Electrons and holes in Si quantum well: A room-temperature transport and drag resistance study

Mika Prunnila (Corresponding Author), Sampo Laakso, Jani Kivioja, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    10 Citations (Scopus)

    Abstract

    We investigate carrier transport in a single 22-nm-thick double-gate Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume inversion/accumulation. At strongly asymmetric double-gate voltage an electric field induced electron-hole (EH) bilayer is formed inside the well. The EH drag resistance Rhe is explored at balanced carrier densities: Rhe decreases monotonically from 860 to 37 Ω when the electron and hole densities are varied between ∼0.4×1016 and 1.7×1016 m−2.
    Original languageEnglish
    Article number112113
    Number of pages3
    JournalApplied Physics Letters
    Volume93
    Issue number11
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    drag
    quantum wells
    room temperature
    electrons
    electric potential
    asymmetry
    inversions
    electric fields

    Cite this

    @article{eca43cb2322d43299f15cbb9e1d11284,
    title = "Electrons and holes in Si quantum well: A room-temperature transport and drag resistance study",
    abstract = "We investigate carrier transport in a single 22-nm-thick double-gate Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume inversion/accumulation. At strongly asymmetric double-gate voltage an electric field induced electron-hole (EH) bilayer is formed inside the well. The EH drag resistance Rhe is explored at balanced carrier densities: Rhe decreases monotonically from 860 to 37 Ω when the electron and hole densities are varied between ∼0.4×1016 and 1.7×1016 m−2.",
    author = "Mika Prunnila and Sampo Laakso and Jani Kivioja and Jouni Ahopelto",
    year = "2008",
    doi = "10.1063/1.2981802",
    language = "English",
    volume = "93",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    number = "11",

    }

    Electrons and holes in Si quantum well : A room-temperature transport and drag resistance study. / Prunnila, Mika (Corresponding Author); Laakso, Sampo; Kivioja, Jani; Ahopelto, Jouni.

    In: Applied Physics Letters, Vol. 93, No. 11, 112113, 2008.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Electrons and holes in Si quantum well

    T2 - A room-temperature transport and drag resistance study

    AU - Prunnila, Mika

    AU - Laakso, Sampo

    AU - Kivioja, Jani

    AU - Ahopelto, Jouni

    PY - 2008

    Y1 - 2008

    N2 - We investigate carrier transport in a single 22-nm-thick double-gate Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume inversion/accumulation. At strongly asymmetric double-gate voltage an electric field induced electron-hole (EH) bilayer is formed inside the well. The EH drag resistance Rhe is explored at balanced carrier densities: Rhe decreases monotonically from 860 to 37 Ω when the electron and hole densities are varied between ∼0.4×1016 and 1.7×1016 m−2.

    AB - We investigate carrier transport in a single 22-nm-thick double-gate Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume inversion/accumulation. At strongly asymmetric double-gate voltage an electric field induced electron-hole (EH) bilayer is formed inside the well. The EH drag resistance Rhe is explored at balanced carrier densities: Rhe decreases monotonically from 860 to 37 Ω when the electron and hole densities are varied between ∼0.4×1016 and 1.7×1016 m−2.

    U2 - 10.1063/1.2981802

    DO - 10.1063/1.2981802

    M3 - Article

    VL - 93

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 11

    M1 - 112113

    ER -