Electrical properties of silicided contacts

Manuela Finetti, Andrea Scorzoni, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

The authors report values of contact resistivity for silicon/silicide interfaces, derived by applying two-dimensional simulation models to conventional test structures or by using self-aligned test structures. Results are presented for Pd//2Si, TiSi//2, CoSi//2, NiSi and MoSi//2 contacts on heavily doped silicon. It is found that values of rho //c in the range 5 multiplied by 10** minus **8-5 multiplied by 10** minus **7 ohm. cm**2 can be typically obtained in contacts on very highly doped substrates. Therefore rho //c does not appear as a limiting factor for the application of silicides in VLSI or in the next generation ULSI.
Original languageEnglish
Pages (from-to)99-102
JournalVide, les Couches Minces
Volume42
Issue number236
Publication statusPublished - 1987
MoE publication typeA1 Journal article-refereed

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Silicon
Electric properties
electrical properties
Silicides
silicides
very large scale integration
silicon
electric contacts
electrical resistivity
Substrates
simulation

Cite this

Finetti, M., Scorzoni, A., & Suni, I. (1987). Electrical properties of silicided contacts. Vide, les Couches Minces, 42(236), 99-102.
Finetti, Manuela ; Scorzoni, Andrea ; Suni, Ilkka. / Electrical properties of silicided contacts. In: Vide, les Couches Minces. 1987 ; Vol. 42, No. 236. pp. 99-102.
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abstract = "The authors report values of contact resistivity for silicon/silicide interfaces, derived by applying two-dimensional simulation models to conventional test structures or by using self-aligned test structures. Results are presented for Pd//2Si, TiSi//2, CoSi//2, NiSi and MoSi//2 contacts on heavily doped silicon. It is found that values of rho //c in the range 5 multiplied by 10** minus **8-5 multiplied by 10** minus **7 ohm. cm**2 can be typically obtained in contacts on very highly doped substrates. Therefore rho //c does not appear as a limiting factor for the application of silicides in VLSI or in the next generation ULSI.",
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Finetti, M, Scorzoni, A & Suni, I 1987, 'Electrical properties of silicided contacts', Vide, les Couches Minces, vol. 42, no. 236, pp. 99-102.

Electrical properties of silicided contacts. / Finetti, Manuela; Scorzoni, Andrea; Suni, Ilkka.

In: Vide, les Couches Minces, Vol. 42, No. 236, 1987, p. 99-102.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Electrical properties of silicided contacts

AU - Finetti, Manuela

AU - Scorzoni, Andrea

AU - Suni, Ilkka

PY - 1987

Y1 - 1987

N2 - The authors report values of contact resistivity for silicon/silicide interfaces, derived by applying two-dimensional simulation models to conventional test structures or by using self-aligned test structures. Results are presented for Pd//2Si, TiSi//2, CoSi//2, NiSi and MoSi//2 contacts on heavily doped silicon. It is found that values of rho //c in the range 5 multiplied by 10** minus **8-5 multiplied by 10** minus **7 ohm. cm**2 can be typically obtained in contacts on very highly doped substrates. Therefore rho //c does not appear as a limiting factor for the application of silicides in VLSI or in the next generation ULSI.

AB - The authors report values of contact resistivity for silicon/silicide interfaces, derived by applying two-dimensional simulation models to conventional test structures or by using self-aligned test structures. Results are presented for Pd//2Si, TiSi//2, CoSi//2, NiSi and MoSi//2 contacts on heavily doped silicon. It is found that values of rho //c in the range 5 multiplied by 10** minus **8-5 multiplied by 10** minus **7 ohm. cm**2 can be typically obtained in contacts on very highly doped substrates. Therefore rho //c does not appear as a limiting factor for the application of silicides in VLSI or in the next generation ULSI.

M3 - Article

VL - 42

SP - 99

EP - 102

JO - La Gazette du Vide

JF - La Gazette du Vide

SN - 1638-802X

IS - 236

ER -

Finetti M, Scorzoni A, Suni I. Electrical properties of silicided contacts. Vide, les Couches Minces. 1987;42(236):99-102.