Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 57 - 60 |
| Number of pages | 4 |
| Journal | Physica Scripta |
| Volume | T114 |
| DOIs | |
| Publication status | Published - 2004 |
| MoE publication type | A1 Journal article-refereed |
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Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film. / Savin, A. (Corresponding Author); Pekola, J.; Prunnila, Mika; Ahopelto, Jouni; Kivinen, P.
In: Physica Scripta, Vol. T114, 2004, p. 57 - 60.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film
AU - Savin, A.
AU - Pekola, J.
AU - Prunnila, Mika
AU - Ahopelto, Jouni
AU - Kivinen, P.
PY - 2004
Y1 - 2004
N2 - The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.
AB - The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.
U2 - 10.1088/0031-8949/2004/T114/013
DO - 10.1088/0031-8949/2004/T114/013
M3 - Article
VL - T114
SP - 57
EP - 60
JO - Physica Scripta
JF - Physica Scripta
SN - 0031-8949
ER -