Electron-hole bi-layers in ultra-thin SOI-devices

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    We have investigated the properties of an electron-hole bi-layer in a double gate SOIFET with a 22 nm-thick channel. We have measured the drag resistance as a function of temperature and carrier density. We have also observed activated hysteretic behaviour in electron and hole currents in certain temperature and carrier density ranges.
    Original languageEnglish
    Title of host publicationEUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits
    Subtitle of host publicationConference Proceedings
    PublisherUniversity of Granada
    Pages123-124
    Publication statusPublished - 2011
    MoE publication typeNot Eligible
    Event7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011 - Granada, Spain
    Duration: 17 Jan 201119 Jan 2011

    Conference

    Conference7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011
    Abbreviated titleEUROSOI 2011
    CountrySpain
    CityGranada
    Period17/01/1119/01/11

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  • Cite this

    Laakso, S., Prunnila, M., & Ahopelto, J. (2011). Electron-hole bi-layers in ultra-thin SOI-devices. In EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits: Conference Proceedings (pp. 123-124). University of Granada. https://cordis.europa.eu/docs/projects/cnect/3/216373/080/deliverables/001-EUROSOID410.pdf