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Keyphrases
Electrical Measurements
100%
Extraction Efficiency
100%
Internal Quantum Efficiency
100%
Light-emitting Diodes
100%
III-N
100%
Diode Structures
42%
Current Density
14%
Measure Data
14%
Room Temperature
14%
Radiative Recombination
14%
Quantum Efficiency
14%
Measurement Method
14%
Growth Parameters
14%
Structure Design
14%
Device Structure
14%
Shockley-Read-Hall Recombination
14%
External Quantum Efficiency
14%
Electrical Measurement Method
14%
Injection Current
14%
Optical Output Power
14%
III-nitrides
14%
Auger Parameter
14%
Low Temperature Measurements
14%
Self-growing
14%
Recombination Parameters
14%
INIS
efficiency
100%
extraction
100%
light emitting diodes
100%
quantum efficiency
100%
output
14%
comparative evaluations
14%
data
14%
design
14%
devices
14%
low temperature
14%
power
14%
growth
14%
current density
14%
injection
14%
nitrides
14%
temperature range 0273-0400 k
14%
recombination
14%
Engineering
Light-Emitting Diode
100%
Internal Quantum Efficiency
100%
Electrical Measurement
100%
Experimental Result
14%
Low-Temperature
14%
Measurement Data
14%
Conventional Method
14%
Growth Parameter
14%
Device Structure
14%
Shockley
14%
Current Injection
14%
External Quantum Efficiency
14%
Room Temperature
14%
Nitride
14%
Radiative Recombination
14%
Quantum Efficiency
14%