Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy

A. Salokatve; Mika Toivonen; H. Asonen; Markus Pessa; Jari Likonen

doi:10.1109/ICIPRM.1996.491941

Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy

A. Salokatve, Mika Toivonen, H. Asonen, Markus Pessa, Jari Likonen

Tampere University of Technology (TUT)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We have studied carbon doping of GaInAs grown by gas-source molecular beam epitaxy. Graphite was used as a source material for carbon evaporation. GaInAs was studied due to its importance as a base layer in InP-based heterojunction bipolar transistors. We show that useful p-type acceptor concentrations can be achieved by evaporation from graphite source for GaInAs grown by gas-source molecular beam epitaxy. Secondary ion mass spectroscopy and Van der Pauw Hall measurements were used to characterise the carbon and net acceptor concentrations of the GaInAs layers. The effect of rapid thermal annealing on acceptor concentrations and Hall mobilities was also studied.

Original language	English
Title of host publication	Eighth International Conference on Indium Phosphide and Related Materials
Place of Publication	Piscataway
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	86-88
ISBN (Print)	978-0-7803-3283-6
DOIs	https://doi.org/10.1109/ICIPRM.1996.491941
Publication status	Published - 1996
MoE publication type	A4 Article in a conference publication
Event	8th International Conference on Indium Phosphide and Related Materials - Schwäbisch Gmünd, Germany Duration: 21 Apr 1996 → 25 Apr 1996

Conference

Conference	8th International Conference on Indium Phosphide and Related Materials
Country/Territory	Germany
City	Schwäbisch Gmünd
Period	21/04/96 → 25/04/96

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10.1109/ICIPRM.1996.491941

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@inproceedings{40c14cfa35074ae9b036c9332d453ca5,

title = "Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy",

abstract = "We have studied carbon doping of GaInAs grown by gas-source molecular beam epitaxy. Graphite was used as a source material for carbon evaporation. GaInAs was studied due to its importance as a base layer in InP-based heterojunction bipolar transistors. We show that useful p-type acceptor concentrations can be achieved by evaporation from graphite source for GaInAs grown by gas-source molecular beam epitaxy. Secondary ion mass spectroscopy and Van der Pauw Hall measurements were used to characterise the carbon and net acceptor concentrations of the GaInAs layers. The effect of rapid thermal annealing on acceptor concentrations and Hall mobilities was also studied.",

author = "A. Salokatve and Mika Toivonen and H. Asonen and Markus Pessa and Jari Likonen",

note = "Project code: KET4134; 8th International Conference on Indium Phosphide and Related Materials ; Conference date: 21-04-1996 Through 25-04-1996",

year = "1996",

doi = "10.1109/ICIPRM.1996.491941",

language = "English",

isbn = "978-0-7803-3283-6",

pages = "86--88",

booktitle = "Eighth International Conference on Indium Phosphide and Related Materials",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Salokatve, A, Toivonen, M, Asonen, H, Pessa, M & Likonen, J 1996, Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy. in Eighth International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers, Piscataway, pp. 86-88, 8th International Conference on Indium Phosphide and Related Materials, Schwäbisch Gmünd, Baden-Württemberg, Germany, 21/04/96. https://doi.org/10.1109/ICIPRM.1996.491941

Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy. / Salokatve, A.; Toivonen, Mika; Asonen, H. et al.
Eighth International Conference on Indium Phosphide and Related Materials. Piscataway: IEEE Institute of Electrical and Electronic Engineers, 1996. p. 86-88.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy

AU - Salokatve, A.

AU - Toivonen, Mika

AU - Asonen, H.

AU - Pessa, Markus

AU - Likonen, Jari

N1 - Project code: KET4134

PY - 1996

Y1 - 1996

N2 - We have studied carbon doping of GaInAs grown by gas-source molecular beam epitaxy. Graphite was used as a source material for carbon evaporation. GaInAs was studied due to its importance as a base layer in InP-based heterojunction bipolar transistors. We show that useful p-type acceptor concentrations can be achieved by evaporation from graphite source for GaInAs grown by gas-source molecular beam epitaxy. Secondary ion mass spectroscopy and Van der Pauw Hall measurements were used to characterise the carbon and net acceptor concentrations of the GaInAs layers. The effect of rapid thermal annealing on acceptor concentrations and Hall mobilities was also studied.

AB - We have studied carbon doping of GaInAs grown by gas-source molecular beam epitaxy. Graphite was used as a source material for carbon evaporation. GaInAs was studied due to its importance as a base layer in InP-based heterojunction bipolar transistors. We show that useful p-type acceptor concentrations can be achieved by evaporation from graphite source for GaInAs grown by gas-source molecular beam epitaxy. Secondary ion mass spectroscopy and Van der Pauw Hall measurements were used to characterise the carbon and net acceptor concentrations of the GaInAs layers. The effect of rapid thermal annealing on acceptor concentrations and Hall mobilities was also studied.

U2 - 10.1109/ICIPRM.1996.491941

DO - 10.1109/ICIPRM.1996.491941

M3 - Conference article in proceedings

SN - 978-0-7803-3283-6

SP - 86

EP - 88

BT - Eighth International Conference on Indium Phosphide and Related Materials

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Piscataway

T2 - 8th International Conference on Indium Phosphide and Related Materials

Y2 - 21 April 1996 through 25 April 1996

ER -

Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy

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