Abstract
The influence of carrier concentration in silicon-on-insulator film on
the thermal characteristics of semiconductor and performance of the
superconductor-semiconductor-superconductor micro-coolers have been
investigated at sub kelvin temperatures. The overheating of the lattice
in heavily doped silicon film must be taken into account in the analysis
of electron-phonon coupling experiment and operation of the cooler
device. The heat flow between electrons and phonons in heavily doped
silicon films is found to be proportional to T6, which
is in accordance with theoretical prediction for dirty limit.
Increasing the doping level in the semiconductor considerably increases
both the efficiency of the cooler (characteristic conductance of
Schottky junction) and electron-phonon coupling in the semiconductor.
| Original language | English |
|---|---|
| Pages (from-to) | 57 - 60 |
| Number of pages | 4 |
| Journal | Physica Scripta |
| Volume | T114 |
| DOIs | |
| Publication status | Published - 2004 |
| MoE publication type | A1 Journal article-refereed |
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Savin, A., Pekola, J., Prunnila, M., Ahopelto, J., & Kivinen, P. (2004). Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film. Physica Scripta, T114, 57 - 60. https://doi.org/10.1088/0031-8949/2004/T114/013