Electrical transport and field-effect transistors using inkjet-printed SWCNT films having different functional side groups

E. Gracia-Espino; G. Sala; F. Pino; N. Halonen; Juho Luomahaara; J. Mäklin; G. Tóth; K. Kordás; H. Jantunen; M. Terrones; Panu Helistö; Heikki Seppä; P. M. Ajayan; R. Vajtai

doi:10.1021/nn1000723

Electrical transport and field-effect transistors using inkjet-printed SWCNT films having different functional side groups

E. Gracia-Espino, G. Sala, F. Pino, N. Halonen, Juho Luomahaara, J. Mäklin, G. Tóth, K. Kordás, H. Jantunen, M. Terrones, Panu Helistö, Heikki Seppä, P. M. Ajayan, R. Vajtai (Corresponding Author)

Research output: Contribution to journal › Article › Scientific › peer-review

81 Citations (Scopus)

Abstract

The electrical properties of random networks of single-wall carbon nanotubes (SWNTs) obtained by inkjet printing are studied. Water-based stable inks of functionalized SWNTs (carboxylic acid, amide, poly(ethylene glycol), and polyaminobenzene sulfonic acid) were prepared and applied to inkjet deposit microscopic patterns of nanotube films on lithographically defined silicon chips with a back-side gate arrangement. Source−drain transfer characteristics and gate-effect measurements confirm the important role of the chemical functional groups in the electrical behavior of carbon nanotube networks. Considerable nonlinear transport in conjunction with a high channel current on/off ratio of ∼70 was observed with poly(ethylene glycol)-functionalized nanotubes. The positive temperature coefficient of channel resistance shows the nonmetallic behavior of the inkjet-printed films. Other inkjet-printed field-effect transistors using carboxyl-functionalized nanotubes as source, drain, and gate electrodes, poly(ethylene glycol)-functionalized nanotubes as the channel, and poly(ethylene glycol) as the gate dielectric were also tested and characterized.

Original language	English
Pages (from-to)	3318-3324
Number of pages	7
Journal	ACS Nano
Volume	4
Issue number	6
DOIs	https://doi.org/10.1021/nn1000723
Publication status	Published - 2010
MoE publication type	A1 Journal article-refereed

Keywords

carbon nanotubes
inkjet printing
percolation threshold
nanotube network
Schottky barrier

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10.1021/nn1000723

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Gracia-Espino, E., Sala, G., Pino, F., Halonen, N., Luomahaara, J., Mäklin, J., Tóth, G., Kordás, K., Jantunen, H., Terrones, M., Helistö, P., Seppä, H., Ajayan, P. M., & Vajtai, R. (2010). Electrical transport and field-effect transistors using inkjet-printed SWCNT films having different functional side groups. ACS Nano, 4(6), 3318-3324. https://doi.org/10.1021/nn1000723

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title = "Electrical transport and field-effect transistors using inkjet-printed SWCNT films having different functional side groups",

abstract = "The electrical properties of random networks of single-wall carbon nanotubes (SWNTs) obtained by inkjet printing are studied. Water-based stable inks of functionalized SWNTs (carboxylic acid, amide, poly(ethylene glycol), and polyaminobenzene sulfonic acid) were prepared and applied to inkjet deposit microscopic patterns of nanotube films on lithographically defined silicon chips with a back-side gate arrangement. Source−drain transfer characteristics and gate-effect measurements confirm the important role of the chemical functional groups in the electrical behavior of carbon nanotube networks. Considerable nonlinear transport in conjunction with a high channel current on/off ratio of ∼70 was observed with poly(ethylene glycol)-functionalized nanotubes. The positive temperature coefficient of channel resistance shows the nonmetallic behavior of the inkjet-printed films. Other inkjet-printed field-effect transistors using carboxyl-functionalized nanotubes as source, drain, and gate electrodes, poly(ethylene glycol)-functionalized nanotubes as the channel, and poly(ethylene glycol) as the gate dielectric were also tested and characterized.",

keywords = "carbon nanotubes, inkjet printing, percolation threshold, nanotube network, Schottky barrier",

author = "E. Gracia-Espino and G. Sala and F. Pino and N. Halonen and Juho Luomahaara and J. M{\"a}klin and G. T{\'o}th and K. Kord{\'a}s and H. Jantunen and M. Terrones and Panu Helist{\"o} and Heikki Sepp{\"a} and Ajayan, {P. M.} and R. Vajtai",

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doi = "10.1021/nn1000723",

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volume = "4",

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journal = "ACS Nano",

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publisher = "American Chemical Society ACS",

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Gracia-Espino, E, Sala, G, Pino, F, Halonen, N, Luomahaara, J, Mäklin, J, Tóth, G, Kordás, K, Jantunen, H, Terrones, M, Helistö, P, Seppä, H, Ajayan, PM & Vajtai, R 2010, 'Electrical transport and field-effect transistors using inkjet-printed SWCNT films having different functional side groups', ACS Nano, vol. 4, no. 6, pp. 3318-3324. https://doi.org/10.1021/nn1000723

TY - JOUR

T1 - Electrical transport and field-effect transistors using inkjet-printed SWCNT films having different functional side groups

AU - Gracia-Espino, E.

AU - Sala, G.

AU - Pino, F.

AU - Halonen, N.

AU - Luomahaara, Juho

AU - Mäklin, J.

AU - Tóth, G.

AU - Kordás, K.

AU - Jantunen, H.

AU - Terrones, M.

AU - Helistö, Panu

AU - Seppä, Heikki

AU - Ajayan, P. M.

AU - Vajtai, R.

PY - 2010

Y1 - 2010

N2 - The electrical properties of random networks of single-wall carbon nanotubes (SWNTs) obtained by inkjet printing are studied. Water-based stable inks of functionalized SWNTs (carboxylic acid, amide, poly(ethylene glycol), and polyaminobenzene sulfonic acid) were prepared and applied to inkjet deposit microscopic patterns of nanotube films on lithographically defined silicon chips with a back-side gate arrangement. Source−drain transfer characteristics and gate-effect measurements confirm the important role of the chemical functional groups in the electrical behavior of carbon nanotube networks. Considerable nonlinear transport in conjunction with a high channel current on/off ratio of ∼70 was observed with poly(ethylene glycol)-functionalized nanotubes. The positive temperature coefficient of channel resistance shows the nonmetallic behavior of the inkjet-printed films. Other inkjet-printed field-effect transistors using carboxyl-functionalized nanotubes as source, drain, and gate electrodes, poly(ethylene glycol)-functionalized nanotubes as the channel, and poly(ethylene glycol) as the gate dielectric were also tested and characterized.

AB - The electrical properties of random networks of single-wall carbon nanotubes (SWNTs) obtained by inkjet printing are studied. Water-based stable inks of functionalized SWNTs (carboxylic acid, amide, poly(ethylene glycol), and polyaminobenzene sulfonic acid) were prepared and applied to inkjet deposit microscopic patterns of nanotube films on lithographically defined silicon chips with a back-side gate arrangement. Source−drain transfer characteristics and gate-effect measurements confirm the important role of the chemical functional groups in the electrical behavior of carbon nanotube networks. Considerable nonlinear transport in conjunction with a high channel current on/off ratio of ∼70 was observed with poly(ethylene glycol)-functionalized nanotubes. The positive temperature coefficient of channel resistance shows the nonmetallic behavior of the inkjet-printed films. Other inkjet-printed field-effect transistors using carboxyl-functionalized nanotubes as source, drain, and gate electrodes, poly(ethylene glycol)-functionalized nanotubes as the channel, and poly(ethylene glycol) as the gate dielectric were also tested and characterized.

KW - carbon nanotubes

KW - inkjet printing

KW - percolation threshold

KW - nanotube network

KW - Schottky barrier

U2 - 10.1021/nn1000723

DO - 10.1021/nn1000723

M3 - Article

SN - 1936-0851

VL - 4

SP - 3318

EP - 3324

JO - ACS Nano

JF - ACS Nano

IS - 6

ER -

Electrical transport and field-effect transistors using inkjet-printed SWCNT films having different functional side groups

Abstract

Keywords

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