Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K

Mika Prunnila (Corresponding Author), Jouni Ahopelto, F. Gamiz

    Research output: Contribution to journalArticleScientificpeer-review

    16 Citations (Scopus)

    Abstract

    Low temperature mobility measurements of silicon-on-insulator (SOI) metal-oxidefield-effect-transistors are reported. The batch of devices fabricated in this work includes both ultrathin and thick devices for which the SOI film thicknesses are in the ranges of 10–15 nm and 56–61 nm, respectively. The 4.2 K peak mobility of the thick devices is 1.9 m2/V s. The ultrathin devices show mobility degradation at low electron densities where the mobility is also observed to decrease with decreasing the SOI film thickness. The peak mobilities of these devices are in the range of 1.35–1.57 m2/V s. Numerical calculations show that ultrathin devices are in the limit where the electrons are confined by the quantum well defined by gate oxide and buried oxide, which is interpreted to lead to the observed mobility degradation.
    Original languageEnglish
    Pages (from-to)2298 - 2300
    Number of pages3
    JournalApplied Physics Letters
    Volume84
    Issue number13
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    electron mobility
    insulators
    silicon
    film thickness
    degradation
    oxides
    transistors
    quantum wells
    metals
    electrons

    Keywords

    • silicon-on-insulator
    • SOI
    • MOSFET
    • electron mobility

    Cite this

    @article{72addb0cd55246a9a53a70d2b5e9f812,
    title = "Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K",
    abstract = "Low temperature mobility measurements of silicon-on-insulator (SOI) metal-oxidefield-effect-transistors are reported. The batch of devices fabricated in this work includes both ultrathin and thick devices for which the SOI film thicknesses are in the ranges of 10–15 nm and 56–61 nm, respectively. The 4.2 K peak mobility of the thick devices is 1.9 m2/V s. The ultrathin devices show mobility degradation at low electron densities where the mobility is also observed to decrease with decreasing the SOI film thickness. The peak mobilities of these devices are in the range of 1.35–1.57 m2/V s. Numerical calculations show that ultrathin devices are in the limit where the electrons are confined by the quantum well defined by gate oxide and buried oxide, which is interpreted to lead to the observed mobility degradation.",
    keywords = "silicon-on-insulator, SOI, MOSFET, electron mobility",
    author = "Mika Prunnila and Jouni Ahopelto and F. Gamiz",
    year = "2004",
    doi = "10.1063/1.1687980",
    language = "English",
    volume = "84",
    pages = "2298 -- 2300",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    number = "13",

    }

    Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Gamiz, F.

    In: Applied Physics Letters, Vol. 84, No. 13, 2004, p. 2298 - 2300.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    AU - Gamiz, F.

    PY - 2004

    Y1 - 2004

    N2 - Low temperature mobility measurements of silicon-on-insulator (SOI) metal-oxidefield-effect-transistors are reported. The batch of devices fabricated in this work includes both ultrathin and thick devices for which the SOI film thicknesses are in the ranges of 10–15 nm and 56–61 nm, respectively. The 4.2 K peak mobility of the thick devices is 1.9 m2/V s. The ultrathin devices show mobility degradation at low electron densities where the mobility is also observed to decrease with decreasing the SOI film thickness. The peak mobilities of these devices are in the range of 1.35–1.57 m2/V s. Numerical calculations show that ultrathin devices are in the limit where the electrons are confined by the quantum well defined by gate oxide and buried oxide, which is interpreted to lead to the observed mobility degradation.

    AB - Low temperature mobility measurements of silicon-on-insulator (SOI) metal-oxidefield-effect-transistors are reported. The batch of devices fabricated in this work includes both ultrathin and thick devices for which the SOI film thicknesses are in the ranges of 10–15 nm and 56–61 nm, respectively. The 4.2 K peak mobility of the thick devices is 1.9 m2/V s. The ultrathin devices show mobility degradation at low electron densities where the mobility is also observed to decrease with decreasing the SOI film thickness. The peak mobilities of these devices are in the range of 1.35–1.57 m2/V s. Numerical calculations show that ultrathin devices are in the limit where the electrons are confined by the quantum well defined by gate oxide and buried oxide, which is interpreted to lead to the observed mobility degradation.

    KW - silicon-on-insulator

    KW - SOI

    KW - MOSFET

    KW - electron mobility

    U2 - 10.1063/1.1687980

    DO - 10.1063/1.1687980

    M3 - Article

    VL - 84

    SP - 2298

    EP - 2300

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 13

    ER -