Electrical transport in microdevice chain

Juha Sinkkonen, Simo Eränen

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

A simple transport theory of a one-dimensional chain of small devices is presented. The chain is comprised of potential barriers connected by short conductors. Electrical transport through the barriers is described in terms of the quantum reflection and transmission coefficients. The conductors, which are longer than the de Broglie wavelength but eventually shorter than the mean tree path, are discussed within the Boltzmann transport theory. By fitting the solutions of the Boltzmann equation with the boundary conditions imposed by reflection and transmission at barriers a complete solution for the chain can be obtained. As an application, the two-barrier structure is studied in detail. As an function of the conductor length the current shows interference type resonances associated with scattering damped multiple reflections. The properties of the ballistic transistor are determined from the model.
Original languageEnglish
Pages (from-to)89-94
JournalSuperlattices and Microstructures
Volume3
Issue number1
DOIs
Publication statusPublished - 1987
MoE publication typeA1 Journal article-refereed

Fingerprint

conductors
transport theory
Boltzmann equation
Multiple scattering
de Broglie wavelengths
Ballistics
Transistors
Boundary conditions
ballistics
Wavelength
transistors
boundary conditions
reflectance
interference
coefficients
scattering

Cite this

Sinkkonen, Juha ; Eränen, Simo. / Electrical transport in microdevice chain. In: Superlattices and Microstructures. 1987 ; Vol. 3, No. 1. pp. 89-94.
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Electrical transport in microdevice chain. / Sinkkonen, Juha; Eränen, Simo.

In: Superlattices and Microstructures, Vol. 3, No. 1, 1987, p. 89-94.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Eränen, Simo

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