Electronic cooling of a submicron-sized metallic beam

J.T. Muhonen; Antti Niskanen; M. Meschke; Yu.A. Pashkin; J.S. Tsai; L. Sainiemi; S. Franssila; J.P. Pekola

doi:10.1063/1.3080668

Electronic cooling of a submicron-sized metallic beam

J.T. Muhonen (Corresponding Author), Antti Niskanen, M. Meschke, Yu.A. Pashkin, J.S. Tsai, L. Sainiemi, S. Franssila, J.P. Pekola

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

17 Citations (Scopus)

Abstract

We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by developing a simple fabrication method for reliably releasing narrow submicron-sized metal beams. The process is based on reactive ion etching and uses a conducting substrate to avoid charge-up damage and is compatible with, e.g., conventional e-beam lithography, shadow-angle metal deposition, and oxide tunnel junctions. The devices function well and exhibit clear cooling, up to a factor of 2 at sub-Kelvin temperatures.

Original language	English
Article number	073101
Number of pages	3
Journal	Applied Physics Letters
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.3080668
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

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Keywords

electronic cooling
gold
palladium
superconductor-insulator
superconducting junction devices

Cite this

Muhonen, J. T., Niskanen, A., Meschke, M., Pashkin, Y. A., Tsai, J. S., Sainiemi, L., Franssila, S., & Pekola, J. P. (2009). Electronic cooling of a submicron-sized metallic beam. Applied Physics Letters, 94(7), [073101]. https://doi.org/10.1063/1.3080668

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AU - Niskanen, Antti

AU - Meschke, M.

AU - Pashkin, Yu.A.

AU - Tsai, J.S.

AU - Sainiemi, L.

AU - Franssila, S.

AU - Pekola, J.P.

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AB - We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by developing a simple fabrication method for reliably releasing narrow submicron-sized metal beams. The process is based on reactive ion etching and uses a conducting substrate to avoid charge-up damage and is compatible with, e.g., conventional e-beam lithography, shadow-angle metal deposition, and oxide tunnel junctions. The devices function well and exhibit clear cooling, up to a factor of 2 at sub-Kelvin temperatures.

KW - electronic cooling

KW - gold

KW - palladium

KW - superconductor-insulator

KW - superconducting junction devices

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Access to Document

10.1063/1.3080668