Electronic transport properties of thin films of WSi2 and MoSi2

Christos Krontiras, Ilkka Suni, Francois d'Heurle, Francoise LeGoues, R. Joshi

Research output: Contribution to journalArticleScientific

22 Citations (Scopus)

Abstract

The transport properties, resistivity and Hall coefficients have been measured from 4 to 300 K for WSi2 and MoSi2 films as deposited and after different annealing stages. In samples annealed at 1000 degrees C the room temperature resistivity is dominated by holes.
The sign of the Hall effect changes in both disilicides at about 100 K. As-deposited amorphous samples display a very strong negative temperature coefficient of resistivity, characteristic of highly disordered metallic glasses; in these samples the Hall effect could not be measured.
The samples corresponding to the resistivity maximum (after respective anneals at 550 and 600 degrees C), known to be already crystallised with a high density of stacking faults, also show a negative temperature coefficient; the Hall constant remains dominated by hole transport over the whole range of temperatures investigated.
At room temperature the temperature contribution to the resistivity is 11 mu Omega cm for WSi2 and 19 mu Omega cm for MoSi2.
Original languageEnglish
Pages (from-to)1953-1961
JournalJournal of Physics F: Metal Physics
Volume17
Issue number9
DOIs
Publication statusPublished - 1987
MoE publication typeB1 Article in a scientific magazine

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transport properties
electrical resistivity
Hall effect
thin films
electronics
coefficients
disilicides
temperature
room temperature
metallic glasses
crystal defects
annealing

Cite this

Krontiras, C., Suni, I., d'Heurle, F., LeGoues, F., & Joshi, R. (1987). Electronic transport properties of thin films of WSi2 and MoSi2. Journal of Physics F: Metal Physics, 17(9), 1953-1961. https://doi.org/10.1088/0305-4608/17/9/020
Krontiras, Christos ; Suni, Ilkka ; d'Heurle, Francois ; LeGoues, Francoise ; Joshi, R. / Electronic transport properties of thin films of WSi2 and MoSi2. In: Journal of Physics F: Metal Physics. 1987 ; Vol. 17, No. 9. pp. 1953-1961.
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abstract = "The transport properties, resistivity and Hall coefficients have been measured from 4 to 300 K for WSi2 and MoSi2 films as deposited and after different annealing stages. In samples annealed at 1000 degrees C the room temperature resistivity is dominated by holes. The sign of the Hall effect changes in both disilicides at about 100 K. As-deposited amorphous samples display a very strong negative temperature coefficient of resistivity, characteristic of highly disordered metallic glasses; in these samples the Hall effect could not be measured. The samples corresponding to the resistivity maximum (after respective anneals at 550 and 600 degrees C), known to be already crystallised with a high density of stacking faults, also show a negative temperature coefficient; the Hall constant remains dominated by hole transport over the whole range of temperatures investigated. At room temperature the temperature contribution to the resistivity is 11 mu Omega cm for WSi2 and 19 mu Omega cm for MoSi2.",
author = "Christos Krontiras and Ilkka Suni and Francois d'Heurle and Francoise LeGoues and R. Joshi",
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Krontiras, C, Suni, I, d'Heurle, F, LeGoues, F & Joshi, R 1987, 'Electronic transport properties of thin films of WSi2 and MoSi2', Journal of Physics F: Metal Physics, vol. 17, no. 9, pp. 1953-1961. https://doi.org/10.1088/0305-4608/17/9/020

Electronic transport properties of thin films of WSi2 and MoSi2. / Krontiras, Christos; Suni, Ilkka; d'Heurle, Francois; LeGoues, Francoise; Joshi, R.

In: Journal of Physics F: Metal Physics, Vol. 17, No. 9, 1987, p. 1953-1961.

Research output: Contribution to journalArticleScientific

TY - JOUR

T1 - Electronic transport properties of thin films of WSi2 and MoSi2

AU - Krontiras, Christos

AU - Suni, Ilkka

AU - d'Heurle, Francois

AU - LeGoues, Francoise

AU - Joshi, R.

PY - 1987

Y1 - 1987

N2 - The transport properties, resistivity and Hall coefficients have been measured from 4 to 300 K for WSi2 and MoSi2 films as deposited and after different annealing stages. In samples annealed at 1000 degrees C the room temperature resistivity is dominated by holes. The sign of the Hall effect changes in both disilicides at about 100 K. As-deposited amorphous samples display a very strong negative temperature coefficient of resistivity, characteristic of highly disordered metallic glasses; in these samples the Hall effect could not be measured. The samples corresponding to the resistivity maximum (after respective anneals at 550 and 600 degrees C), known to be already crystallised with a high density of stacking faults, also show a negative temperature coefficient; the Hall constant remains dominated by hole transport over the whole range of temperatures investigated. At room temperature the temperature contribution to the resistivity is 11 mu Omega cm for WSi2 and 19 mu Omega cm for MoSi2.

AB - The transport properties, resistivity and Hall coefficients have been measured from 4 to 300 K for WSi2 and MoSi2 films as deposited and after different annealing stages. In samples annealed at 1000 degrees C the room temperature resistivity is dominated by holes. The sign of the Hall effect changes in both disilicides at about 100 K. As-deposited amorphous samples display a very strong negative temperature coefficient of resistivity, characteristic of highly disordered metallic glasses; in these samples the Hall effect could not be measured. The samples corresponding to the resistivity maximum (after respective anneals at 550 and 600 degrees C), known to be already crystallised with a high density of stacking faults, also show a negative temperature coefficient; the Hall constant remains dominated by hole transport over the whole range of temperatures investigated. At room temperature the temperature contribution to the resistivity is 11 mu Omega cm for WSi2 and 19 mu Omega cm for MoSi2.

U2 - 10.1088/0305-4608/17/9/020

DO - 10.1088/0305-4608/17/9/020

M3 - Article

VL - 17

SP - 1953

EP - 1961

JO - Journal of Physics F: Metal Physics

JF - Journal of Physics F: Metal Physics

SN - 0305-4608

IS - 9

ER -