Electronic and optical studies with Langmuir-Blodgett transistors

Jari Paloheimo, Henrik Stubb, Paula Yli-Lahti, Peter Dyreklev, Olle Inganäs

Research output: Contribution to journalArticleScientificpeer-review

26 Citations (Scopus)

Abstract

Thin film transistor structures have been used to study semiconducting poly(3-alkylthiopene) and quinquethiophene thin films. The holes in these materials are stored into self-localized polaronic states giving low values for the measured field-effect mobilities. The carrier mobilities in monolayers are lower than in thicker films. The extra holes injected into LB films in a transistor act as non-radiative recombination centers for photoexcited excitons. The transistor structure then acts as a luminescence quenching device. Some future prospects concerning LB electronics are presented.
Original languageEnglish
Pages (from-to)283-286
JournalThin Solid Films
Volume210-211
Issue numberPart 1
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

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Transistors
transistors
Langmuir Blodgett films
Carrier mobility
Thin film transistors
electronics
Thick films
Excitons
Luminescence
Quenching
Monolayers
Electronic equipment
thin films
carrier mobility
Thin films
thick films
quenching
excitons
luminescence
LDS 751

Cite this

Paloheimo, J., Stubb, H., Yli-Lahti, P., Dyreklev, P., & Inganäs, O. (1992). Electronic and optical studies with Langmuir-Blodgett transistors. Thin Solid Films, 210-211(Part 1), 283-286. https://doi.org/10.1016/0040-6090(92)90235-4
Paloheimo, Jari ; Stubb, Henrik ; Yli-Lahti, Paula ; Dyreklev, Peter ; Inganäs, Olle. / Electronic and optical studies with Langmuir-Blodgett transistors. In: Thin Solid Films. 1992 ; Vol. 210-211, No. Part 1. pp. 283-286.
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Paloheimo, J, Stubb, H, Yli-Lahti, P, Dyreklev, P & Inganäs, O 1992, 'Electronic and optical studies with Langmuir-Blodgett transistors', Thin Solid Films, vol. 210-211, no. Part 1, pp. 283-286. https://doi.org/10.1016/0040-6090(92)90235-4

Electronic and optical studies with Langmuir-Blodgett transistors. / Paloheimo, Jari; Stubb, Henrik; Yli-Lahti, Paula; Dyreklev, Peter; Inganäs, Olle.

In: Thin Solid Films, Vol. 210-211, No. Part 1, 1992, p. 283-286.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Electronic and optical studies with Langmuir-Blodgett transistors

AU - Paloheimo, Jari

AU - Stubb, Henrik

AU - Yli-Lahti, Paula

AU - Dyreklev, Peter

AU - Inganäs, Olle

N1 - Project code: PUO9021

PY - 1992

Y1 - 1992

N2 - Thin film transistor structures have been used to study semiconducting poly(3-alkylthiopene) and quinquethiophene thin films. The holes in these materials are stored into self-localized polaronic states giving low values for the measured field-effect mobilities. The carrier mobilities in monolayers are lower than in thicker films. The extra holes injected into LB films in a transistor act as non-radiative recombination centers for photoexcited excitons. The transistor structure then acts as a luminescence quenching device. Some future prospects concerning LB electronics are presented.

AB - Thin film transistor structures have been used to study semiconducting poly(3-alkylthiopene) and quinquethiophene thin films. The holes in these materials are stored into self-localized polaronic states giving low values for the measured field-effect mobilities. The carrier mobilities in monolayers are lower than in thicker films. The extra holes injected into LB films in a transistor act as non-radiative recombination centers for photoexcited excitons. The transistor structure then acts as a luminescence quenching device. Some future prospects concerning LB electronics are presented.

U2 - 10.1016/0040-6090(92)90235-4

DO - 10.1016/0040-6090(92)90235-4

M3 - Article

VL - 210-211

SP - 283

EP - 286

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

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Paloheimo J, Stubb H, Yli-Lahti P, Dyreklev P, Inganäs O. Electronic and optical studies with Langmuir-Blodgett transistors. Thin Solid Films. 1992;210-211(Part 1):283-286. https://doi.org/10.1016/0040-6090(92)90235-4