Electrical and structural characterization of electromigration in Al-Si/Ti multilayer interconnects

Manuela Finetti, Andrea Scorzoni, Aldo Armigliato, Antonio Garulli, Ilkka Suni

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

In this work we investigate the correlation between the resistance behaviour and the mass transport in narrow line interconnects with a laminated structure incorporating multiple layers of Ti in Al-Si. For comparison, homogeneous Al-Si films are also studied. The electromigration resistance is evaluated by applying a temperature-ramp resistance analysis (TRACE) at direct wafer level. The improved stability against electromigration in the laminated structures is related to the formation of a continuous barrier of the intermetallic compound TiAl3, preventing voids from propagating across the film.
Original languageEnglish
Title of host publicationESSDERC '87
Subtitle of host publication17th European Solid State Device Research Conference
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages361-364
ISBN (Print) 0-444-70477-9
Publication statusPublished - 1987
MoE publication typeA4 Article in a conference publication
Event17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy
Duration: 14 Sep 198717 Sep 1987

Conference

Conference17th European Solid State Device Research Conference, ESSDERC 1987
CountryItaly
CityBologna
Period14/09/8717/09/87

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electromigration
ramps
intermetallics
voids
wafers
temperature

Cite this

Finetti, M., Scorzoni, A., Armigliato, A., Garulli, A., & Suni, I. (1987). Electrical and structural characterization of electromigration in Al-Si/Ti multilayer interconnects. In ESSDERC '87: 17th European Solid State Device Research Conference (pp. 361-364). IEEE Institute of Electrical and Electronic Engineers .
Finetti, Manuela ; Scorzoni, Andrea ; Armigliato, Aldo ; Garulli, Antonio ; Suni, Ilkka. / Electrical and structural characterization of electromigration in Al-Si/Ti multilayer interconnects. ESSDERC '87: 17th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers , 1987. pp. 361-364
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abstract = "In this work we investigate the correlation between the resistance behaviour and the mass transport in narrow line interconnects with a laminated structure incorporating multiple layers of Ti in Al-Si. For comparison, homogeneous Al-Si films are also studied. The electromigration resistance is evaluated by applying a temperature-ramp resistance analysis (TRACE) at direct wafer level. The improved stability against electromigration in the laminated structures is related to the formation of a continuous barrier of the intermetallic compound TiAl3, preventing voids from propagating across the film.",
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Finetti, M, Scorzoni, A, Armigliato, A, Garulli, A & Suni, I 1987, Electrical and structural characterization of electromigration in Al-Si/Ti multilayer interconnects. in ESSDERC '87: 17th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers , pp. 361-364, 17th European Solid State Device Research Conference, ESSDERC 1987, Bologna, Italy, 14/09/87.

Electrical and structural characterization of electromigration in Al-Si/Ti multilayer interconnects. / Finetti, Manuela; Scorzoni, Andrea; Armigliato, Aldo; Garulli, Antonio; Suni, Ilkka.

ESSDERC '87: 17th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers , 1987. p. 361-364.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Electrical and structural characterization of electromigration in Al-Si/Ti multilayer interconnects

AU - Finetti, Manuela

AU - Scorzoni, Andrea

AU - Armigliato, Aldo

AU - Garulli, Antonio

AU - Suni, Ilkka

PY - 1987

Y1 - 1987

N2 - In this work we investigate the correlation between the resistance behaviour and the mass transport in narrow line interconnects with a laminated structure incorporating multiple layers of Ti in Al-Si. For comparison, homogeneous Al-Si films are also studied. The electromigration resistance is evaluated by applying a temperature-ramp resistance analysis (TRACE) at direct wafer level. The improved stability against electromigration in the laminated structures is related to the formation of a continuous barrier of the intermetallic compound TiAl3, preventing voids from propagating across the film.

AB - In this work we investigate the correlation between the resistance behaviour and the mass transport in narrow line interconnects with a laminated structure incorporating multiple layers of Ti in Al-Si. For comparison, homogeneous Al-Si films are also studied. The electromigration resistance is evaluated by applying a temperature-ramp resistance analysis (TRACE) at direct wafer level. The improved stability against electromigration in the laminated structures is related to the formation of a continuous barrier of the intermetallic compound TiAl3, preventing voids from propagating across the film.

M3 - Conference article in proceedings

SN - 0-444-70477-9

SP - 361

EP - 364

BT - ESSDERC '87

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Finetti M, Scorzoni A, Armigliato A, Garulli A, Suni I. Electrical and structural characterization of electromigration in Al-Si/Ti multilayer interconnects. In ESSDERC '87: 17th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers . 1987. p. 361-364