Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions

Mika Prunnila (Corresponding Author), Jouni Ahopelto, A. Savin, Pekka Kivinen, J. Pekola, A. Manninen

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.
Original languageEnglish
Pages (from-to)773-776
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume13
Issue number2-4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon
insulators
Electrons
silicon
electrons
flow velocity
Flow rate
Electron tunneling
Electron temperature
mean free path
Superconducting materials
Electric fields
electron energy
Semiconductor materials
Temperature
electric fields
energy
temperature

Keywords

  • electron phonon coupling
  • electron energy relaxation
  • silicon-on-insulator
  • superconductivity

Cite this

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title = "Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions",
abstract = "Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the {"}dirty limit{"} where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.",
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author = "Mika Prunnila and Jouni Ahopelto and A. Savin and Pekka Kivinen and J. Pekola and A. Manninen",
year = "2002",
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language = "English",
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issn = "1386-9477",
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}

Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Savin, A.; Kivinen, Pekka; Pekola, J.; Manninen, A.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 2002, p. 773-776.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Savin, A.

AU - Kivinen, Pekka

AU - Pekola, J.

AU - Manninen, A.

PY - 2002

Y1 - 2002

N2 - Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.

AB - Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.

KW - electron phonon coupling

KW - electron energy relaxation

KW - silicon-on-insulator

KW - superconductivity

U2 - 10.1016/S1386-9477(02)00280-1

DO - 10.1016/S1386-9477(02)00280-1

M3 - Article

VL - 13

SP - 773

EP - 776

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

ER -