Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film

A. Savin; J. Pekola; Mika Prunnila; Jouni Ahopelto; P. Kivinen

doi:10.1088/0031-8949/2004/T114/013

Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film

A. Savin (Corresponding Author), J. Pekola, Mika Prunnila, Jouni Ahopelto, P. Kivinen

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T⁶, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.

Original language	English
Pages (from-to)	57 - 60
Number of pages	4
Journal	Physica Scripta
Volume	T114
DOIs	https://doi.org/10.1088/0031-8949/2004/T114/013
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

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Savin, A., Pekola, J., Prunnila, M., Ahopelto, J., & Kivinen, P. (2004). Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film. Physica Scripta, T114, 57 - 60. https://doi.org/10.1088/0031-8949/2004/T114/013

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abstract = "The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.",

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T1 - Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film

AU - Savin, A.

AU - Pekola, J.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Kivinen, P.

PY - 2004

Y1 - 2004

N2 - The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.

AB - The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.

U2 - 10.1088/0031-8949/2004/T114/013

DO - 10.1088/0031-8949/2004/T114/013

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SP - 57

EP - 60

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

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10.1088/0031-8949/2004/T114/013