Effects of ion mixing on Al-Si contacts

C. Pai, David Scott, Silvanus Lau, Ilkka Suni, Simo Eränen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Al-Si contacts irradiated with arsenic ions and annealed at 200–500°C have been investigated for interfacial reactions and variations in electrical contact resistance. For arsenic doses above the amorphization threshold of silicon (about 2×1014 ions cm-2) the crystallographic reaction pits become irregular in shape and seem to be confined to the amorphous layer. The contact resistance on n+-Si is almost one order of magnitude higher in irradiated samples as compared with unirradiated samples after annealing at 425°C for 10 min. Nuclear reaction analysis indicates the presence of a thin interfacial oxide layer in Al-n+-Si samples. Differences in surface morphologies of ion-irradiated Al-n+-Si and Al-p+-Si samples after long-term annealing at 200°C suggest that the dispersion of the interfacial oxide is very limited for the ion doses used in this study.

Original languageEnglish
Pages (from-to)241 - 249
Number of pages9
JournalThin Solid Films
Volume126
Issue number3-4
DOIs
Publication statusPublished - 1985
MoE publication typeNot Eligible

Fingerprint

Ions
Arsenic
Contact resistance
contact resistance
arsenic
Oxides
ions
Annealing
dosage
annealing
Nuclear reactions
oxides
Amorphization
Silicon
Surface chemistry
nuclear reactions
Surface morphology
thresholds
silicon

Cite this

Pai, C., Scott, D., Lau, S., Suni, I., & Eränen, S. (1985). Effects of ion mixing on Al-Si contacts. Thin Solid Films, 126(3-4), 241 - 249. https://doi.org/10.1016/0040-6090(85)90317-7
Pai, C. ; Scott, David ; Lau, Silvanus ; Suni, Ilkka ; Eränen, Simo. / Effects of ion mixing on Al-Si contacts. In: Thin Solid Films. 1985 ; Vol. 126, No. 3-4. pp. 241 - 249.
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abstract = "Al-Si contacts irradiated with arsenic ions and annealed at 200–500°C have been investigated for interfacial reactions and variations in electrical contact resistance. For arsenic doses above the amorphization threshold of silicon (about 2×1014 ions cm-2) the crystallographic reaction pits become irregular in shape and seem to be confined to the amorphous layer. The contact resistance on n+-Si is almost one order of magnitude higher in irradiated samples as compared with unirradiated samples after annealing at 425°C for 10 min. Nuclear reaction analysis indicates the presence of a thin interfacial oxide layer in Al-n+-Si samples. Differences in surface morphologies of ion-irradiated Al-n+-Si and Al-p+-Si samples after long-term annealing at 200°C suggest that the dispersion of the interfacial oxide is very limited for the ion doses used in this study.",
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Pai, C, Scott, D, Lau, S, Suni, I & Eränen, S 1985, 'Effects of ion mixing on Al-Si contacts', Thin Solid Films, vol. 126, no. 3-4, pp. 241 - 249. https://doi.org/10.1016/0040-6090(85)90317-7

Effects of ion mixing on Al-Si contacts. / Pai, C.; Scott, David; Lau, Silvanus; Suni, Ilkka; Eränen, Simo.

In: Thin Solid Films, Vol. 126, No. 3-4, 1985, p. 241 - 249.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effects of ion mixing on Al-Si contacts

AU - Pai, C.

AU - Scott, David

AU - Lau, Silvanus

AU - Suni, Ilkka

AU - Eränen, Simo

PY - 1985

Y1 - 1985

N2 - Al-Si contacts irradiated with arsenic ions and annealed at 200–500°C have been investigated for interfacial reactions and variations in electrical contact resistance. For arsenic doses above the amorphization threshold of silicon (about 2×1014 ions cm-2) the crystallographic reaction pits become irregular in shape and seem to be confined to the amorphous layer. The contact resistance on n+-Si is almost one order of magnitude higher in irradiated samples as compared with unirradiated samples after annealing at 425°C for 10 min. Nuclear reaction analysis indicates the presence of a thin interfacial oxide layer in Al-n+-Si samples. Differences in surface morphologies of ion-irradiated Al-n+-Si and Al-p+-Si samples after long-term annealing at 200°C suggest that the dispersion of the interfacial oxide is very limited for the ion doses used in this study.

AB - Al-Si contacts irradiated with arsenic ions and annealed at 200–500°C have been investigated for interfacial reactions and variations in electrical contact resistance. For arsenic doses above the amorphization threshold of silicon (about 2×1014 ions cm-2) the crystallographic reaction pits become irregular in shape and seem to be confined to the amorphous layer. The contact resistance on n+-Si is almost one order of magnitude higher in irradiated samples as compared with unirradiated samples after annealing at 425°C for 10 min. Nuclear reaction analysis indicates the presence of a thin interfacial oxide layer in Al-n+-Si samples. Differences in surface morphologies of ion-irradiated Al-n+-Si and Al-p+-Si samples after long-term annealing at 200°C suggest that the dispersion of the interfacial oxide is very limited for the ion doses used in this study.

U2 - 10.1016/0040-6090(85)90317-7

DO - 10.1016/0040-6090(85)90317-7

M3 - Article

VL - 126

SP - 241

EP - 249

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 3-4

ER -

Pai C, Scott D, Lau S, Suni I, Eränen S. Effects of ion mixing on Al-Si contacts. Thin Solid Films. 1985;126(3-4):241 - 249. https://doi.org/10.1016/0040-6090(85)90317-7