Effects of defects on charge density waves in layered dichalcogenides

Hannu Mutka, M. Housseau, J. Pelissier, R. Ayroles, C. Roucau

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)

Abstract

We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.

Original languageEnglish
Pages (from-to)161 - 164
Number of pages4
JournalSolid State Communications
Volume50
Issue number2
DOIs
Publication statusPublished - 1984
MoE publication typeNot Eligible

    Fingerprint

Cite this

Mutka, H., Housseau, M., Pelissier, J., Ayroles, R., & Roucau, C. (1984). Effects of defects on charge density waves in layered dichalcogenides. Solid State Communications, 50(2), 161 - 164. https://doi.org/10.1016/0038-1098(84)90930-X