Keyphrases
Tunnel Junction
100%
Tunneling Electroresistance
100%
Switching Stability
100%
P(VDF-TrFE)
100%
Ferroelectric Tunnel Junction
100%
Organic Ferroelectrics
100%
Tunnel Barrier
40%
Nb-doped SrTiO3
40%
High Temperature
20%
Room Temperature
20%
Technological Applications
20%
Growth Problems
20%
Bottom Electrode
20%
Curie Temperature
20%
Indium Tin Oxide
20%
Perovskite Oxide
20%
Memory-based
20%
Switching Effect
20%
Switching Durability
20%
Space Charge Region
20%
Non-volatile Memory
20%
Volatile Memristor
20%
Memristor-based
20%
La0.67Ca0.33MnO3
20%
Epitaxial Film Growth
20%
INIS
stability
100%
tunnel junctions
100%
tunneling
100%
electrodes
100%
ferroelectric materials
100%
barriers
40%
doped materials
20%
durability
10%
performance
10%
comparative evaluations
10%
applications
10%
copolymers
10%
substrates
10%
oxides
10%
growth
10%
high temperature
10%
retention
10%
films
10%
perovskite
10%
space charge
10%
temperature range 0273-0400 k
10%
spin
10%
junctions
10%
tin oxides
10%
indium
10%
epitaxy
10%
curie temperature
10%
Material Science
Ferroelectric Material
100%
Copolymer
10%
Curie Temperature
10%
Electronic Circuit
10%
Film Growth
10%
Indium Tin Oxide
10%
Oxide Compound
10%