Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K

Mika Prunnila (Corresponding Author), Jouni Ahopelto, F. Gamiz

Research output: Contribution to journalArticleScientificpeer-review

16 Citations (Scopus)

Abstract

Low temperature mobility measurements of silicon-on-insulator (SOI) metal-oxidefield-effect-transistors are reported. The batch of devices fabricated in this work includes both ultrathin and thick devices for which the SOI film thicknesses are in the ranges of 10–15 nm and 56–61 nm, respectively. The 4.2 K peak mobility of the thick devices is 1.9 m2/V s. The ultrathin devices show mobility degradation at low electron densities where the mobility is also observed to decrease with decreasing the SOI film thickness. The peak mobilities of these devices are in the range of 1.35–1.57 m2/V s. Numerical calculations show that ultrathin devices are in the limit where the electrons are confined by the quantum well defined by gate oxide and buried oxide, which is interpreted to lead to the observed mobility degradation.
Original languageEnglish
Pages (from-to)2298 - 2300
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number13
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Fingerprint

electron mobility
insulators
silicon
film thickness
degradation
oxides
transistors
quantum wells
metals
electrons

Keywords

  • silicon-on-insulator
  • SOI
  • MOSFET
  • electron mobility

Cite this

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title = "Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K",
abstract = "Low temperature mobility measurements of silicon-on-insulator (SOI) metal-oxidefield-effect-transistors are reported. The batch of devices fabricated in this work includes both ultrathin and thick devices for which the SOI film thicknesses are in the ranges of 10–15 nm and 56–61 nm, respectively. The 4.2 K peak mobility of the thick devices is 1.9 m2/V s. The ultrathin devices show mobility degradation at low electron densities where the mobility is also observed to decrease with decreasing the SOI film thickness. The peak mobilities of these devices are in the range of 1.35–1.57 m2/V s. Numerical calculations show that ultrathin devices are in the limit where the electrons are confined by the quantum well defined by gate oxide and buried oxide, which is interpreted to lead to the observed mobility degradation.",
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language = "English",
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Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Gamiz, F.

In: Applied Physics Letters, Vol. 84, No. 13, 2004, p. 2298 - 2300.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Gamiz, F.

PY - 2004

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AB - Low temperature mobility measurements of silicon-on-insulator (SOI) metal-oxidefield-effect-transistors are reported. The batch of devices fabricated in this work includes both ultrathin and thick devices for which the SOI film thicknesses are in the ranges of 10–15 nm and 56–61 nm, respectively. The 4.2 K peak mobility of the thick devices is 1.9 m2/V s. The ultrathin devices show mobility degradation at low electron densities where the mobility is also observed to decrease with decreasing the SOI film thickness. The peak mobilities of these devices are in the range of 1.35–1.57 m2/V s. Numerical calculations show that ultrathin devices are in the limit where the electrons are confined by the quantum well defined by gate oxide and buried oxide, which is interpreted to lead to the observed mobility degradation.

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KW - MOSFET

KW - electron mobility

U2 - 10.1063/1.1687980

DO - 10.1063/1.1687980

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VL - 84

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