Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film

A. Savin (Corresponding Author), J. Pekola, Mika Prunnila, Jouni Ahopelto, P. Kivinen

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.
Original languageEnglish
Pages (from-to)57 - 60
Number of pages4
JournalPhysica Scripta
VolumeT114
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

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Silicon-on-insulator
hot electrons
Cooling
Semiconductors
coolers
insulators
Electronics
Electron
cooling
silicon
Superconductor
Phonon
silicon films
electronics
Silicon
electrons
Phonons
Kelvin
Heat Flow
Conductance

Cite this

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title = "Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film",
abstract = "The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.",
author = "A. Savin and J. Pekola and Mika Prunnila and Jouni Ahopelto and P. Kivinen",
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Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film. / Savin, A. (Corresponding Author); Pekola, J.; Prunnila, Mika; Ahopelto, Jouni; Kivinen, P.

In: Physica Scripta, Vol. T114, 2004, p. 57 - 60.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film

AU - Savin, A.

AU - Pekola, J.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Kivinen, P.

PY - 2004

Y1 - 2004

N2 - The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.

AB - The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.

U2 - 10.1088/0031-8949/2004/T114/013

DO - 10.1088/0031-8949/2004/T114/013

M3 - Article

VL - T114

SP - 57

EP - 60

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

ER -