Electron Probe Microanalysis of HfO2 Thin Films on Conductive and Insulating Substrates

Marina Lulla, Jelena Asari, Jaan Aarik, Kaupo Kukli, Raul Rammula, Unto Tapper, Esko I. Kauppinen, Väinö Sammelselg (Corresponding Author)

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    Abstract

    Quantitative electron probe microanalysis of highly insulating materials is a complicated problem, partially solved by coating samples with grounded thin conductive layers or using novel scanning electron microscopy (SEM) techniques, such as low-voltage and/or variable pressure SEM. In this work, some problems of quantitative X-ray microanalysis of thin HfO2 films, in particular the possibility to determine mass thickness correlated to the density of the layer material, are discussed. For comparison, Al2O3, Ta2O5 and TiO2 films grown onto both semiconductive Si and insulating quartz substrates were also analysed. All the films studied were synthesized by atomic layer deposition method.
    Original languageEnglish
    Pages (from-to)195-198
    Number of pages4
    JournalMikrochimica Acta
    Volume155
    Issue number1-2
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed

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    Keywords

    • X-ray microanalysis
    • hafnium oxide
    • high-k oxides
    • thin films
    • mass thickness

    Cite this

    Lulla, M., Asari, J., Aarik, J., Kukli, K., Rammula, R., Tapper, U., Kauppinen, E. I., & Sammelselg, V. (2006). Electron Probe Microanalysis of HfO2 Thin Films on Conductive and Insulating Substrates. Mikrochimica Acta, 155(1-2), 195-198. https://doi.org/10.1007/s00604-006-0542-9