Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits

Alessandro Crippa*, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

107 Citations (Scopus)

Abstract

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g -matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.
Original languageEnglish
Article number137702
JournalPhysical Review Letters
Volume120
DOIs
Publication statusPublished - 30 Mar 2018
MoE publication typeA1 Journal article-refereed

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