Effects of defects on charge density waves in layered dichalcogenides

Hannu Mutka, M. Housseau, J. Pelissier, R. Ayroles, C. Roucau

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)

Abstract

We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.

Original languageEnglish
Pages (from-to)161 - 164
Number of pages4
JournalSolid State Communications
Volume50
Issue number2
DOIs
Publication statusPublished - 1984
MoE publication typeNot Eligible

Fingerprint

Charge density waves
Defects
defects
phase coherence
Electron diffraction
electron diffraction
Irradiation
Scattering
electrical resistivity
irradiation
scattering
Temperature
temperature

Cite this

Mutka, H., Housseau, M., Pelissier, J., Ayroles, R., & Roucau, C. (1984). Effects of defects on charge density waves in layered dichalcogenides. Solid State Communications, 50(2), 161 - 164. https://doi.org/10.1016/0038-1098(84)90930-X
Mutka, Hannu ; Housseau, M. ; Pelissier, J. ; Ayroles, R. ; Roucau, C. / Effects of defects on charge density waves in layered dichalcogenides. In: Solid State Communications. 1984 ; Vol. 50, No. 2. pp. 161 - 164.
@article{6d94129d411b470781e3370ab053fe86,
title = "Effects of defects on charge density waves in layered dichalcogenides",
abstract = "We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/{\%}, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.",
author = "Hannu Mutka and M. Housseau and J. Pelissier and R. Ayroles and C. Roucau",
year = "1984",
doi = "10.1016/0038-1098(84)90930-X",
language = "English",
volume = "50",
pages = "161 -- 164",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier",
number = "2",

}

Mutka, H, Housseau, M, Pelissier, J, Ayroles, R & Roucau, C 1984, 'Effects of defects on charge density waves in layered dichalcogenides', Solid State Communications, vol. 50, no. 2, pp. 161 - 164. https://doi.org/10.1016/0038-1098(84)90930-X

Effects of defects on charge density waves in layered dichalcogenides. / Mutka, Hannu; Housseau, M.; Pelissier, J.; Ayroles, R.; Roucau, C.

In: Solid State Communications, Vol. 50, No. 2, 1984, p. 161 - 164.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effects of defects on charge density waves in layered dichalcogenides

AU - Mutka, Hannu

AU - Housseau, M.

AU - Pelissier, J.

AU - Ayroles, R.

AU - Roucau, C.

PY - 1984

Y1 - 1984

N2 - We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.

AB - We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.

U2 - 10.1016/0038-1098(84)90930-X

DO - 10.1016/0038-1098(84)90930-X

M3 - Article

VL - 50

SP - 161

EP - 164

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 2

ER -