Electron-phonon coupling in heavily doped silicon

Pekka Kivinen, A. Savin, Antti Manninen, Mika Prunnila, Jouni Ahopelto

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review


    The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.
    Original languageEnglish
    Title of host publicationPhysics, Chemistry and Application of Nanostructures
    Subtitle of host publicationReviews and Short Notes to NANOMEETING-2001 Minsk, Belarus, 22 - 25 May 2001
    EditorsV.E. Borisenko, S.V. Gaponenko, V.S. Gurin
    Place of PublicationNew Jersey
    PublisherWorld Scientific Publishing
    ISBN (Print)978-981-024-618-1, 978-981-238-381-5
    Publication statusPublished - 2001
    MoE publication typeA4 Article in a conference publication
    EventNanomeeting 2001: Physics, Chemistry and Application of Nanostructures, Reviews and Short Notes to Nanomeeting 2001 - Minsk, Belarus, Russian Federation
    Duration: 22 May 200125 May 2001


    ConferenceNanomeeting 2001
    Country/TerritoryRussian Federation
    CityMinsk, Belarus


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