Electrochemical quartz crystal microbalance study of the electrodeposition mechanisms of CuInSe2 thin films

Marianna Kemell, Heini Saloniemi, Mikko Ritala, Markku Leskelä

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21 Citations (Scopus)

Abstract

Electrodeposition mechanisms of CuInSe2 thin films from SCN− baths were studied by cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM). The formation of CuInSe2 was confirmed to proceed via the induced codeposition mechanism at more positive potentials than where Cu+ or In3+ alone are reduced. The reaction probably proceeds via Cu2−xSe formation because no InySe compounds could be deposited at the potential range where CuInSe2 formation was observed. The slope of the Δf vs. ΔQ plot corresponding to the CuInSe2 formation decreased during the cyclic voltammogram until it settled to a constant value which suggests that the compound formation begins on the previously formed Se film and that the deposition mechanism changes during the cyclic voltammogram when the Se film becomes covered with the compound. A wide potential range was observed where the slope of the Δf vs. ΔQ plot was constant. Film deposition at constant potentials also yielded essentially equal slopes. 
Original languageEnglish
Pages (from-to)C110-C118
Number of pages8
JournalJournal of the Electrochemical Society
Volume148
Issue number2
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

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Quartz crystal microbalances
Electrodeposition
Thin films
Cyclic voltammetry

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@article{7a6da737d8754993a4a82b69b159f315,
title = "Electrochemical quartz crystal microbalance study of the electrodeposition mechanisms of CuInSe2 thin films",
abstract = "Electrodeposition mechanisms of CuInSe2 thin films from SCN− baths were studied by cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM). The formation of CuInSe2 was confirmed to proceed via the induced codeposition mechanism at more positive potentials than where Cu+ or In3+ alone are reduced. The reaction probably proceeds via Cu2−xSe formation because no InySe compounds could be deposited at the potential range where CuInSe2 formation was observed. The slope of the Δf vs. ΔQ plot corresponding to the CuInSe2 formation decreased during the cyclic voltammogram until it settled to a constant value which suggests that the compound formation begins on the previously formed Se film and that the deposition mechanism changes during the cyclic voltammogram when the Se film becomes covered with the compound. A wide potential range was observed where the slope of the Δf vs. ΔQ plot was constant. Film deposition at constant potentials also yielded essentially equal slopes. ",
author = "Marianna Kemell and Heini Saloniemi and Mikko Ritala and Markku Leskel{\"a}",
year = "2001",
doi = "10.1149/1.1342177",
language = "English",
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pages = "C110--C118",
journal = "Journal of the Electrochemical Society",
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Electrochemical quartz crystal microbalance study of the electrodeposition mechanisms of CuInSe2 thin films. / Kemell, Marianna; Saloniemi, Heini; Ritala, Mikko; Leskelä, Markku.

In: Journal of the Electrochemical Society, Vol. 148, No. 2, 2001, p. C110-C118.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Electrochemical quartz crystal microbalance study of the electrodeposition mechanisms of CuInSe2 thin films

AU - Kemell, Marianna

AU - Saloniemi, Heini

AU - Ritala, Mikko

AU - Leskelä, Markku

PY - 2001

Y1 - 2001

N2 - Electrodeposition mechanisms of CuInSe2 thin films from SCN− baths were studied by cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM). The formation of CuInSe2 was confirmed to proceed via the induced codeposition mechanism at more positive potentials than where Cu+ or In3+ alone are reduced. The reaction probably proceeds via Cu2−xSe formation because no InySe compounds could be deposited at the potential range where CuInSe2 formation was observed. The slope of the Δf vs. ΔQ plot corresponding to the CuInSe2 formation decreased during the cyclic voltammogram until it settled to a constant value which suggests that the compound formation begins on the previously formed Se film and that the deposition mechanism changes during the cyclic voltammogram when the Se film becomes covered with the compound. A wide potential range was observed where the slope of the Δf vs. ΔQ plot was constant. Film deposition at constant potentials also yielded essentially equal slopes. 

AB - Electrodeposition mechanisms of CuInSe2 thin films from SCN− baths were studied by cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM). The formation of CuInSe2 was confirmed to proceed via the induced codeposition mechanism at more positive potentials than where Cu+ or In3+ alone are reduced. The reaction probably proceeds via Cu2−xSe formation because no InySe compounds could be deposited at the potential range where CuInSe2 formation was observed. The slope of the Δf vs. ΔQ plot corresponding to the CuInSe2 formation decreased during the cyclic voltammogram until it settled to a constant value which suggests that the compound formation begins on the previously formed Se film and that the deposition mechanism changes during the cyclic voltammogram when the Se film becomes covered with the compound. A wide potential range was observed where the slope of the Δf vs. ΔQ plot was constant. Film deposition at constant potentials also yielded essentially equal slopes. 

U2 - 10.1149/1.1342177

DO - 10.1149/1.1342177

M3 - Article

VL - 148

SP - C110-C118

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 2

ER -