The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of the cooler (characteristic conductance of Schottky junction) and electron-phonon coupling in the semiconductor.
Savin, A., Pekola, J., Prunnila, M., Ahopelto, J., & Kivinen, P. (2004). Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film. Physica Scripta, T114, 57 - 60. https://doi.org/10.1088/0031-8949/2004/T114/013