We have studied effects of rapid thermal annealing on deep levels in n-type GaInP semiconductors grown on GaAs substrates by solid source molecular beam epitaxy. Deep level transient spectroscopic data reveal four partly resolved features, which are sensitive to heat treatment. Deep levels appearing at high activation energies, labeled T3 and T4, and lowenergy features T0 and T1 are reduced in intensity at high annealing temperatures, while a signal labeled T2 grows in intensity. T2 and T3 are most likely related to oxygen-derived complexes. T4 closely resembles a mid-gap level earlier observed for unintentionally doped GaInP, and probably originates from phosphorus-vacancy-related defects.
|9 - 11
|Number of pages
|Published - 2004
|MoE publication type
|A1 Journal article-refereed
|20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
Duration: 25 Aug 2003 → 27 Aug 2003