Electron-phonon heat transport in degenerate Si at low temperatures

Pasi Kivinen (Corresponding Author), Mika Prunnila, A. Savin, P. Törmä, J. Pekola, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    7 Citations (Scopus)

    Abstract

    The thermal conductance between electrons and phonons in a solid state system becomes comparatively weak at sub‐Kelvin temperatures. In this work five batches of thin heavily doped silicon‐on‐insulator samples with the electron concentration in the range of 2.0–16 × 1019 cm–3 were studied. Below 1 K all the samples were in the dirty limit of the thermal electron‐phonon coupling, where the thermal phonon wavelength exceeds the electron mean free path. The heat flow between electrons and phonons is proportional to (T6eT6ph), where Te (Tph) is the electron (phonon) temperature. The constant of proportionality of the heat flow strongly depends on the electron concentration and its magnitude is roughly two orders of magnitude smaller than in normal metals like Cu. These properties of degenerate Si make it promising material for many low temperature device applications.
    Original languageEnglish
    Pages (from-to)2848 - 2851
    Number of pages4
    JournalPhysica Status Solidi C: Conferences and Critical Reviews
    Volume1
    Issue number11
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    heat
    electrons
    heat transmission
    phonons
    mean free path
    solid state
    temperature
    wavelengths
    metals

    Keywords

    • 63.20.Kr
    • 66.70.+f
    • 73.40.Sx
    • phonons
    • electron phonon coupling

    Cite this

    @article{e2597cdfadb74d3ba2d75426e06c68a3,
    title = "Electron-phonon heat transport in degenerate Si at low temperatures",
    abstract = "The thermal conductance between electrons and phonons in a solid state system becomes comparatively weak at sub‐Kelvin temperatures. In this work five batches of thin heavily doped silicon‐on‐insulator samples with the electron concentration in the range of 2.0–16 × 1019 cm–3 were studied. Below 1 K all the samples were in the dirty limit of the thermal electron‐phonon coupling, where the thermal phonon wavelength exceeds the electron mean free path. The heat flow between electrons and phonons is proportional to (T6e–T6ph), where Te (Tph) is the electron (phonon) temperature. The constant of proportionality of the heat flow strongly depends on the electron concentration and its magnitude is roughly two orders of magnitude smaller than in normal metals like Cu. These properties of degenerate Si make it promising material for many low temperature device applications.",
    keywords = "63.20.Kr, 66.70.+f, 73.40.Sx, phonons, electron phonon coupling",
    author = "Pasi Kivinen and Mika Prunnila and A. Savin and P. T{\"o}rm{\"a} and J. Pekola and Jouni Ahopelto",
    year = "2004",
    doi = "10.1002/pssc.200405351",
    language = "English",
    volume = "1",
    pages = "2848 -- 2851",
    journal = "Physica Status Solidi C: Current Topics in Solid State Physics",
    issn = "1862-6351",
    publisher = "Wiley-VCH Verlag",
    number = "11",

    }

    Electron-phonon heat transport in degenerate Si at low temperatures. / Kivinen, Pasi (Corresponding Author); Prunnila, Mika; Savin, A.; Törmä, P.; Pekola, J.; Ahopelto, Jouni.

    In: Physica Status Solidi C: Conferences and Critical Reviews, Vol. 1, No. 11, 2004, p. 2848 - 2851.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Electron-phonon heat transport in degenerate Si at low temperatures

    AU - Kivinen, Pasi

    AU - Prunnila, Mika

    AU - Savin, A.

    AU - Törmä, P.

    AU - Pekola, J.

    AU - Ahopelto, Jouni

    PY - 2004

    Y1 - 2004

    N2 - The thermal conductance between electrons and phonons in a solid state system becomes comparatively weak at sub‐Kelvin temperatures. In this work five batches of thin heavily doped silicon‐on‐insulator samples with the electron concentration in the range of 2.0–16 × 1019 cm–3 were studied. Below 1 K all the samples were in the dirty limit of the thermal electron‐phonon coupling, where the thermal phonon wavelength exceeds the electron mean free path. The heat flow between electrons and phonons is proportional to (T6e–T6ph), where Te (Tph) is the electron (phonon) temperature. The constant of proportionality of the heat flow strongly depends on the electron concentration and its magnitude is roughly two orders of magnitude smaller than in normal metals like Cu. These properties of degenerate Si make it promising material for many low temperature device applications.

    AB - The thermal conductance between electrons and phonons in a solid state system becomes comparatively weak at sub‐Kelvin temperatures. In this work five batches of thin heavily doped silicon‐on‐insulator samples with the electron concentration in the range of 2.0–16 × 1019 cm–3 were studied. Below 1 K all the samples were in the dirty limit of the thermal electron‐phonon coupling, where the thermal phonon wavelength exceeds the electron mean free path. The heat flow between electrons and phonons is proportional to (T6e–T6ph), where Te (Tph) is the electron (phonon) temperature. The constant of proportionality of the heat flow strongly depends on the electron concentration and its magnitude is roughly two orders of magnitude smaller than in normal metals like Cu. These properties of degenerate Si make it promising material for many low temperature device applications.

    KW - 63.20.Kr

    KW - 66.70.+f

    KW - 73.40.Sx

    KW - phonons

    KW - electron phonon coupling

    U2 - 10.1002/pssc.200405351

    DO - 10.1002/pssc.200405351

    M3 - Article

    VL - 1

    SP - 2848

    EP - 2851

    JO - Physica Status Solidi C: Current Topics in Solid State Physics

    JF - Physica Status Solidi C: Current Topics in Solid State Physics

    SN - 1862-6351

    IS - 11

    ER -