Electrical Low-Frequency 1/fγ Noise Due to Surface Diffusion of Scatterers on an Ultra-low-Noise Graphene Platform

Masahiro Kamada, Antti Laitinen, Weijun Zeng, Marco Will, Jayanta Sarkar, Kirsi Tappura, Heikki Seppä, Pertti Hakonen (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Low-frequency 1/f γ noise is ubiquitous, even in high-end electronic devices. Recently, it was found that adsorbed O2 molecules provide the dominant contribution to flux noise in superconducting quantum interference devices. To clarify the basic principles of such adsorbate noise, we have investigated low-frequency noise, while the mobility of surface adsorbates is varied by temperature. We measured low-frequency current noise in suspended monolayer graphene Corbino samples under the influence of adsorbed Ne atoms. Owing to the extremely small intrinsic noise of suspended graphene, we could resolve a combination of 1/f γ and Lorentzian noise induced by the presence of Ne. We find that the 1/f γ noise is caused by surface diffusion of Ne atoms and by temporary formation of few-Ne-atom clusters. Our results support the idea that clustering dynamics of defects is relevant for understanding of 1/f noise in metallic systems.

Original languageEnglish
Pages (from-to)7637-7643
Number of pages7
JournalNano Letters
Volume21
Issue number18
DOIs
Publication statusPublished - 22 Sep 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • 1/f noise
  • adsorption/desorption noise
  • graphene
  • neon
  • impurity clustering
  • diffusion
  • 1/ f noise

Fingerprint

Dive into the research topics of 'Electrical Low-Frequency 1/fγ Noise Due to Surface Diffusion of Scatterers on an Ultra-low-Noise Graphene Platform'. Together they form a unique fingerprint.

Cite this