Effects of rapid thermal annealing on deep levels in n-GaInP

Antti Tukiainen, James Dekker, N. Xiang, M. Pessa

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

We have studied effects of rapid thermal annealing on deep levels in n-type GaInP semiconductors grown on GaAs substrates by solid source molecular beam epitaxy. Deep level transient spectroscopic data reveal four partly resolved features, which are sensitive to heat treatment. Deep levels appearing at high activation energies, labeled T3 and T4, and lowenergy features T0 and T1 are reduced in intensity at high annealing temperatures, while a signal labeled T2 grows in intensity. T2 and T3 are most likely related to oxygen-derived complexes. T4 closely resembles a mid-gap level earlier observed for unintentionally doped GaInP, and probably originates from phosphorus-vacancy-related defects.
Original languageEnglish
Pages (from-to)9 - 11
Number of pages3
JournalPhysica Scripta
VolumeT114
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed
Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
Duration: 25 Aug 200327 Aug 2003

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Annealing
annealing
Epitaxy
Phosphorus
Vacancy
Heat Treatment
Activation Energy
Gallium Arsenide
High Energy
Oxygen
Semiconductors
Defects
Likely
Substrate
n-type semiconductors
phosphorus
heat treatment
molecular beam epitaxy
activation energy
defects

Cite this

Tukiainen, Antti ; Dekker, James ; Xiang, N. ; Pessa, M. / Effects of rapid thermal annealing on deep levels in n-GaInP. In: Physica Scripta. 2004 ; Vol. T114. pp. 9 - 11.
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Effects of rapid thermal annealing on deep levels in n-GaInP. / Tukiainen, Antti; Dekker, James; Xiang, N.; Pessa, M.

In: Physica Scripta, Vol. T114, 2004, p. 9 - 11.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effects of rapid thermal annealing on deep levels in n-GaInP

AU - Tukiainen, Antti

AU - Dekker, James

AU - Xiang, N.

AU - Pessa, M.

PY - 2004

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N2 - We have studied effects of rapid thermal annealing on deep levels in n-type GaInP semiconductors grown on GaAs substrates by solid source molecular beam epitaxy. Deep level transient spectroscopic data reveal four partly resolved features, which are sensitive to heat treatment. Deep levels appearing at high activation energies, labeled T3 and T4, and lowenergy features T0 and T1 are reduced in intensity at high annealing temperatures, while a signal labeled T2 grows in intensity. T2 and T3 are most likely related to oxygen-derived complexes. T4 closely resembles a mid-gap level earlier observed for unintentionally doped GaInP, and probably originates from phosphorus-vacancy-related defects.

AB - We have studied effects of rapid thermal annealing on deep levels in n-type GaInP semiconductors grown on GaAs substrates by solid source molecular beam epitaxy. Deep level transient spectroscopic data reveal four partly resolved features, which are sensitive to heat treatment. Deep levels appearing at high activation energies, labeled T3 and T4, and lowenergy features T0 and T1 are reduced in intensity at high annealing temperatures, while a signal labeled T2 grows in intensity. T2 and T3 are most likely related to oxygen-derived complexes. T4 closely resembles a mid-gap level earlier observed for unintentionally doped GaInP, and probably originates from phosphorus-vacancy-related defects.

U2 - 10.1088/0031-8949/2004/T114/001

DO - 10.1088/0031-8949/2004/T114/001

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