Effects of low energy e-beam irradiation on cathodoluminescence from GaN

Sami Suihkonen; Henri Nykänen; Tomoyuki Tanikawa; Masahito Yamaguchi; Yoshio Honda; Hiroshi Amano

doi:10.1002/pssa.201228457

Effects of low energy e-beam irradiation on cathodoluminescence from GaN

Sami Suihkonen
, Henri Nykänen
, Tomoyuki Tanikawa
, Masahito Yamaguchi
, Yoshio Honda
, Hiroshi Amano

Not published at VTT

Aalto University
Nagoya University

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

We present cathodoluminescence (CL) studies on low energy e-beam irradiated (LEEBI) metal-organic vapor phase epitaxy (MOVPE) grown GaN films. High intensity LEEBI has been reported to reduce the band-edge photoluminescence intensity of MOVPE grown GaN films. Here we observe similar reduction of band-edge CL intensity with increasing LEEBI dose. The irradiation damage is found to be concentrated in the LEEBI energy dissipation depth by CL depth profiling. We have previously attributed the LEEBI induced reduction of band-edge intensity to the activation of in-grown Ga-vacancies. Here we observe no increase in the relative intensity of defect related yellow or blue CL emission peaks in the LEEBI treated samples. This indicates that blue or yellow emission in undoped GaN is not related to in-grown Ga-vacancies. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	383-385
Number of pages	3
Journal	Physica Status Solidi A: Applications and Materials Science
Volume	210
Issue number	2
DOIs	https://doi.org/10.1002/pssa.201228457
Publication status	Published - Feb 2013
MoE publication type	A1 Journal article-refereed

Keywords

cathodoluminescence
Ga-vacancy
GaN
LEEBI

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Cite this

@article{df49e6551e5f49358dc609f32c5adf48,

title = "Effects of low energy e-beam irradiation on cathodoluminescence from GaN",

abstract = "We present cathodoluminescence (CL) studies on low energy e-beam irradiated (LEEBI) metal-organic vapor phase epitaxy (MOVPE) grown GaN films. High intensity LEEBI has been reported to reduce the band-edge photoluminescence intensity of MOVPE grown GaN films. Here we observe similar reduction of band-edge CL intensity with increasing LEEBI dose. The irradiation damage is found to be concentrated in the LEEBI energy dissipation depth by CL depth profiling. We have previously attributed the LEEBI induced reduction of band-edge intensity to the activation of in-grown Ga-vacancies. Here we observe no increase in the relative intensity of defect related yellow or blue CL emission peaks in the LEEBI treated samples. This indicates that blue or yellow emission in undoped GaN is not related to in-grown Ga-vacancies. Copyright {\textcopyright} 2013 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

keywords = "cathodoluminescence, Ga-vacancy, GaN, LEEBI",

author = "Sami Suihkonen and Henri Nyk{\"a}nen and Tomoyuki Tanikawa and Masahito Yamaguchi and Yoshio Honda and Hiroshi Amano",

year = "2013",

month = feb,

doi = "10.1002/pssa.201228457",

language = "English",

volume = "210",

pages = "383--385",

journal = "Physica Status Solidi A: Applications and Materials Science",

issn = "1862-6300",

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number = "2",

}

TY - JOUR

T1 - Effects of low energy e-beam irradiation on cathodoluminescence from GaN

AU - Suihkonen, Sami

AU - Nykänen, Henri

AU - Tanikawa, Tomoyuki

AU - Yamaguchi, Masahito

AU - Honda, Yoshio

AU - Amano, Hiroshi

PY - 2013/2

Y1 - 2013/2

N2 - We present cathodoluminescence (CL) studies on low energy e-beam irradiated (LEEBI) metal-organic vapor phase epitaxy (MOVPE) grown GaN films. High intensity LEEBI has been reported to reduce the band-edge photoluminescence intensity of MOVPE grown GaN films. Here we observe similar reduction of band-edge CL intensity with increasing LEEBI dose. The irradiation damage is found to be concentrated in the LEEBI energy dissipation depth by CL depth profiling. We have previously attributed the LEEBI induced reduction of band-edge intensity to the activation of in-grown Ga-vacancies. Here we observe no increase in the relative intensity of defect related yellow or blue CL emission peaks in the LEEBI treated samples. This indicates that blue or yellow emission in undoped GaN is not related to in-grown Ga-vacancies. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We present cathodoluminescence (CL) studies on low energy e-beam irradiated (LEEBI) metal-organic vapor phase epitaxy (MOVPE) grown GaN films. High intensity LEEBI has been reported to reduce the band-edge photoluminescence intensity of MOVPE grown GaN films. Here we observe similar reduction of band-edge CL intensity with increasing LEEBI dose. The irradiation damage is found to be concentrated in the LEEBI energy dissipation depth by CL depth profiling. We have previously attributed the LEEBI induced reduction of band-edge intensity to the activation of in-grown Ga-vacancies. Here we observe no increase in the relative intensity of defect related yellow or blue CL emission peaks in the LEEBI treated samples. This indicates that blue or yellow emission in undoped GaN is not related to in-grown Ga-vacancies. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - cathodoluminescence

KW - Ga-vacancy

KW - GaN

KW - LEEBI

U2 - 10.1002/pssa.201228457

DO - 10.1002/pssa.201228457

M3 - Article

SN - 1862-6300

VL - 210

SP - 383

EP - 385

JO - Physica Status Solidi A: Applications and Materials Science

JF - Physica Status Solidi A: Applications and Materials Science

IS - 2

ER -

Effects of low energy e-beam irradiation on cathodoluminescence from GaN

Abstract

Keywords

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