Abstract
In this work we investigate the correlation between the resistance behaviour and the mass transport in narrow line interconnects with a laminated structure incorporating multiple layers of Ti in Al-Si. For comparison, homogeneous Al-Si films are also studied. The electromigration resistance is evaluated by applying a temperature-ramp resistance analysis (TRACE) at direct wafer level. The improved stability against electromigration in the laminated structures is related to the formation of a continuous barrier of the intermetallic compound TiAl3, preventing voids from propagating across the film.
| Original language | English |
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| Title of host publication | ESSDERC '87 |
| Subtitle of host publication | 17th European Solid State Device Research Conference |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 361-364 |
| ISBN (Print) | 0-444-70477-9 |
| Publication status | Published - 1987 |
| MoE publication type | A4 Article in a conference publication |
| Event | 17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy Duration: 14 Sept 1987 → 17 Sept 1987 |
Conference
| Conference | 17th European Solid State Device Research Conference, ESSDERC 1987 |
|---|---|
| Country/Territory | Italy |
| City | Bologna |
| Period | 14/09/87 → 17/09/87 |