Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures

V. Polojärvi (Corresponding Author), J. Salmi, A. Schramm, A. Tukiainen, M. Guina, Janne Pakarinen, E. Arola, J. Lng, I. J. Väyrynen, P. Laukkanen

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

We report the influence of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH4)2S treated samples as compared to the untreated sample. After annealing, also the NH4OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO2/GaAs, in particular, with changes found in Ga 3d spectra.
Original languageEnglish
Article number111109
JournalApplied Physics Letters
Volume97
Issue number11
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Keywords

  • diffusion
  • gallium arsenide
  • gallium compounds
  • III-V semiconductors
  • indium compounds
  • photoluminescence
  • rapid thermal annealing
  • semiconductor quantum wells
  • spectral line shift
  • surface treatment
  • X-ray diffraction
  • X-ray photoelectron spectra

Fingerprint Dive into the research topics of 'Effects of (NH<sub>4</sub>)<sub>2</sub> S and NH<sub>4 </sub>OH surface treatments prior to SiO<sub>2</sub> capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures'. Together they form a unique fingerprint.

  • Cite this

    Polojärvi, V., Salmi, J., Schramm, A., Tukiainen, A., Guina, M., Pakarinen, J., Arola, E., Lng, J., Väyrynen, I. J., & Laukkanen, P. (2010). Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures. Applied Physics Letters, 97(11), [111109]. https://doi.org/10.1063/1.3487784