Electron-phonon heat transport in degenerate Si at low temperatures

Pasi Kivinen (Corresponding Author), Mika Prunnila, A. Savin, P. Törmä, J. Pekola, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)

Abstract

The thermal conductance between electrons and phonons in a solid state system becomes comparatively weak at sub‐Kelvin temperatures. In this work five batches of thin heavily doped silicon‐on‐insulator samples with the electron concentration in the range of 2.0–16 × 1019 cm–3 were studied. Below 1 K all the samples were in the dirty limit of the thermal electron‐phonon coupling, where the thermal phonon wavelength exceeds the electron mean free path. The heat flow between electrons and phonons is proportional to (T6eT6ph), where Te (Tph) is the electron (phonon) temperature. The constant of proportionality of the heat flow strongly depends on the electron concentration and its magnitude is roughly two orders of magnitude smaller than in normal metals like Cu. These properties of degenerate Si make it promising material for many low temperature device applications.
Original languageEnglish
Pages (from-to)2848 - 2851
Number of pages4
JournalPhysica Status Solidi C: Conferences and Critical Reviews
Volume1
Issue number11
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

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heat
electrons
heat transmission
phonons
mean free path
solid state
temperature
wavelengths
metals

Keywords

  • 63.20.Kr
  • 66.70.+f
  • 73.40.Sx
  • phonons
  • electron phonon coupling

Cite this

@article{e2597cdfadb74d3ba2d75426e06c68a3,
title = "Electron-phonon heat transport in degenerate Si at low temperatures",
abstract = "The thermal conductance between electrons and phonons in a solid state system becomes comparatively weak at sub‐Kelvin temperatures. In this work five batches of thin heavily doped silicon‐on‐insulator samples with the electron concentration in the range of 2.0–16 × 1019 cm–3 were studied. Below 1 K all the samples were in the dirty limit of the thermal electron‐phonon coupling, where the thermal phonon wavelength exceeds the electron mean free path. The heat flow between electrons and phonons is proportional to (T6e–T6ph), where Te (Tph) is the electron (phonon) temperature. The constant of proportionality of the heat flow strongly depends on the electron concentration and its magnitude is roughly two orders of magnitude smaller than in normal metals like Cu. These properties of degenerate Si make it promising material for many low temperature device applications.",
keywords = "63.20.Kr, 66.70.+f, 73.40.Sx, phonons, electron phonon coupling",
author = "Pasi Kivinen and Mika Prunnila and A. Savin and P. T{\"o}rm{\"a} and J. Pekola and Jouni Ahopelto",
year = "2004",
doi = "10.1002/pssc.200405351",
language = "English",
volume = "1",
pages = "2848 -- 2851",
journal = "Physica Status Solidi C: Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "11",

}

Electron-phonon heat transport in degenerate Si at low temperatures. / Kivinen, Pasi (Corresponding Author); Prunnila, Mika; Savin, A.; Törmä, P.; Pekola, J.; Ahopelto, Jouni.

In: Physica Status Solidi C: Conferences and Critical Reviews, Vol. 1, No. 11, 2004, p. 2848 - 2851.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Electron-phonon heat transport in degenerate Si at low temperatures

AU - Kivinen, Pasi

AU - Prunnila, Mika

AU - Savin, A.

AU - Törmä, P.

AU - Pekola, J.

AU - Ahopelto, Jouni

PY - 2004

Y1 - 2004

N2 - The thermal conductance between electrons and phonons in a solid state system becomes comparatively weak at sub‐Kelvin temperatures. In this work five batches of thin heavily doped silicon‐on‐insulator samples with the electron concentration in the range of 2.0–16 × 1019 cm–3 were studied. Below 1 K all the samples were in the dirty limit of the thermal electron‐phonon coupling, where the thermal phonon wavelength exceeds the electron mean free path. The heat flow between electrons and phonons is proportional to (T6e–T6ph), where Te (Tph) is the electron (phonon) temperature. The constant of proportionality of the heat flow strongly depends on the electron concentration and its magnitude is roughly two orders of magnitude smaller than in normal metals like Cu. These properties of degenerate Si make it promising material for many low temperature device applications.

AB - The thermal conductance between electrons and phonons in a solid state system becomes comparatively weak at sub‐Kelvin temperatures. In this work five batches of thin heavily doped silicon‐on‐insulator samples with the electron concentration in the range of 2.0–16 × 1019 cm–3 were studied. Below 1 K all the samples were in the dirty limit of the thermal electron‐phonon coupling, where the thermal phonon wavelength exceeds the electron mean free path. The heat flow between electrons and phonons is proportional to (T6e–T6ph), where Te (Tph) is the electron (phonon) temperature. The constant of proportionality of the heat flow strongly depends on the electron concentration and its magnitude is roughly two orders of magnitude smaller than in normal metals like Cu. These properties of degenerate Si make it promising material for many low temperature device applications.

KW - 63.20.Kr

KW - 66.70.+f

KW - 73.40.Sx

KW - phonons

KW - electron phonon coupling

U2 - 10.1002/pssc.200405351

DO - 10.1002/pssc.200405351

M3 - Article

VL - 1

SP - 2848

EP - 2851

JO - Physica Status Solidi C: Current Topics in Solid State Physics

JF - Physica Status Solidi C: Current Topics in Solid State Physics

SN - 1862-6351

IS - 11

ER -