Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 773-776 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 13 |
| Issue number | 2-4 |
| DOIs | |
| Publication status | Published - 2002 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- electron phonon coupling
- electron energy relaxation
- silicon-on-insulator
- superconductivity
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Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Savin, A.; Kivinen, Pekka; Pekola, J.; Manninen, A.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 2002, p. 773-776.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions
AU - Prunnila, Mika
AU - Ahopelto, Jouni
AU - Savin, A.
AU - Kivinen, Pekka
AU - Pekola, J.
AU - Manninen, A.
PY - 2002
Y1 - 2002
N2 - Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.
AB - Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.
KW - electron phonon coupling
KW - electron energy relaxation
KW - silicon-on-insulator
KW - superconductivity
U2 - 10.1016/S1386-9477(02)00280-1
DO - 10.1016/S1386-9477(02)00280-1
M3 - Article
VL - 13
SP - 773
EP - 776
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
ER -