poisson, Schrodinger ¨
and 4 × 4 Luttinger–Kohn equations. The many-body effects of bandgap
renormalization, coulombic scattering interactions and a non-Markovian
distribution are also included. The analysis is performed for a 1.55 µm
InGaAsP/InP lattice-matched system grown in the [001] direction. It shows
that electrostatics significantly changes the modal gain in both amplitude and
spectrum. The gain amplitude is larger when electrostatic effects are included
due to better charge localization in the wells. The gain spectrum also changes
due to the modification of the heterostructure potential and hence different
coupling between the wells.
| Original language | English |
|---|---|
| Pages (from-to) | L83-L87 |
| Journal | Journal of Physics: Condensed Matter |
| Volume | 14 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2002 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- quantum wells
- semiconductor lasers