Abstract
Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.
Original language | English |
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Pages (from-to) | 3201-3205 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2003 |
MoE publication type | A1 Journal article-refereed |
Keywords
- silicon-on-insulator
- SOI
- elemental semiconductors
- thermal conductivity
- electron-phonon interactions
- Wiedemann-Franz law
- heavily doped semiconductors