Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

A. Savin, Mika Prunnila, Pekka Kivinen, Jukka Pekola, Jouni Ahopelto, A. Manninen

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    Abstract

    Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.
    Original languageEnglish
    Pages (from-to)1471-1473
    Number of pages3
    JournalApplied Physics Letters
    Volume79
    Issue number10
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

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