Electronic cooling of a submicron-sized metallic beam

J.T. Muhonen (Corresponding Author), Antti Niskanen, M. Meschke, Yu.A. Pashkin, J.S. Tsai, L. Sainiemi, S. Franssila, J.P. Pekola

Research output: Contribution to journalArticleScientificpeer-review

17 Citations (Scopus)

Abstract

We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by developing a simple fabrication method for reliably releasing narrow submicron-sized metal beams. The process is based on reactive ion etching and uses a conducting substrate to avoid charge-up damage and is compatible with, e.g., conventional e-beam lithography, shadow-angle metal deposition, and oxide tunnel junctions. The devices function well and exhibit clear cooling, up to a factor of 2 at sub-Kelvin temperatures.
Original languageEnglish
Article number073101
Number of pages3
JournalApplied Physics Letters
Volume94
Issue number7
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Fingerprint

cooling
tunnel junctions
electronics
metals
releasing
lithography
insulators
etching
damage
conduction
fabrication
oxides
ions
temperature

Keywords

  • electronic cooling
  • gold
  • palladium
  • superconductor-insulator
  • superconducting junction devices

Cite this

Muhonen, J. T., Niskanen, A., Meschke, M., Pashkin, Y. A., Tsai, J. S., Sainiemi, L., ... Pekola, J. P. (2009). Electronic cooling of a submicron-sized metallic beam. Applied Physics Letters, 94(7), [073101]. https://doi.org/10.1063/1.3080668
Muhonen, J.T. ; Niskanen, Antti ; Meschke, M. ; Pashkin, Yu.A. ; Tsai, J.S. ; Sainiemi, L. ; Franssila, S. ; Pekola, J.P. / Electronic cooling of a submicron-sized metallic beam. In: Applied Physics Letters. 2009 ; Vol. 94, No. 7.
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abstract = "We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by developing a simple fabrication method for reliably releasing narrow submicron-sized metal beams. The process is based on reactive ion etching and uses a conducting substrate to avoid charge-up damage and is compatible with, e.g., conventional e-beam lithography, shadow-angle metal deposition, and oxide tunnel junctions. The devices function well and exhibit clear cooling, up to a factor of 2 at sub-Kelvin temperatures.",
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Muhonen, JT, Niskanen, A, Meschke, M, Pashkin, YA, Tsai, JS, Sainiemi, L, Franssila, S & Pekola, JP 2009, 'Electronic cooling of a submicron-sized metallic beam', Applied Physics Letters, vol. 94, no. 7, 073101. https://doi.org/10.1063/1.3080668

Electronic cooling of a submicron-sized metallic beam. / Muhonen, J.T. (Corresponding Author); Niskanen, Antti; Meschke, M.; Pashkin, Yu.A.; Tsai, J.S.; Sainiemi, L.; Franssila, S.; Pekola, J.P.

In: Applied Physics Letters, Vol. 94, No. 7, 073101, 2009.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Electronic cooling of a submicron-sized metallic beam

AU - Muhonen, J.T.

AU - Niskanen, Antti

AU - Meschke, M.

AU - Pashkin, Yu.A.

AU - Tsai, J.S.

AU - Sainiemi, L.

AU - Franssila, S.

AU - Pekola, J.P.

PY - 2009

Y1 - 2009

N2 - We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by developing a simple fabrication method for reliably releasing narrow submicron-sized metal beams. The process is based on reactive ion etching and uses a conducting substrate to avoid charge-up damage and is compatible with, e.g., conventional e-beam lithography, shadow-angle metal deposition, and oxide tunnel junctions. The devices function well and exhibit clear cooling, up to a factor of 2 at sub-Kelvin temperatures.

AB - We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by developing a simple fabrication method for reliably releasing narrow submicron-sized metal beams. The process is based on reactive ion etching and uses a conducting substrate to avoid charge-up damage and is compatible with, e.g., conventional e-beam lithography, shadow-angle metal deposition, and oxide tunnel junctions. The devices function well and exhibit clear cooling, up to a factor of 2 at sub-Kelvin temperatures.

KW - electronic cooling

KW - gold

KW - palladium

KW - superconductor-insulator

KW - superconducting junction devices

U2 - 10.1063/1.3080668

DO - 10.1063/1.3080668

M3 - Article

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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M1 - 073101

ER -

Muhonen JT, Niskanen A, Meschke M, Pashkin YA, Tsai JS, Sainiemi L et al. Electronic cooling of a submicron-sized metallic beam. Applied Physics Letters. 2009;94(7). 073101. https://doi.org/10.1063/1.3080668