Skip to main navigation
Skip to search
Skip to main content
VTT's Research Information Portal Home
Search content at VTT's Research Information Portal
Home
Profiles
Research output
Projects
Datasets
Research units
Research Infrastructures
Activities
Prizes
Press/Media
Impacts
Electronic transport properties of thin films of WSi2 and MoSi2
Christos Krontiras
, Ilkka Suni
, Francois d'Heurle
, Francoise LeGoues
, R. Joshi
VTT Technical Research Centre of Finland
Research output
:
Contribution to journal
›
Article
›
Scientific
26
Link opens in a new tab
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Electronic transport properties of thin films of WSi2 and MoSi2'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Annealing
100%
Resistivity
100%
Thin Film Properties
100%
WSi2
100%
Electronic Transport Properties
100%
MoSi2
100%
Hall Effect
66%
Negative Temperature Coefficient
66%
High Density
33%
Room Temperature
33%
Transport Properties
33%
As-deposited
33%
Hole Transport
33%
Stacking Faults
33%
Hall Constant
33%
Hall Coefficient
33%
Temperature Coefficient of Resistivity
33%
Metallic Glass
33%
Room Temperature Resistivity
33%
Resistivity Characteristics
33%
Disilicide
33%
INIS
transport
100%
thin films
100%
molybdenum silicides
100%
annealing
66%
holes
66%
temperature range 0273-0400 k
66%
temperature coefficient
66%
hall effect
66%
density
33%
range
33%
films
33%
metallic glasses
33%
stacking faults
33%
Physics
Transport Property
100%
Thin Films
100%
Photoelectric Emission
100%
Room Temperature
66%
Metallic Glass
33%
Crystal Defect
33%
Material Science
Electrical Resistivity
100%
Thin Films
100%
Amorphous Metal
20%
Annealing
20%
Film
20%
Density
20%
Crystal Defect
20%
Engineering
Temperature Coefficient
100%
Thin Films
100%
Room Temperature
100%