Abstract
We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.
| Original language | English |
|---|---|
| Pages (from-to) | 161 - 164 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 50 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1984 |
| MoE publication type | Not Eligible |
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Effects of defects on charge density waves in layered dichalcogenides. / Mutka, Hannu; Housseau, M.; Pelissier, J.; Ayroles, R.; Roucau, C.
In: Solid State Communications, Vol. 50, No. 2, 1984, p. 161 - 164.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Effects of defects on charge density waves in layered dichalcogenides
AU - Mutka, Hannu
AU - Housseau, M.
AU - Pelissier, J.
AU - Ayroles, R.
AU - Roucau, C.
PY - 1984
Y1 - 1984
N2 - We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.
AB - We have measured the Charge Density Wave (CDW) onset temperature, T0, and the normal state resistivity increase, dϱ/dc, in the layered compounds 2H-NbSe2, 2H-TaS2 and 1T-VSe2 containing a well controlled concentration, c, of irradiation-induced defects. When T0 increases from 35 K (2H-NbSe2) to 110 K (1T-VSe2), — dT0/dc decreases from 110 to 20 K/%, in spite of the fourfold increase of dθ/dc. This correlation cannot be explained by supposing that a common defect scattering rate controls both T0 and ϱ. Electron diffraction results give evidence of CDW distortions even in the absence of macroscopic onset transitions indicating further that the main effect of defects is to destroy the phase coherence of the CDW instead of its amplitude.
U2 - 10.1016/0038-1098(84)90930-X
DO - 10.1016/0038-1098(84)90930-X
M3 - Article
VL - 50
SP - 161
EP - 164
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 2
ER -