Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures

V. Polojärvi; J. Salmi; A. Schramm; A. Tukiainen; M. Guina; Janne Pakarinen; E. Arola; J. Lng; I. J. Väyrynen; P. Laukkanen

doi:10.1063/1.3487784

Effects of (NH₄)₂ S and NH₄OH surface treatments prior to SiO₂ capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures

V. Polojärvi (Corresponding Author), J. Salmi, A. Schramm, A. Tukiainen, M. Guina, Janne Pakarinen, E. Arola, J. Lng, I. J. Väyrynen, P. Laukkanen

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Abstract

We report the influence of (NH₄)₂S and NH₄OH surface treatments prior to SiO₂capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH₄)₂S treated samples as compared to the untreated sample. After annealing, also the NH₄OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO₂/GaAs, in particular, with changes found in Ga 3d spectra.

Original language	English
Article number	111109
Journal	Applied Physics Letters
Volume	97
Issue number	11
DOIs	https://doi.org/10.1063/1.3487784
Publication status	Published - 2010
MoE publication type	A1 Journal article-refereed

Keywords

diffusion
gallium arsenide
gallium compounds
III-V semiconductors
indium compounds
photoluminescence
rapid thermal annealing
semiconductor quantum wells
spectral line shift
surface treatment
X-ray diffraction
X-ray photoelectron spectra

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10.1063/1.3487784

Cite this

@article{1b4a3ca1e4dd4bdaa00561c07c988f31,

title = "Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures",

abstract = "We report the influence of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH4)2S treated samples as compared to the untreated sample. After annealing, also the NH4OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO2/GaAs, in particular, with changes found in Ga 3d spectra.",

keywords = "diffusion, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, photoluminescence, rapid thermal annealing, semiconductor quantum wells, spectral line shift, surface treatment, X-ray diffraction, X-ray photoelectron spectra",

author = "V. Poloj{\"a}rvi and J. Salmi and A. Schramm and A. Tukiainen and M. Guina and Janne Pakarinen and E. Arola and J. Lng and V{\"a}yrynen, {I. J.} and P. Laukkanen",

year = "2010",

doi = "10.1063/1.3487784",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "11",

}

TY - JOUR

T1 - Effects of (NH4)2 S and NH4 OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures

AU - Polojärvi, V.

AU - Salmi, J.

AU - Schramm, A.

AU - Tukiainen, A.

AU - Guina, M.

AU - Pakarinen, Janne

AU - Arola, E.

AU - Lng, J.

AU - Väyrynen, I. J.

AU - Laukkanen, P.

PY - 2010

Y1 - 2010

N2 - We report the influence of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH4)2S treated samples as compared to the untreated sample. After annealing, also the NH4OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO2/GaAs, in particular, with changes found in Ga 3d spectra.

AB - We report the influence of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH4)2S treated samples as compared to the untreated sample. After annealing, also the NH4OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO2/GaAs, in particular, with changes found in Ga 3d spectra.

KW - diffusion

KW - gallium arsenide

KW - gallium compounds

KW - III-V semiconductors

KW - indium compounds

KW - photoluminescence

KW - rapid thermal annealing

KW - semiconductor quantum wells

KW - spectral line shift

KW - surface treatment

KW - X-ray diffraction

KW - X-ray photoelectron spectra

U2 - 10.1063/1.3487784

DO - 10.1063/1.3487784

M3 - Article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111109