Electrical properties of silicided contacts

Manuela Finetti, Andrea Scorzoni, Ilkka Suni

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Abstract

The authors report values of contact resistivity for silicon/silicide interfaces, derived by applying two-dimensional simulation models to conventional test structures or by using self-aligned test structures. Results are presented for Pd//2Si, TiSi//2, CoSi//2, NiSi and MoSi//2 contacts on heavily doped silicon. It is found that values of rho //c in the range 5 multiplied by 10** minus **8-5 multiplied by 10** minus **7 ohm. cm**2 can be typically obtained in contacts on very highly doped substrates. Therefore rho //c does not appear as a limiting factor for the application of silicides in VLSI or in the next generation ULSI.
Original languageEnglish
Pages (from-to)99-102
JournalVide, les Couches Minces
Volume42
Issue number236
Publication statusPublished - 1987
MoE publication typeA1 Journal article-refereed

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Finetti, M., Scorzoni, A., & Suni, I. (1987). Electrical properties of silicided contacts. Vide, les Couches Minces, 42(236), 99-102.