Electron-hole bi-layers in ultra-thin SOI-devices

Sampo Laakso; Mika Prunnila; Jouni Ahopelto

Electron-hole bi-layers in ultra-thin SOI-devices

Sampo Laakso
, Mika Prunnila
, Jouni Ahopelto

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We have investigated the properties of an electron-hole bi-layer in a double gate SOIFET with a 22 nm-thick channel. We have measured the drag resistance as a function of temperature and carrier density. We have also observed activated hysteretic behaviour in electron and hole currents in certain temperature and carrier density ranges.

Original language	English
Title of host publication	EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits
Subtitle of host publication	Conference Proceedings
Publisher	University of Granada
Pages	123-124
Publication status	Published - 2011
MoE publication type	Not Eligible
Event	7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011 - Granada, Spain Duration: 17 Jan 2011 → 19 Jan 2011

Conference

Conference	7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011
Abbreviated title	EUROSOI 2011
Country/Territory	Spain
City	Granada
Period	17/01/11 → 19/01/11

Access to Document

https://cordis.europa.eu/docs/projects/cnect/3/216373/080/deliverables/001-EUROSOID410.pdf

Cite this

@inproceedings{7292ba911c654c93ae43de704352c3ab,

title = "Electron-hole bi-layers in ultra-thin SOI-devices",

abstract = "We have investigated the properties of an electron-hole bi-layer in a double gate SOIFET with a 22 nm-thick channel. We have measured the drag resistance as a function of temperature and carrier density. We have also observed activated hysteretic behaviour in electron and hole currents in certain temperature and carrier density ranges. ",

author = "Sampo Laakso and Mika Prunnila and Jouni Ahopelto",

year = "2011",

language = "English",

pages = "123--124",

booktitle = "EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits",

publisher = "University of Granada",

address = "Spain",

note = "7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011, EUROSOI 2011 ; Conference date: 17-01-2011 Through 19-01-2011",

}

Laakso, S, Prunnila, M & Ahopelto, J 2011, Electron-hole bi-layers in ultra-thin SOI-devices. in EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits: Conference Proceedings. University of Granada, pp. 123-124, 7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011, Granada, Spain, 17/01/11. <https://cordis.europa.eu/docs/projects/cnect/3/216373/080/deliverables/001-EUROSOID410.pdf>

Electron-hole bi-layers in ultra-thin SOI-devices. / Laakso, Sampo; Prunnila, Mika ; Ahopelto, Jouni.
EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits: Conference Proceedings. University of Granada, 2011. p. 123-124.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Electron-hole bi-layers in ultra-thin SOI-devices

AU - Laakso, Sampo

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2011

Y1 - 2011

N2 - We have investigated the properties of an electron-hole bi-layer in a double gate SOIFET with a 22 nm-thick channel. We have measured the drag resistance as a function of temperature and carrier density. We have also observed activated hysteretic behaviour in electron and hole currents in certain temperature and carrier density ranges.

AB - We have investigated the properties of an electron-hole bi-layer in a double gate SOIFET with a 22 nm-thick channel. We have measured the drag resistance as a function of temperature and carrier density. We have also observed activated hysteretic behaviour in electron and hole currents in certain temperature and carrier density ranges.

M3 - Conference article in proceedings

SP - 123

EP - 124

BT - EUROSOI 2011 VII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits

PB - University of Granada

T2 - 7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011

Y2 - 17 January 2011 through 19 January 2011

ER -

Electron-hole bi-layers in ultra-thin SOI-devices

Abstract

Conference

Access to Document

Fingerprint

Cite this