Electrical characterization of Langmuir-Blodgett films of poly(3-hexylthiophene) by utilizing rectifying contacts

Eero Punkka (Corresponding Author), Michael Rubner

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

Rectifying contacts have been utilized in the electrical characterization of Langmuir-Blodgett films of poly(3-hexylthiophene) mixed with stearic acid or 3-octadecanoylpyrrole. The current transport and the capacitive properties indicate that the Schottky barriers are thin and partially blocking because of relatively high dopant concentrations. Charge carriers can tunnel through the thin barriers making the transport bulk limited corresponding to Poole-Frenkel effect characteristics. Capacitance-voltage measurements reveal increasing dopant concentration with decreasing film thickness near the rectifying electrode. The frequency and thickness dependences of the capacitance and parallel resistance indicate that filament formation occurs during vacuum deposition of the top electrodes, and that these filaments extend deep into the polymer.
Original languageEnglish
Pages (from-to)117-125
JournalThin Solid Films
Volume213
Issue number1
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

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Langmuir Blodgett films
Langmuir-Blodgett films
filaments
capacitance
Doping (additives)
Vacuum deposition
Electrodes
Stearic acid
Capacitance measurement
vacuum deposition
electrodes
Voltage measurement
Charge carriers
electrical measurement
Film thickness
tunnels
charge carriers
Tunnels
Polymers
film thickness

Cite this

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title = "Electrical characterization of Langmuir-Blodgett films of poly(3-hexylthiophene) by utilizing rectifying contacts",
abstract = "Rectifying contacts have been utilized in the electrical characterization of Langmuir-Blodgett films of poly(3-hexylthiophene) mixed with stearic acid or 3-octadecanoylpyrrole. The current transport and the capacitive properties indicate that the Schottky barriers are thin and partially blocking because of relatively high dopant concentrations. Charge carriers can tunnel through the thin barriers making the transport bulk limited corresponding to Poole-Frenkel effect characteristics. Capacitance-voltage measurements reveal increasing dopant concentration with decreasing film thickness near the rectifying electrode. The frequency and thickness dependences of the capacitance and parallel resistance indicate that filament formation occurs during vacuum deposition of the top electrodes, and that these filaments extend deep into the polymer.",
author = "Eero Punkka and Michael Rubner",
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doi = "10.1016/0040-6090(92)90485-T",
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Electrical characterization of Langmuir-Blodgett films of poly(3-hexylthiophene) by utilizing rectifying contacts. / Punkka, Eero (Corresponding Author); Rubner, Michael.

In: Thin Solid Films, Vol. 213, No. 1, 1992, p. 117-125.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

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AU - Punkka, Eero

AU - Rubner, Michael

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PY - 1992

Y1 - 1992

N2 - Rectifying contacts have been utilized in the electrical characterization of Langmuir-Blodgett films of poly(3-hexylthiophene) mixed with stearic acid or 3-octadecanoylpyrrole. The current transport and the capacitive properties indicate that the Schottky barriers are thin and partially blocking because of relatively high dopant concentrations. Charge carriers can tunnel through the thin barriers making the transport bulk limited corresponding to Poole-Frenkel effect characteristics. Capacitance-voltage measurements reveal increasing dopant concentration with decreasing film thickness near the rectifying electrode. The frequency and thickness dependences of the capacitance and parallel resistance indicate that filament formation occurs during vacuum deposition of the top electrodes, and that these filaments extend deep into the polymer.

AB - Rectifying contacts have been utilized in the electrical characterization of Langmuir-Blodgett films of poly(3-hexylthiophene) mixed with stearic acid or 3-octadecanoylpyrrole. The current transport and the capacitive properties indicate that the Schottky barriers are thin and partially blocking because of relatively high dopant concentrations. Charge carriers can tunnel through the thin barriers making the transport bulk limited corresponding to Poole-Frenkel effect characteristics. Capacitance-voltage measurements reveal increasing dopant concentration with decreasing film thickness near the rectifying electrode. The frequency and thickness dependences of the capacitance and parallel resistance indicate that filament formation occurs during vacuum deposition of the top electrodes, and that these filaments extend deep into the polymer.

U2 - 10.1016/0040-6090(92)90485-T

DO - 10.1016/0040-6090(92)90485-T

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JF - Thin Solid Films

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