Effects of defects on charge density waves in layered dichalcogenides

Hannu Mutka; M. Housseau; J. Pelissier; R. Ayroles; C. Roucau

doi:10.1016/0038-1098(84)90930-X

Effects of defects on charge density waves in layered dichalcogenides

Hannu Mutka, M. Housseau, J. Pelissier, R. Ayroles, C. Roucau

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

13 Citations (Scopus)

Abstract

We have measured the Charge Density Wave (CDW) onset temperature, T₀, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe₂, 2H-TaS₂ and 1T-VSe₂ containing a well controlled concentration, c, of irradiation-induced defects. When T₀ increases from 35 K (2H-NbSe₂) to 110 K (1T-VSe₂), — dT₀/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T₀ and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.

Original language	English
Pages (from-to)	161 - 164
Number of pages	4
Journal	Solid State Communications
Volume	50
Issue number	2
DOIs	https://doi.org/10.1016/0038-1098(84)90930-X
Publication status	Published - 1984
MoE publication type	Not Eligible

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Mutka, H., Housseau, M., Pelissier, J., Ayroles, R., & Roucau, C. (1984). Effects of defects on charge density waves in layered dichalcogenides. Solid State Communications, 50(2), 161 - 164. https://doi.org/10.1016/0038-1098(84)90930-X

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title = "Effects of defects on charge density waves in layered dichalcogenides",

abstract = "We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.",

author = "Hannu Mutka and M. Housseau and J. Pelissier and R. Ayroles and C. Roucau",

year = "1984",

doi = "10.1016/0038-1098(84)90930-X",

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T1 - Effects of defects on charge density waves in layered dichalcogenides

AU - Mutka, Hannu

AU - Housseau, M.

AU - Pelissier, J.

AU - Ayroles, R.

AU - Roucau, C.

PY - 1984

Y1 - 1984

N2 - We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.

AB - We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.

U2 - 10.1016/0038-1098(84)90930-X

DO - 10.1016/0038-1098(84)90930-X

M3 - Article

VL - 50

SP - 161

EP - 164

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

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ER -