Abstract
We have investigated the properties of an electron-hole bi-layer in a double gate SOIFET with a 22 nm-thick channel. We have measured the drag resistance as a function of temperature and carrier density. We have also observed activated hysteretic behaviour in electron and hole currents in certain temperature and carrier density ranges.
| Original language | English |
|---|---|
| Title of host publication | EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits |
| Subtitle of host publication | Conference Proceedings |
| Publisher | University of Granada |
| Pages | 123-124 |
| Publication status | Published - 2011 |
| MoE publication type | Not Eligible |
| Event | 7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011 - Granada, Spain Duration: 17 Jan 2011 → 19 Jan 2011 |
Conference
| Conference | 7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011 |
|---|---|
| Abbreviated title | EUROSOI 2011 |
| Country/Territory | Spain |
| City | Granada |
| Period | 17/01/11 → 19/01/11 |