Abstract
Energy flow rate in degenerate n-type
silicon-on-insulator (SOI) film is studied at low
temperatures. The electrons are heated above the lattice
temperature by electric field and the electron
temperature is measured via semiconductor superconductor
quasiparticle tunneling. The energy flow rate in the
system is found to be proportional to T5, indicating that
electron phonon relaxation rate and electron phonon phase
breaking rate are proportional to T3. The electron phonon
system in the SOI film is in the "dirty limit" where the
electron mean free path is smaller than the inverse of
the thermal phonon wave vector.
Original language | English |
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Pages (from-to) | 773-776 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 13 |
Issue number | 2-4 |
DOIs | |
Publication status | Published - 2002 |
MoE publication type | A1 Journal article-refereed |
Keywords
- electron phonon coupling
- electron energy relaxation
- silicon-on-insulator
- superconductivity