Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions

Mika Prunnila (Corresponding Author), Jouni Ahopelto, A. Savin, Pekka Kivinen, J. Pekola, A. Manninen

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.
    Original languageEnglish
    Pages (from-to)773-776
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume13
    Issue number2-4
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Keywords

    • electron phonon coupling
    • electron energy relaxation
    • silicon-on-insulator
    • superconductivity

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