Electron-phonon coupling in heavily doped silicon

Pekka Kivinen; A. Savin; Antti Manninen; Mika Prunnila; Jouni Ahopelto

doi:10.1142/9789812810076_0031

Electron-phonon coupling in heavily doped silicon

Pekka Kivinen, A. Savin, Antti Manninen, Mika Prunnila, Jouni Ahopelto

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T⁶ and the coupling constant is found to be 1.5 × 10⁸ W/K⁵m³, which is about one tenth of the value in normal metals.

Original language	English
Title of host publication	Physics, Chemistry and Application of Nanostructures
Subtitle of host publication	Reviews and Short Notes to NANOMEETING-2001 Minsk, Belarus, 22 - 25 May 2001
Editors	V.E. Borisenko, S.V. Gaponenko, V.S. Gurin
Place of Publication	New Jersey
Publisher	World Scientific Publishing
Pages	180-183
ISBN (Print)	978-981-024-618-1, 978-981-238-381-5
DOIs	https://doi.org/10.1142/9789812810076_0031
Publication status	Published - 2001
MoE publication type	A4 Article in a conference publication
Event	Nanomeeting 2001: Physics, Chemistry and Application of Nanostructures, Reviews and Short Notes to Nanomeeting 2001 - Minsk, Belarus, Russian Federation Duration: 22 May 2001 → 25 May 2001

Conference

Conference	Nanomeeting 2001
Country/Territory	Russian Federation
City	Minsk, Belarus
Period	22/05/01 → 25/05/01

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10.1142/9789812810076_0031

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Kivinen, P., Savin, A., Manninen, A., Prunnila, M., & Ahopelto, J. (2001). Electron-phonon coupling in heavily doped silicon. In V. E. Borisenko, S. V. Gaponenko, & V. S. Gurin (Eds.), Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to NANOMEETING-2001 Minsk, Belarus, 22 - 25 May 2001 (pp. 180-183). World Scientific Publishing. https://doi.org/10.1142/9789812810076_0031

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title = "Electron-phonon coupling in heavily doped silicon",

abstract = "The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.",

author = "Pekka Kivinen and A. Savin and Antti Manninen and Mika Prunnila and Jouni Ahopelto",

year = "2001",

doi = "10.1142/9789812810076\_0031",

language = "English",

isbn = "978-981-024-618-1",

pages = "180--183",

editor = "V.E. Borisenko and S.V. Gaponenko and V.S. Gurin",

booktitle = "Physics, Chemistry and Application of Nanostructures",

publisher = "World Scientific Publishing",

address = "Singapore",

note = "Nanomeeting 2001 : Physics, Chemistry and Application of Nanostructures, Reviews and Short Notes to Nanomeeting 2001 ; Conference date: 22-05-2001 Through 25-05-2001",

}

Kivinen, P, Savin, A, Manninen, A , Prunnila, M & Ahopelto, J 2001, Electron-phonon coupling in heavily doped silicon. in VE Borisenko, SV Gaponenko & VS Gurin (eds), Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to NANOMEETING-2001 Minsk, Belarus, 22 - 25 May 2001. World Scientific Publishing, New Jersey, pp. 180-183, Nanomeeting 2001, Minsk, Belarus, Russian Federation, 22/05/01. https://doi.org/10.1142/9789812810076_0031

Electron-phonon coupling in heavily doped silicon. / Kivinen, Pekka; Savin, A.; Manninen, Antti et al.
Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to NANOMEETING-2001 Minsk, Belarus, 22 - 25 May 2001. ed. / V.E. Borisenko; S.V. Gaponenko; V.S. Gurin. New Jersey: World Scientific Publishing, 2001. p. 180-183.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Electron-phonon coupling in heavily doped silicon

AU - Kivinen, Pekka

AU - Savin, A.

AU - Manninen, Antti

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2001

Y1 - 2001

N2 - The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.

AB - The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.

U2 - 10.1142/9789812810076_0031

DO - 10.1142/9789812810076_0031

M3 - Conference article in proceedings

SN - 978-981-024-618-1

SN - 978-981-238-381-5

SP - 180

EP - 183

BT - Physics, Chemistry and Application of Nanostructures

A2 - Borisenko, V.E.

A2 - Gaponenko, S.V.

A2 - Gurin, V.S.

PB - World Scientific Publishing

CY - New Jersey

T2 - Nanomeeting 2001

Y2 - 22 May 2001 through 25 May 2001

ER -

Kivinen P, Savin A, Manninen A , Prunnila M , Ahopelto J. Electron-phonon coupling in heavily doped silicon. In Borisenko VE, Gaponenko SV, Gurin VS, editors, Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to NANOMEETING-2001 Minsk, Belarus, 22 - 25 May 2001. New Jersey: World Scientific Publishing. 2001. p. 180-183 doi: 10.1142/9789812810076_0031

Electron-phonon coupling in heavily doped silicon

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