Electronic transport properties of thin films of WSi2 and MoSi2

Christos Krontiras, Ilkka Suni, Francois d'Heurle, Francoise LeGoues, R. Joshi

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Abstract

The transport properties, resistivity and Hall coefficients have been measured from 4 to 300 K for WSi2 and MoSi2 films as deposited and after different annealing stages. In samples annealed at 1000 degrees C the room temperature resistivity is dominated by holes.
The sign of the Hall effect changes in both disilicides at about 100 K. As-deposited amorphous samples display a very strong negative temperature coefficient of resistivity, characteristic of highly disordered metallic glasses; in these samples the Hall effect could not be measured.
The samples corresponding to the resistivity maximum (after respective anneals at 550 and 600 degrees C), known to be already crystallised with a high density of stacking faults, also show a negative temperature coefficient; the Hall constant remains dominated by hole transport over the whole range of temperatures investigated.
At room temperature the temperature contribution to the resistivity is 11 mu Omega cm for WSi2 and 19 mu Omega cm for MoSi2.
Original languageEnglish
Pages (from-to)1953-1961
JournalJournal of Physics F: Metal Physics
Volume17
Issue number9
DOIs
Publication statusPublished - 1987
MoE publication typeB1 Article in a scientific magazine

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Krontiras, C., Suni, I., d'Heurle, F., LeGoues, F., & Joshi, R. (1987). Electronic transport properties of thin films of WSi2 and MoSi2. Journal of Physics F: Metal Physics, 17(9), 1953-1961. https://doi.org/10.1088/0305-4608/17/9/020