Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions

Mika Prunnila; Jouni Ahopelto; A. Savin; Pekka Kivinen; J. Pekola; A. Manninen

doi:10.1016/S1386-9477(02)00280-1

Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions

Mika Prunnila (Corresponding Author), Jouni Ahopelto, A. Savin, Pekka Kivinen, J. Pekola, A. Manninen

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Abstract

Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.

Original language	English
Pages (from-to)	773-776
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	13
Issue number	2-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00280-1
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

Keywords

electron phonon coupling
electron energy relaxation
silicon-on-insulator
superconductivity

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@article{d3ae375534a649908843995d6aa7c9e8,

title = "Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions",

abstract = "Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the {"}dirty limit{"} where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.",

keywords = "electron phonon coupling, electron energy relaxation, silicon-on-insulator, superconductivity",

author = "Mika Prunnila and Jouni Ahopelto and A. Savin and Pekka Kivinen and J. Pekola and A. Manninen",

year = "2002",

doi = "10.1016/S1386-9477(02)00280-1",

language = "English",

volume = "13",

pages = "773--776",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "2-4",

}

Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Savin, A.; Kivinen, Pekka; Pekola, J.; Manninen, A.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 2002, p. 773-776.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Savin, A.

AU - Kivinen, Pekka

AU - Pekola, J.

AU - Manninen, A.

PY - 2002

Y1 - 2002

N2 - Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.

AB - Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T5, indicating that electron phonon relaxation rate and electron phonon phase breaking rate are proportional to T3. The electron phonon system in the SOI film is in the "dirty limit" where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.

KW - electron phonon coupling

KW - electron energy relaxation

KW - silicon-on-insulator

KW - superconductivity

U2 - 10.1016/S1386-9477(02)00280-1

DO - 10.1016/S1386-9477(02)00280-1

M3 - Article

VL - 13

SP - 773

EP - 776

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

ER -