Abstract
Low-temperature bonding of Si wafers has been studied utilizing reactive ion etching-mode plasma activation. The hydrophilic Si and thermally oxidized Si wafers were exposed to N2, Ar, or O2 plasma prior to bonding in air or vacuum. After plasma treatment the wafers were cleaned in RCA-1 solution and/or deionized water.
Strong bonding was achieved at 200°C with all the investigated plasma gases, if proper bonding and cleaning procedures were used. Extended RCA-1 cleaning deteriorated the bond strength, but a short cleaning improved bonding. We found that the activation of the thermal oxide has a larger influence on the bond strength than the activation of the native oxide surface in Si/oxide wafer pairs.
We suggest that the plasma treatment induces a highly disordered surface structure, which enhances the diffusion of the water from the bonded interface. As a result of the plasma exposure the number of the surface OH groups is greatly increased enabling strong bonding at a low temperature
Strong bonding was achieved at 200°C with all the investigated plasma gases, if proper bonding and cleaning procedures were used. Extended RCA-1 cleaning deteriorated the bond strength, but a short cleaning improved bonding. We found that the activation of the thermal oxide has a larger influence on the bond strength than the activation of the native oxide surface in Si/oxide wafer pairs.
We suggest that the plasma treatment induces a highly disordered surface structure, which enhances the diffusion of the water from the bonded interface. As a result of the plasma exposure the number of the surface OH groups is greatly increased enabling strong bonding at a low temperature
| Original language | English |
|---|---|
| Pages (from-to) | G348-G351 |
| Journal | Journal of the Electrochemical Society |
| Volume | 49 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2002 |
| MoE publication type | A1 Journal article-refereed |