Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy

A. Salokatve, Mika Toivonen, H. Asonen, Markus Pessa, Jari Likonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    We have studied carbon doping of GaInAs grown by gas-source molecular beam epitaxy. Graphite was used as a source material for carbon evaporation. GaInAs was studied due to its importance as a base layer in InP-based heterojunction bipolar transistors. We show that useful p-type acceptor concentrations can be achieved by evaporation from graphite source for GaInAs grown by gas-source molecular beam epitaxy. Secondary ion mass spectroscopy and Van der Pauw Hall measurements were used to characterise the carbon and net acceptor concentrations of the GaInAs layers. The effect of rapid thermal annealing on acceptor concentrations and Hall mobilities was also studied.
    Original languageEnglish
    Title of host publicationEighth International Conference on Indium Phosphide and Related Materials
    Place of PublicationPiscataway
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages86-88
    ISBN (Print)978-0-7803-3283-6
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA4 Article in a conference publication
    Event8th International Conference on Indium Phosphide and Related Materials - Schwäbisch Gmünd, Germany
    Duration: 21 Apr 199625 Apr 1996

    Conference

    Conference8th International Conference on Indium Phosphide and Related Materials
    CountryGermany
    CitySchwäbisch Gmünd
    Period21/04/9625/04/96

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  • Cite this

    Salokatve, A., Toivonen, M., Asonen, H., Pessa, M., & Likonen, J. (1996). Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy. In Eighth International Conference on Indium Phosphide and Related Materials (pp. 86-88). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ICIPRM.1996.491941