Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures

V. Polojärvi (Corresponding Author), J. Salmi, A. Schramm, A. Tukiainen, M. Guina, Janne Pakarinen, E. Arola, J. Lng, I. J. Väyrynen, P. Laukkanen

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Abstract

We report the influence of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH4)2S treated samples as compared to the untreated sample. After annealing, also the NH4OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO2/GaAs, in particular, with changes found in Ga 3d spectra.
Original languageEnglish
Article number111109
JournalApplied Physics Letters
Volume97
Issue number11
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

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surface treatment
quantum wells
photoluminescence
annealing
x ray diffraction
photoelectric emission
optical properties
x rays

Keywords

  • diffusion
  • gallium arsenide
  • gallium compounds
  • III-V semiconductors
  • indium compounds
  • photoluminescence
  • rapid thermal annealing
  • semiconductor quantum wells
  • spectral line shift
  • surface treatment
  • X-ray diffraction
  • X-ray photoelectron spectra

Cite this

Polojärvi, V. ; Salmi, J. ; Schramm, A. ; Tukiainen, A. ; Guina, M. ; Pakarinen, Janne ; Arola, E. ; Lng, J. ; Väyrynen, I. J. ; Laukkanen, P. / Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures. In: Applied Physics Letters. 2010 ; Vol. 97, No. 11.
@article{1b4a3ca1e4dd4bdaa00561c07c988f31,
title = "Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures",
abstract = "We report the influence of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH4)2S treated samples as compared to the untreated sample. After annealing, also the NH4OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO2/GaAs, in particular, with changes found in Ga 3d spectra.",
keywords = "diffusion, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, photoluminescence, rapid thermal annealing, semiconductor quantum wells, spectral line shift, surface treatment, X-ray diffraction, X-ray photoelectron spectra",
author = "V. Poloj{\"a}rvi and J. Salmi and A. Schramm and A. Tukiainen and M. Guina and Janne Pakarinen and E. Arola and J. Lng and V{\"a}yrynen, {I. J.} and P. Laukkanen",
year = "2010",
doi = "10.1063/1.3487784",
language = "English",
volume = "97",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "11",

}

Polojärvi, V, Salmi, J, Schramm, A, Tukiainen, A, Guina, M, Pakarinen, J, Arola, E, Lng, J, Väyrynen, IJ & Laukkanen, P 2010, 'Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures', Applied Physics Letters, vol. 97, no. 11, 111109. https://doi.org/10.1063/1.3487784

Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures. / Polojärvi, V. (Corresponding Author); Salmi, J.; Schramm, A.; Tukiainen, A.; Guina, M.; Pakarinen, Janne; Arola, E.; Lng, J.; Väyrynen, I. J.; Laukkanen, P.

In: Applied Physics Letters, Vol. 97, No. 11, 111109, 2010.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures

AU - Polojärvi, V.

AU - Salmi, J.

AU - Schramm, A.

AU - Tukiainen, A.

AU - Guina, M.

AU - Pakarinen, Janne

AU - Arola, E.

AU - Lng, J.

AU - Väyrynen, I. J.

AU - Laukkanen, P.

PY - 2010

Y1 - 2010

N2 - We report the influence of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH4)2S treated samples as compared to the untreated sample. After annealing, also the NH4OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO2/GaAs, in particular, with changes found in Ga 3d spectra.

AB - We report the influence of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH4)2S treated samples as compared to the untreated sample. After annealing, also the NH4OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO2/GaAs, in particular, with changes found in Ga 3d spectra.

KW - diffusion

KW - gallium arsenide

KW - gallium compounds

KW - III-V semiconductors

KW - indium compounds

KW - photoluminescence

KW - rapid thermal annealing

KW - semiconductor quantum wells

KW - spectral line shift

KW - surface treatment

KW - X-ray diffraction

KW - X-ray photoelectron spectra

U2 - 10.1063/1.3487784

DO - 10.1063/1.3487784

M3 - Article

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 111109

ER -