Electrical properties of silicided contacts

Manuela Finetti, Andrea Scorzoni, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)


The authors report values of contact resistivity for silicon/silicide interfaces, derived by applying two-dimensional simulation models to conventional test structures or by using self-aligned test structures. Results are presented for Pd2Si, TiSi2, CoSi2, NiSi and MoSi2 contacts on heavily doped silicon. It is found that values of rho //c in the range 5 multiplied by 10** minus **8-5 multiplied by 10** minus **7 ohm. cm**2 can be typically obtained in contacts on very highly doped substrates. Therefore rho //c does not appear as a limiting factor for the application of silicides in VLSI or in the next generation ULSI.
Original languageEnglish
Pages (from-to)99-102
JournalVide, les Couches Minces
Issue number236
Publication statusPublished - 1987
MoE publication typeA1 Journal article-refereed


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