Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions

Mika Prunnila (Corresponding Author), Jouni Ahopelto, A. Savin, Pekka Kivinen, J. Pekola, A. Manninen

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.
    Original languageEnglish
    Pages (from-to)773-776
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume13
    Issue number2-4
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Silicon
    insulators
    Electrons
    silicon
    electrons
    flow velocity
    Flow rate
    Electron tunneling
    Electron temperature
    mean free path
    Superconducting materials
    Electric fields
    electron energy
    Semiconductor materials
    Temperature
    electric fields
    energy
    temperature

    Keywords

    • electron phonon coupling
    • electron energy relaxation
    • silicon-on-insulator
    • superconductivity

    Cite this

    @article{d3ae375534a649908843995d6aa7c9e8,
    title = "Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions",
    abstract = "Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the {"}dirty limit{"} where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.",
    keywords = "electron phonon coupling, electron energy relaxation, silicon-on-insulator, superconductivity",
    author = "Mika Prunnila and Jouni Ahopelto and A. Savin and Pekka Kivinen and J. Pekola and A. Manninen",
    year = "2002",
    doi = "10.1016/S1386-9477(02)00280-1",
    language = "English",
    volume = "13",
    pages = "773--776",
    journal = "Physica E: Low-Dimensional Systems and Nanostructures",
    issn = "1386-9477",
    publisher = "Elsevier",
    number = "2-4",

    }

    Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Savin, A.; Kivinen, Pekka; Pekola, J.; Manninen, A.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 2002, p. 773-776.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    AU - Savin, A.

    AU - Kivinen, Pekka

    AU - Pekola, J.

    AU - Manninen, A.

    PY - 2002

    Y1 - 2002

    N2 - Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.

    AB - Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.

    KW - electron phonon coupling

    KW - electron energy relaxation

    KW - silicon-on-insulator

    KW - superconductivity

    U2 - 10.1016/S1386-9477(02)00280-1

    DO - 10.1016/S1386-9477(02)00280-1

    M3 - Article

    VL - 13

    SP - 773

    EP - 776

    JO - Physica E: Low-Dimensional Systems and Nanostructures

    JF - Physica E: Low-Dimensional Systems and Nanostructures

    SN - 1386-9477

    IS - 2-4

    ER -