Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

P. Kivinen, A. Savin, M. Zgirski, P. Törmä, J. Pekola, Mika Prunnila, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

24 Citations (Scopus)

Abstract

Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.
Original languageEnglish
Pages (from-to)3201-3205
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number5
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Fingerprint

thermal conductivity
insulators
heat
thermometers
silicon
electronics
heat transmission
electrons
electron energy
temperature
interactions

Keywords

  • silicon-on-insulator
  • SOI
  • elemental semiconductors
  • thermal conductivity
  • electron-phonon interactions
  • Wiedemann-Franz law
  • heavily doped semiconductors

Cite this

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title = "Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film",
abstract = "Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.",
keywords = "silicon-on-insulator, SOI, elemental semiconductors, thermal conductivity, electron-phonon interactions, Wiedemann-Franz law, heavily doped semiconductors",
author = "P. Kivinen and A. Savin and M. Zgirski and P. T{\"o}rm{\"a} and J. Pekola and Mika Prunnila and Jouni Ahopelto",
year = "2003",
doi = "10.1063/1.1592627",
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publisher = "American Institute of Physics AIP",
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Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film. / Kivinen, P.; Savin, A.; Zgirski, M.; Törmä, P.; Pekola, J.; Prunnila, Mika; Ahopelto, Jouni.

In: Journal of Applied Physics, Vol. 94, No. 5, 2003, p. 3201-3205.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

AU - Kivinen, P.

AU - Savin, A.

AU - Zgirski, M.

AU - Törmä, P.

AU - Pekola, J.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2003

Y1 - 2003

N2 - Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.

AB - Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.

KW - silicon-on-insulator

KW - SOI

KW - elemental semiconductors

KW - thermal conductivity

KW - electron-phonon interactions

KW - Wiedemann-Franz law

KW - heavily doped semiconductors

U2 - 10.1063/1.1592627

DO - 10.1063/1.1592627

M3 - Article

VL - 94

SP - 3201

EP - 3205

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -