Abstract
The role of the finite collision duration in high electric fields is
examined for its effect on the scattering rate relevant in many
submicron and nanoscale semiconductor devices. Starting from a general
non-linear quantum transport equation, an approximate high field quantum
kinetic equation is derived, which can be viewed as the first step
towards a quantum Boltzmann equation. Based on this equation, the high
field scattering rate of electrons is calculated for GaAs in the case of
optical phonon scattering at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 373-376 |
| Journal | Physica Scripta |
| Volume | 61 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2000 |
| MoE publication type | A1 Journal article-refereed |