Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

P. Kivinen; A. Savin; M. Zgirski; P. Törmä; J. Pekola; Mika Prunnila; Jouni Ahopelto

doi:10.1063/1.1592627

Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

P. Kivinen, A. Savin, M. Zgirski, P. Törmä, J. Pekola, Mika Prunnila, Jouni Ahopelto

Research output: Contribution to journal › Article › Scientific › peer-review

26 Citations (Scopus)

Abstract

Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T⁶. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.

Original language	English
Pages (from-to)	3201-3205
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	5
DOIs	https://doi.org/10.1063/1.1592627
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed

Keywords

silicon-on-insulator
SOI
elemental semiconductors
thermal conductivity
electron-phonon interactions
Wiedemann-Franz law
heavily doped semiconductors

Access to Document

10.1063/1.1592627

Cite this

@article{4241b07c4bbd4c1c98fe1e27d58d726f,

title = "Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film",

abstract = "Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.",

keywords = "silicon-on-insulator, SOI, elemental semiconductors, thermal conductivity, electron-phonon interactions, Wiedemann-Franz law, heavily doped semiconductors",

author = "P. Kivinen and A. Savin and M. Zgirski and P. T{\"o}rm{\"a} and J. Pekola and Mika Prunnila and Jouni Ahopelto",

year = "2003",

doi = "10.1063/1.1592627",

language = "English",

volume = "94",

pages = "3201--3205",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics (AIP)",

number = "5",

}

TY - JOUR

T1 - Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

AU - Kivinen, P.

AU - Savin, A.

AU - Zgirski, M.

AU - Törmä, P.

AU - Pekola, J.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2003

Y1 - 2003

N2 - Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.

AB - Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.

KW - silicon-on-insulator

KW - SOI

KW - elemental semiconductors

KW - thermal conductivity

KW - electron-phonon interactions

KW - Wiedemann-Franz law

KW - heavily doped semiconductors

U2 - 10.1063/1.1592627

DO - 10.1063/1.1592627

M3 - Article

SN - 0021-8979

VL - 94

SP - 3201

EP - 3205

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

Abstract

Keywords

Access to Document

Fingerprint

Cite this