Electrons and holes in Si quantum well

A room-temperature transport and drag resistance study

Mika Prunnila (Corresponding Author), Sampo Laakso, Jani Kivioja, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

We investigate carrier transport in a single 22-nm-thick double-gate Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume inversion/accumulation. At strongly asymmetric double-gate voltage an electric field induced electron-hole (EH) bilayer is formed inside the well. The EH drag resistance Rhe is explored at balanced carrier densities: Rhe decreases monotonically from 860 to 37 Ω when the electron and hole densities are varied between ∼0.4×1016 and 1.7×1016 m−2.
Original languageEnglish
Article number112113
Number of pages3
JournalApplied Physics Letters
Volume93
Issue number11
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

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drag
quantum wells
room temperature
electrons
electric potential
asymmetry
inversions
electric fields

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@article{eca43cb2322d43299f15cbb9e1d11284,
title = "Electrons and holes in Si quantum well: A room-temperature transport and drag resistance study",
abstract = "We investigate carrier transport in a single 22-nm-thick double-gate Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume inversion/accumulation. At strongly asymmetric double-gate voltage an electric field induced electron-hole (EH) bilayer is formed inside the well. The EH drag resistance Rhe is explored at balanced carrier densities: Rhe decreases monotonically from 860 to 37 Ω when the electron and hole densities are varied between ∼0.4×1016 and 1.7×1016 m−2.",
author = "Mika Prunnila and Sampo Laakso and Jani Kivioja and Jouni Ahopelto",
year = "2008",
doi = "10.1063/1.2981802",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "11",

}

Electrons and holes in Si quantum well : A room-temperature transport and drag resistance study. / Prunnila, Mika (Corresponding Author); Laakso, Sampo; Kivioja, Jani; Ahopelto, Jouni.

In: Applied Physics Letters, Vol. 93, No. 11, 112113, 2008.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Electrons and holes in Si quantum well

T2 - A room-temperature transport and drag resistance study

AU - Prunnila, Mika

AU - Laakso, Sampo

AU - Kivioja, Jani

AU - Ahopelto, Jouni

PY - 2008

Y1 - 2008

N2 - We investigate carrier transport in a single 22-nm-thick double-gate Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume inversion/accumulation. At strongly asymmetric double-gate voltage an electric field induced electron-hole (EH) bilayer is formed inside the well. The EH drag resistance Rhe is explored at balanced carrier densities: Rhe decreases monotonically from 860 to 37 Ω when the electron and hole densities are varied between ∼0.4×1016 and 1.7×1016 m−2.

AB - We investigate carrier transport in a single 22-nm-thick double-gate Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume inversion/accumulation. At strongly asymmetric double-gate voltage an electric field induced electron-hole (EH) bilayer is formed inside the well. The EH drag resistance Rhe is explored at balanced carrier densities: Rhe decreases monotonically from 860 to 37 Ω when the electron and hole densities are varied between ∼0.4×1016 and 1.7×1016 m−2.

U2 - 10.1063/1.2981802

DO - 10.1063/1.2981802

M3 - Article

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 112113

ER -