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Effects of plasma activation on hydrophilic bonding of Si and Si02
Tommi Suni
*
, Kimmo Henttinen
, Ilkka Suni
, J. Mäkinen
*
Corresponding author for this work
VTT Technical Research Centre of Finland
Okmetic Oyj
VTT (former employee or external)
Research output
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Article
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Scientific
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peer-review
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Keyphrases
Si Wafer
100%
Wafer
100%
Plasma Treatment
100%
Bond Strength
100%
Plasma Activation
100%
Hydrophilic Bonding
100%
Si02
100%
Low Temperature
50%
Plasma Exposure
50%
Surface Structure
50%
Reactive Ion Etching
50%
Thermal Oxide
50%
Deionized Water
50%
O2 Plasma
50%
Bonded Interface
50%
Bonding Process
50%
Native Oxide
50%
Plasma Gases
50%
Cleaning Methods
50%
Oxide Surfaces
50%
Low-temperature Bonding
50%
Ar Plasma
50%
Si Oxide
50%
Surface OH Groups
50%
Disordered Surface
50%
Etching Mode
50%
INIS
bonding
100%
plasma
100%
surfaces
42%
oxides
42%
cleaning
42%
water
28%
low temperature
28%
solutions
14%
interfaces
14%
diffusion
14%
air
14%
gases
14%
oxygen
14%
ions
14%
etching
14%
Material Science
Oxide Compound
100%
Oxide Surface
50%
Reactive Ion Etching
50%
Surface (Surface Science)
50%
Surface Structure
50%