Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

A. Savin, Mika Prunnila, Pekka Kivinen, Jukka Pekola, Jouni Ahopelto, A. Manninen

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.
Original languageEnglish
Pages (from-to)1471-1473
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number10
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

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cooling
silicon
electronics
insulators
electrons

Cite this

Savin, A. ; Prunnila, Mika ; Kivinen, Pekka ; Pekola, Jukka ; Ahopelto, Jouni ; Manninen, A. / Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling. In: Applied Physics Letters. 2001 ; Vol. 79, No. 10. pp. 1471-1473.
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Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling. / Savin, A.; Prunnila, Mika; Kivinen, Pekka; Pekola, Jukka; Ahopelto, Jouni; Manninen, A.

In: Applied Physics Letters, Vol. 79, No. 10, 2001, p. 1471-1473.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

AU - Savin, A.

AU - Prunnila, Mika

AU - Kivinen, Pekka

AU - Pekola, Jukka

AU - Ahopelto, Jouni

AU - Manninen, A.

PY - 2001

Y1 - 2001

N2 - Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.

AB - Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.

U2 - 10.1063/1.1399313

DO - 10.1063/1.1399313

M3 - Article

VL - 79

SP - 1471

EP - 1473

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -