Electron-phonon coupling in heavily doped silicon

Pekka Kivinen, A. Savin, Antti Manninen, Mika Prunnila, Jouni Ahopelto

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.
Original languageEnglish
Title of host publicationPhysics, Chemistry and Application of Nanostructures
Subtitle of host publicationReviews and Short Notes to NANOMEETING-2001 Minsk, Belarus, 22 - 25 May 2001
EditorsV.E. Borisenko, S.V. Gaponenko, V.S. Gurin
Place of PublicationNew Jersey
PublisherWorld Scientific Publishing
Pages180-183
ISBN (Print)978-981-024-618-1, 978-981-238-381-5
DOIs
Publication statusPublished - 2001
MoE publication typeA4 Article in a conference publication
EventNanomeeting 2001: Physics, Chemistry and Application of Nanostructures, Reviews and Short Notes to Nanomeeting 2001 - Minsk, Belarus, Russian Federation
Duration: 22 May 200125 May 2001

Conference

ConferenceNanomeeting 2001
CountryRussian Federation
CityMinsk, Belarus
Period22/05/0125/05/01

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