Electrical and structural characterization of electromigration in Al-Si/Ti multilayer interconnects

Manuela Finetti, Andrea Scorzoni, Aldo Armigliato, Antonio Garulli, Ilkka Suni

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

In this work we investigate the correlation between the resistance behaviour and the mass transport in narrow line interconnects with a laminated structure incorporating multiple layers of Ti in Al-Si. For comparison, homogeneous Al-Si films are also studied. The electromigration resistance is evaluated by applying a temperature-ramp resistance analysis (TRACE) at direct wafer level. The improved stability against electromigration in the laminated structures is related to the formation of a continuous barrier of the intermetallic compound TiAl3, preventing voids from propagating across the film.
Original languageEnglish
Title of host publicationESSDERC '87
Subtitle of host publication17th European Solid State Device Research Conference
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages361-364
ISBN (Print) 0-444-70477-9
Publication statusPublished - 1987
MoE publication typeA4 Article in a conference publication
Event17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy
Duration: 14 Sep 198717 Sep 1987

Conference

Conference17th European Solid State Device Research Conference, ESSDERC 1987
CountryItaly
CityBologna
Period14/09/8717/09/87

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  • Cite this

    Finetti, M., Scorzoni, A., Armigliato, A., Garulli, A., & Suni, I. (1987). Electrical and structural characterization of electromigration in Al-Si/Ti multilayer interconnects. In ESSDERC '87: 17th European Solid State Device Research Conference (pp. 361-364). IEEE Institute of Electrical and Electronic Engineers. https://ieeexplore.ieee.org/document/5436493