Electronic and optical studies with Langmuir-Blodgett transistors

Jari Paloheimo, Henrik Stubb, Paula Yli-Lahti, Peter Dyreklev, Olle Inganäs

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Abstract

Thin film transistor structures have been used to study semiconducting poly(3-alkylthiopene) and quinquethiophene thin films. The holes in these materials are stored into self-localized polaronic states giving low values for the measured field-effect mobilities. The carrier mobilities in monolayers are lower than in thicker films. The extra holes injected into LB films in a transistor act as non-radiative recombination centers for photoexcited excitons. The transistor structure then acts as a luminescence quenching device. Some future prospects concerning LB electronics are presented.
Original languageEnglish
Pages (from-to)283-286
JournalThin Solid Films
Volume210-211
Issue numberPart 1
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

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Paloheimo, J., Stubb, H., Yli-Lahti, P., Dyreklev, P., & Inganäs, O. (1992). Electronic and optical studies with Langmuir-Blodgett transistors. Thin Solid Films, 210-211(Part 1), 283-286. https://doi.org/10.1016/0040-6090(92)90235-4