Electron-hole bi-layers in ultra-thin SOI-devices

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

We have investigated the properties of an electron-hole bi-layer in a double gate SOIFET with a 22 nm-thick channel. We have measured the drag resistance as a function of temperature and carrier density. We have also observed activated hysteretic behaviour in electron and hole currents in certain temperature and carrier density ranges.
Original languageEnglish
Title of host publicationEUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits
Subtitle of host publicationConference Proceedings
PublisherUniversity of Granada
Pages123-124
Publication statusPublished - 2011
MoE publication typeNot Eligible
Event7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011 - Granada, Spain
Duration: 17 Jan 201119 Jan 2011

Conference

Conference7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011
Abbreviated titleEUROSOI 2011
CountrySpain
CityGranada
Period17/01/1119/01/11

Fingerprint

SOI (semiconductors)
drag
temperature
electrons

Cite this

Laakso, S., Prunnila, M., & Ahopelto, J. (2011). Electron-hole bi-layers in ultra-thin SOI-devices. In EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits: Conference Proceedings (pp. 123-124). University of Granada.
Laakso, Sampo ; Prunnila, Mika ; Ahopelto, Jouni. / Electron-hole bi-layers in ultra-thin SOI-devices. EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits: Conference Proceedings. University of Granada, 2011. pp. 123-124
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title = "Electron-hole bi-layers in ultra-thin SOI-devices",
abstract = "We have investigated the properties of an electron-hole bi-layer in a double gate SOIFET with a 22 nm-thick channel. We have measured the drag resistance as a function of temperature and carrier density. We have also observed activated hysteretic behaviour in electron and hole currents in certain temperature and carrier density ranges.",
author = "Sampo Laakso and Mika Prunnila and Jouni Ahopelto",
year = "2011",
language = "English",
pages = "123--124",
booktitle = "EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits",
publisher = "University of Granada",
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Laakso, S, Prunnila, M & Ahopelto, J 2011, Electron-hole bi-layers in ultra-thin SOI-devices. in EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits: Conference Proceedings. University of Granada, pp. 123-124, 7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011, Granada, Spain, 17/01/11.

Electron-hole bi-layers in ultra-thin SOI-devices. / Laakso, Sampo; Prunnila, Mika; Ahopelto, Jouni.

EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits: Conference Proceedings. University of Granada, 2011. p. 123-124.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AB - We have investigated the properties of an electron-hole bi-layer in a double gate SOIFET with a 22 nm-thick channel. We have measured the drag resistance as a function of temperature and carrier density. We have also observed activated hysteretic behaviour in electron and hole currents in certain temperature and carrier density ranges.

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BT - EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits

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Laakso S, Prunnila M, Ahopelto J. Electron-hole bi-layers in ultra-thin SOI-devices. In EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits: Conference Proceedings. University of Granada. 2011. p. 123-124