The authors report values of contact resistivity for silicon/silicide interfaces, derived by applying two-dimensional simulation models to conventional test structures or by using self-aligned test structures. Results are presented for Pd//2Si, TiSi//2, CoSi//2, NiSi and MoSi//2 contacts on heavily doped silicon. It is found that values of rho //c in the range 5 multiplied by 10** minus **8-5 multiplied by 10** minus **7 ohm. cm**2 can be typically obtained in contacts on very highly doped substrates. Therefore rho //c does not appear as a limiting factor for the application of silicides in VLSI or in the next generation ULSI.
|Journal||Vide, les Couches Minces|
|Publication status||Published - 1987|
|MoE publication type||A1 Journal article-refereed|