Effects of ion mixing on Al-Si contacts

C.S. Pai; David Scott; Silvanus Lau; Ilkka Suni; Simo Eränen

doi:10.1016/0040-6090(85)90317-7

Effects of ion mixing on Al-Si contacts

C.S. Pai, David Scott, Silvanus Lau, Ilkka Suni, Simo Eränen

VTT Technical Research Centre of Finland

University of California, San Diego

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

Al-Si contacts irradiated with arsenic ions and annealed at 200–500°C have been investigated for interfacial reactions and variations in electrical contact resistance. For arsenic doses above the amorphization threshold of silicon (about 2×10¹⁴ ions cm^-2) the crystallographic reaction pits become irregular in shape and seem to be confined to the amorphous layer. The contact resistance on n⁺-Si is almost one order of magnitude higher in irradiated samples as compared with unirradiated samples after annealing at 425°C for 10 min. Nuclear reaction analysis indicates the presence of a thin interfacial oxide layer in Al-n⁺-Si samples. Differences in surface morphologies of ion-irradiated Al-n⁺-Si and Al-p⁺-Si samples after long-term annealing at 200°C suggest that the dispersion of the interfacial oxide is very limited for the ion doses used in this study.

Original language	English
Pages (from-to)	241-249
Journal	Thin Solid Films
Volume	126
Issue number	3-4
DOIs	https://doi.org/10.1016/0040-6090(85)90317-7
Publication status	Published - 1985
MoE publication type	A1 Journal article-refereed

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title = "Effects of ion mixing on Al-Si contacts",

abstract = "Al-Si contacts irradiated with arsenic ions and annealed at 200–500°C have been investigated for interfacial reactions and variations in electrical contact resistance. For arsenic doses above the amorphization threshold of silicon (about 2×1014 ions cm-2) the crystallographic reaction pits become irregular in shape and seem to be confined to the amorphous layer. The contact resistance on n+-Si is almost one order of magnitude higher in irradiated samples as compared with unirradiated samples after annealing at 425°C for 10 min. Nuclear reaction analysis indicates the presence of a thin interfacial oxide layer in Al-n+-Si samples. Differences in surface morphologies of ion-irradiated Al-n+-Si and Al-p+-Si samples after long-term annealing at 200°C suggest that the dispersion of the interfacial oxide is very limited for the ion doses used in this study.",

author = "C.S. Pai and David Scott and Silvanus Lau and Ilkka Suni and Simo Er{\"a}nen",

year = "1985",

doi = "10.1016/0040-6090(85)90317-7",

language = "English",

volume = "126",

pages = "241--249",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "3-4",

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TY - JOUR

T1 - Effects of ion mixing on Al-Si contacts

AU - Pai, C.S.

AU - Scott, David

AU - Lau, Silvanus

AU - Suni, Ilkka

AU - Eränen, Simo

PY - 1985

Y1 - 1985

N2 - Al-Si contacts irradiated with arsenic ions and annealed at 200–500°C have been investigated for interfacial reactions and variations in electrical contact resistance. For arsenic doses above the amorphization threshold of silicon (about 2×1014 ions cm-2) the crystallographic reaction pits become irregular in shape and seem to be confined to the amorphous layer. The contact resistance on n+-Si is almost one order of magnitude higher in irradiated samples as compared with unirradiated samples after annealing at 425°C for 10 min. Nuclear reaction analysis indicates the presence of a thin interfacial oxide layer in Al-n+-Si samples. Differences in surface morphologies of ion-irradiated Al-n+-Si and Al-p+-Si samples after long-term annealing at 200°C suggest that the dispersion of the interfacial oxide is very limited for the ion doses used in this study.

AB - Al-Si contacts irradiated with arsenic ions and annealed at 200–500°C have been investigated for interfacial reactions and variations in electrical contact resistance. For arsenic doses above the amorphization threshold of silicon (about 2×1014 ions cm-2) the crystallographic reaction pits become irregular in shape and seem to be confined to the amorphous layer. The contact resistance on n+-Si is almost one order of magnitude higher in irradiated samples as compared with unirradiated samples after annealing at 425°C for 10 min. Nuclear reaction analysis indicates the presence of a thin interfacial oxide layer in Al-n+-Si samples. Differences in surface morphologies of ion-irradiated Al-n+-Si and Al-p+-Si samples after long-term annealing at 200°C suggest that the dispersion of the interfacial oxide is very limited for the ion doses used in this study.

U2 - 10.1016/0040-6090(85)90317-7

DO - 10.1016/0040-6090(85)90317-7

M3 - Article

SN - 0040-6090

VL - 126

SP - 241

EP - 249

JO - Thin Solid Films

JF - Thin Solid Films

IS - 3-4

ER -

Effects of ion mixing on Al-Si contacts

Abstract

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