Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

P. Kivinen; A. Savin; M. Zgirski; P. Törmä; J. Pekola; Mika Prunnila; Jouni Ahopelto

doi:10.1063/1.1592627

Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

P. Kivinen, A. Savin, M. Zgirski, P. Törmä, J. Pekola, Mika Prunnila, Jouni Ahopelto

Research output: Contribution to journal › Article › Scientific › peer-review

24 Citations (Scopus)

Abstract

Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T⁶. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.

Original language	English
Pages (from-to)	3201-3205
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	5
DOIs	https://doi.org/10.1063/1.1592627
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed

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Keywords

silicon-on-insulator
SOI
elemental semiconductors
thermal conductivity
electron-phonon interactions
Wiedemann-Franz law
heavily doped semiconductors

Cite this

Kivinen, P., Savin, A., Zgirski, M., Törmä, P., Pekola, J., Prunnila, M., & Ahopelto, J. (2003). Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film. Journal of Applied Physics, 94(5), 3201-3205. https://doi.org/10.1063/1.1592627

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AU - Pekola, J.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

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KW - elemental semiconductors

KW - thermal conductivity

KW - electron-phonon interactions

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10.1063/1.1592627