Effects of ion mixing on Al-Si contacts

C. Pai, David Scott, Silvanus Lau, Ilkka Suni, Simo Eränen

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2 Citations (Scopus)

Abstract

Al-Si contacts irradiated with arsenic ions and annealed at 200–500°C have been investigated for interfacial reactions and variations in electrical contact resistance. For arsenic doses above the amorphization threshold of silicon (about 2×1014 ions cm-2) the crystallographic reaction pits become irregular in shape and seem to be confined to the amorphous layer. The contact resistance on n+-Si is almost one order of magnitude higher in irradiated samples as compared with unirradiated samples after annealing at 425°C for 10 min. Nuclear reaction analysis indicates the presence of a thin interfacial oxide layer in Al-n+-Si samples. Differences in surface morphologies of ion-irradiated Al-n+-Si and Al-p+-Si samples after long-term annealing at 200°C suggest that the dispersion of the interfacial oxide is very limited for the ion doses used in this study.

Original languageEnglish
Pages (from-to)241 - 249
Number of pages9
JournalThin Solid Films
Volume126
Issue number3-4
DOIs
Publication statusPublished - 1985
MoE publication typeNot Eligible

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    Pai, C., Scott, D., Lau, S., Suni, I., & Eränen, S. (1985). Effects of ion mixing on Al-Si contacts. Thin Solid Films, 126(3-4), 241 - 249. https://doi.org/10.1016/0040-6090(85)90317-7