Electrode Dependence of Tunneling Electroresistance and Switching Stability in Organic Ferroelectric P(VDF-TrFE)-Based Tunnel Junctions

Sayani Majumdar, Binbin Chen, Qi Hang Qin, Himadri S. Majumdar, Sebastiaan van Dijken

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)

    Abstract

    Ferroelectric tunnel junctions (FTJs) are promising candidates for nonvolatile memories and memristor-based computing circuits. Thus far, most research has focused on FTJs with a perovskite oxide ferroelectric tunnel barrier. As the need for high-temperature epitaxial film growth challenges the technological application of such inorganic junctions, more easily processable organic ferroelectrics can serve as alternative if large tunneling electroresistance (TER) and good switching durability would persist. This study reports on the performance of FTJs with a spin-coated ferroelectric P(VDF-TrFE) copolymer tunnel barrier. The use of three different bottom electrodes, indium tin oxide (ITO), La0.67Sr0.33MnO3, (LSMO), and Nb-doped SrTiO3 (STO) are compared and it is shown that the polarity and magnitude of the TER effect depend on their conductivity. The largest TER of up to 107% at room temperature is measured on FTJs with a semiconducting Nb-doped STO electrode. This large switching effect is attributed to the formation of an extra barrier over the space charge region in the substrate. The organic FTJs exhibit good resistance retention and switching endurance up to 380 K, which is just below the ferroelectric Curie temperature of the P(VDF-TrFE) barrier.

    Original languageEnglish
    Article number1703273
    JournalAdvanced Functional Materials
    Volume28
    Issue number15
    DOIs
    Publication statusPublished - 2018
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Tunnel junctions
    tunnel junctions
    Ferroelectric materials
    Electrodes
    electrodes
    tunnels
    endurance
    durability
    indium oxides
    Tunnels
    tin oxides
    Durability
    Curie temperature
    space charge
    copolymers
    polarity
    Memristors
    Epitaxial films
    conductivity
    Film growth

    Keywords

    • Ferroelectric tunnel junctions
    • Molecular electronics
    • Resistive switching

    Cite this

    @article{651af794b5f34dec85043f892316db62,
    title = "Electrode Dependence of Tunneling Electroresistance and Switching Stability in Organic Ferroelectric P(VDF-TrFE)-Based Tunnel Junctions",
    abstract = "Ferroelectric tunnel junctions (FTJs) are promising candidates for nonvolatile memories and memristor-based computing circuits. Thus far, most research has focused on FTJs with a perovskite oxide ferroelectric tunnel barrier. As the need for high-temperature epitaxial film growth challenges the technological application of such inorganic junctions, more easily processable organic ferroelectrics can serve as alternative if large tunneling electroresistance (TER) and good switching durability would persist. This study reports on the performance of FTJs with a spin-coated ferroelectric P(VDF-TrFE) copolymer tunnel barrier. The use of three different bottom electrodes, indium tin oxide (ITO), La0.67Sr0.33MnO3, (LSMO), and Nb-doped SrTiO3 (STO) are compared and it is shown that the polarity and magnitude of the TER effect depend on their conductivity. The largest TER of up to 107{\%} at room temperature is measured on FTJs with a semiconducting Nb-doped STO electrode. This large switching effect is attributed to the formation of an extra barrier over the space charge region in the substrate. The organic FTJs exhibit good resistance retention and switching endurance up to 380 K, which is just below the ferroelectric Curie temperature of the P(VDF-TrFE) barrier.",
    keywords = "Ferroelectric tunnel junctions, Molecular electronics, Resistive switching",
    author = "Sayani Majumdar and Binbin Chen and Qin, {Qi Hang} and Majumdar, {Himadri S.} and {van Dijken}, Sebastiaan",
    year = "2018",
    doi = "10.1002/adfm.201703273",
    language = "English",
    volume = "28",
    journal = "Advanced Functional Materials",
    issn = "1616-301X",
    publisher = "Wiley",
    number = "15",

    }

    Electrode Dependence of Tunneling Electroresistance and Switching Stability in Organic Ferroelectric P(VDF-TrFE)-Based Tunnel Junctions. / Majumdar, Sayani; Chen, Binbin; Qin, Qi Hang; Majumdar, Himadri S.; van Dijken, Sebastiaan.

    In: Advanced Functional Materials, Vol. 28, No. 15, 1703273, 2018.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Electrode Dependence of Tunneling Electroresistance and Switching Stability in Organic Ferroelectric P(VDF-TrFE)-Based Tunnel Junctions

    AU - Majumdar, Sayani

    AU - Chen, Binbin

    AU - Qin, Qi Hang

    AU - Majumdar, Himadri S.

    AU - van Dijken, Sebastiaan

    PY - 2018

    Y1 - 2018

    N2 - Ferroelectric tunnel junctions (FTJs) are promising candidates for nonvolatile memories and memristor-based computing circuits. Thus far, most research has focused on FTJs with a perovskite oxide ferroelectric tunnel barrier. As the need for high-temperature epitaxial film growth challenges the technological application of such inorganic junctions, more easily processable organic ferroelectrics can serve as alternative if large tunneling electroresistance (TER) and good switching durability would persist. This study reports on the performance of FTJs with a spin-coated ferroelectric P(VDF-TrFE) copolymer tunnel barrier. The use of three different bottom electrodes, indium tin oxide (ITO), La0.67Sr0.33MnO3, (LSMO), and Nb-doped SrTiO3 (STO) are compared and it is shown that the polarity and magnitude of the TER effect depend on their conductivity. The largest TER of up to 107% at room temperature is measured on FTJs with a semiconducting Nb-doped STO electrode. This large switching effect is attributed to the formation of an extra barrier over the space charge region in the substrate. The organic FTJs exhibit good resistance retention and switching endurance up to 380 K, which is just below the ferroelectric Curie temperature of the P(VDF-TrFE) barrier.

    AB - Ferroelectric tunnel junctions (FTJs) are promising candidates for nonvolatile memories and memristor-based computing circuits. Thus far, most research has focused on FTJs with a perovskite oxide ferroelectric tunnel barrier. As the need for high-temperature epitaxial film growth challenges the technological application of such inorganic junctions, more easily processable organic ferroelectrics can serve as alternative if large tunneling electroresistance (TER) and good switching durability would persist. This study reports on the performance of FTJs with a spin-coated ferroelectric P(VDF-TrFE) copolymer tunnel barrier. The use of three different bottom electrodes, indium tin oxide (ITO), La0.67Sr0.33MnO3, (LSMO), and Nb-doped SrTiO3 (STO) are compared and it is shown that the polarity and magnitude of the TER effect depend on their conductivity. The largest TER of up to 107% at room temperature is measured on FTJs with a semiconducting Nb-doped STO electrode. This large switching effect is attributed to the formation of an extra barrier over the space charge region in the substrate. The organic FTJs exhibit good resistance retention and switching endurance up to 380 K, which is just below the ferroelectric Curie temperature of the P(VDF-TrFE) barrier.

    KW - Ferroelectric tunnel junctions

    KW - Molecular electronics

    KW - Resistive switching

    UR - http://www.scopus.com/inward/record.url?scp=85035190666&partnerID=8YFLogxK

    U2 - 10.1002/adfm.201703273

    DO - 10.1002/adfm.201703273

    M3 - Article

    AN - SCOPUS:85035190666

    VL - 28

    JO - Advanced Functional Materials

    JF - Advanced Functional Materials

    SN - 1616-301X

    IS - 15

    M1 - 1703273

    ER -